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  ? 2000 ixys all rights reserved 1 - 2 v rsm v rrm type v v 1200 1200 dsei 2x 61-12b symbol test conditions maximum ratings (per diode) i frms t vj = t vjm 100 a i favm ??  t c = 50  c; rectangular, d = 0.5 52 a i frm t p < 10  s; rep. rating, pulse width limited by t vjm 700 a i fsm t vj = 45  c; t = 10 ms (50 hz), sine 450 a t = 8.3 ms (60 hz), sine 500 a t vj = 150  c; t = 10 ms (50 hz), sine 400 a t = 8.3 ms (60 hz), sine 440 a i 2 t t vj = 45  c t = 10 ms (50 hz), sine 1000 a 2 s t = 8.3 ms (60 hz), sine 1050 a 2 s t vj = 150  c; t = 10 ms (50 hz), sine 800 a 2 s t = 8.3 ms (60 hz), sine 810 a 2 s t vj -40...+150  c t vjm 150  c t stg -40...+150  c p tot t c = 25  c 180 w v isol 50/60 hz, rms 2500 v~ i isol  1 ma m d mounting torque 1.5/13 nm/lb.in. terminal connection torque (m4) 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (per diode) typ. max. i r t vj = 25  cv r = v rrm 2.2 ma t vj = 25  cv r = 0.8 ? v rrm 0.5 ma t vj = 125  cv r = 0.8  v rrm 14 ma v f i f = 60 a; t vj = 150  c 2.15 v t vj =25  c 2.50 v v t0 for power-loss calculations only 1.65 v r t t vj = t vjm 8.3 m  r thjc 0.7 k/w r thck 0.05 k/w t rr i f = 1 a; -di/dt = 200 a/  s; v r = 30 v; t vj = 25  c40 60 ns i rm v r = 540 v; i f = 60 a; -di f /dt = 480 a/  s3236a l  0.05  h; t vj = 100  c dsei 2x 61 i favm = 2x 52 a v rrm = 1200 v t rr = 40 ns  i favm rating includes reverse blocking losses at t vjm , v r = 0.8 v rrm , duty cycle d = 0.5 data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions features  international standard package minibloc (isotop compatible)  isolation voltage 2500 v~  2 independent fred in 1 package  planar passivated chips  very short recovery time  extremely low switching losses  low i rm -values  soft recovery behaviour applications  antiparallel diode for high frequency switching devices  anti saturation diode  snubber diode  free wheeling diode in converters and motor control circuits  rectifiers in switch mode power supplies (smps)  inductive heating and melting  uninterruptible power supplies (ups)  ultrasonic cleaners and welders advantages  high reliability circuit operation  low voltage peaks for reduced protection circuits  low noise switching  low losses  operating at lower temperature or space saving by reduced cooling fast recovery epitaxial diode (fred) minibloc, sot-227 b e72873 009
? 2000 ixys all rights reserved 2 - 2 0 200 400 600 800 1000 0.0 0.2 0.4 0.6 0.8 1.0 10 100 1000 0 2 4 6 8 10 12 0 200 400 600 800 1000 0 20 40 60 80 0 200 400 600 800 1000 0 10 20 30 40 50 60 t vj =125 c di f /dt t fr v fr t fr ns 0 200 400 600 800 1000 1200 a/s v v fr v r =540v t vj =100 c -di f /dt s t rr typ. 0 40 80 120 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f q r i rm c t j t vj =100 c a max. typ. v r =540v i rm -di f /dt c q r typ. max. v r = 540v 01234 0 10 20 30 40 50 60 70 80 90 t vj =100 c v v f i f t vj =150 c t vj =100 c t vj = 25 c a i f =60a i f =120a i f =60a i f =30a i f =60a a/s i f =30a i f =60a i f =120a i f =60a i f =30a i f =60a i f =60a i f =120a a/s a/s -di f /dt max. dsei 2x 61, 1200 v fig. 7 transient thermal impedance junction to case. fig. 1 forward current fig. 2 recovery charge versus -di f /dt. fig. 3 peak reverse current versus versus voltage drop. -di f /dt. fig. 4 dynamic parameters versus fig. 5 recovery time versus -di f /dt. fig. 6 peak forward voltage junction temperature. versus di f /dt. dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 37.80 38.20 1.489 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 v 3.30 4.57 0.130 0.180 w 0.780 0.830 19.81 21.08 dimensions minibloc sot-227 b m4 screws (4x) supplied


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