symbol max fet1 max fet2 v ds 30 30 v gs 12 12 9.0 7.3 7.2 5.9 i dm 40 40 i ar 16 12 e ar 38 22 2.0 2.0 1.3 1.3 t j , t stg -55 to 150 -55 to 150 symbol typ max 48 62.5 74 90 r q jl 32 40 symbol typ max 48 62.5 74 90 r q jl 32 40 maximum junction-to-lead c steady-state c/w thermal characteristics fet2 parameter units maximum junction-to-ambient a t 10s r q ja c/w maximum junction-to-ambient a steady-state c/w avalanche current b a repetitive avalanche energy l=0.3mh b mj c maximum junction-to-ambient a steady-state a w units parameter power dissipation t a =25c p dsm t a =70c absolute maximum ratings t a =25c unless otherwise noted v v gate-source voltage drain-source voltage c/w thermal characteristics fet1 parameter units maximum junction-to-ambient a t 10s r q ja c/w c/w continuous drain current a t a =25c maximum junction-to-lead c steady-state junction and storage temperature range t a =70c i dsm pulsed drain current b AO4924 asymmetric dual n-channel mosfet fet1 fet2 v ds (v) = 30v v ds (v) = 30v i d = 9a i d =7.3a (v gs = 10v) r ds(on) < 15.8m w <24m w (v gs = 10v) r ds(on) < 19.5m w <29m w (v gs = 4.5v) the AO4924 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in dc - dc converters. a monolithically integrated schottky diode in parallel with the synchronous mosfet to boost efficiency further. soic-8 g2 s2 g1 s1 d2 d2 d1 d1 2 4 5 1 3 8 6 7 top view srfet tm s oft r ecovery mos fet : integrated schottky diode g1 d1 s1 g2 d2 s2 www.freescale.net.cn 1/9 general description features
symbol min typ max units bv dss 30 v v ds =24v, v gs =0v 0.01 0.1 t j =125c 5 10 i gss 0.1 m a v gs(th) gate threshold voltage 1.5 1.85 2.4 v i d(on) 40 a 13 15.8 t j =125c 20.0 25.0 15.7 19.5 m w g fs 64 s v sd 0.4 0.6 v i s 4.5 a c iss 1450 1885 pf c oss 224 pf c rss 92 pf r g 1.6 3 w q g (10v) 24.0 31 q g (4.5v) 12.0 nc q gs 3.9 nc q gd 4.2 nc t d(on) 5.5 ns t r 4.7 ns t d(off) 24.0 ns t f 4.0 ns t rr 10 13 ns q rr 6.8 nc body diode reverse recovery time body diode reverse recovery charge i f =9a, di/dt=300a/ m s drain-source breakdown voltage on state drain current i d =1ma, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =9a reverse transfer capacitance i f =9a, di/dt=300a/ m s v ds =v gs i d =250 m a fet1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current ma v ds =0v, v gs = 12v gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage maximum body-diode + schottky continuous current input capacitance output capacitance dynamic parameters m w v gs =4.5v, i d =7a i s =1a,v gs =0v v ds =5v, i d =9a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.7 w , r gen =3 w turn-off fall time turn-on delaytime total gate charge v gs =10v, v ds =15v, i d =9a gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz a: the value of r ja is measured with the device in a still air enviro nment with t a =25c. the power dissipation p dsm and current rating i dsm are based on t (j(max) =150c, using t 10s junction-to-ambient thermal resistance. b: repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25c. the soa curve provides a single pulse rating. rev2: may 2011 www.freescale.net.cn 2/9 AO4924 asymmetric dual n-channel mosfet
fet1 typical electrical and thermal characteristics dynamic parameters 0 20 40 60 80 100 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) 10v 4v v gs =3v 6v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 8 11 14 17 20 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics is (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 30 60 90 120 150 180 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =9a v gs =10v v gs =4.5v 5 10 15 20 25 30 35 40 45 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125 v ds =5v v gs =4.5v v gs =10v i d =9a 25c 125c i d =7a 3.5v 4.5v www.freescale.net.cn 3/9 AO4924 asymmetric dual n-channel mosfet
fet1 typical electrical and thermal characteristics dynamic parameters 0 2 4 6 8 10 0 5 10 15 20 25 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m v ds =15v i d =9a 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) z q q q q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) t j(max) =175c t c =25c 1s www.freescale.net.cn 4/9 AO4924 asymmetric dual n-channel mosfet
fet1 typical electrical and thermal characteristics dynamic parameters 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 0 50 100 150 200 temperature (c) figure 12: diode reverse leakage current vs. junction temperature i r (a) vds=12v vds=24v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 50 100 150 200 temperature (c) figure 13: diode forward voltage vs. junction temperature v sd (v) 0 5 10 15 20 25 30 0 5 10 15 20 25 30 is (a) figure 14: diode reverse recovery charge and peak current vs. conduction current q rr (nc) 0 2 4 6 8 10 12 irm (a) di/dt=800a/us 0 2 4 6 8 10 12 0 5 10 15 20 25 30 is (a) figure 15: diode reverse recovery time and soft coefficient vs. conduction current trr (ns) 0 0.5 1 1.5 2 2.5 3 s i s =1a 10a 20a 0 5 10 15 20 25 0 200 400 600 800 1000 di/dt (a) figure 16: diode reverse recovery charge and peak current vs. di/dt q rr (nc) 0 2 4 6 8 10 irm (a) 0 3 6 9 12 15 0 200 400 600 800 1000 di/dt (a) figure 17: diode reverse recovery time and soft coefficient vs. di/dt trr (ns) 0 0.5 1 1.5 2 2.5 s di/dt=800a/us 125oc 125oc 125oc 125oc 125oc 125o 125oc 125oc 25oc 25oc 25oc 25oc 25oc 25oc 25oc 25oc is=20a is=20a qrr irm trr qrr irm trr s s 5a www.freescale.net.cn 5/9 AO4924 asymmetric dual n-channel mosfet
symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 0.7 1 1.5 v i d(on) 40 a 20 24 t j =125c 28 34 23.5 29 m w g fs 26 s v sd 0.71 1 v i s 4.5 a c iss 900 1100 pf c oss 88 pf c rss 65 pf r g 0.95 1.5 w q g 10 12 nc q gs 1.8 nc q gd 3.75 nc t d(on) 3.2 ns t r 3.5 ns t d(off) 21.5 ns t f 2.7 ns t rr 16.8 20 ns q rr 8 12 nc body diode reverse recovery time body diode reverse recovery charge i f =7.3a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =7.3a reverse transfer capacitance i f =7.3a, di/dt=100a/ m s fet2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions diode forward voltage v gs =0v, v ds =15v, f=1mhz dynamic parameters m a gate threshold voltage v ds =v gs i d =250 m a v ds =24v, v gs =0v v ds =0v, v gs = 12v zero gate voltage drain current i dss r ds(on) static drain-source on-resistance forward transconductance gate-body leakage current turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =2 w , r gen =6 w turn-off fall time turn-on delaytime v gs =4.5v, v ds =15v, i d =7.3a gate source charge gate drain charge switching parameters total gate charge gate resistance v gs =0v, v ds =0v, f=1mhz m w v gs =4.5v, i d =6a i s =1a,v gs =0v v ds =5v, i d =7.3a maximum body-diode continuous current input capacitance output capacitance a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user 's specific board design. the current rating is bas ed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev2: may 2011 www.freescale.net.cn 6/9 AO4924 asymmetric dual n-channel mosfet
fet2 typical electrical and thermal characteristics this product has been designed and qualified for th e consumer market. applications or uses as critical out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 10 20 30 40 50 60 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 2.5v 3v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 15 20 25 30 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.6 0.9 1.2 1.5 1.8 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =7.3a i d =6a v gs =4.5v 10 15 20 25 30 35 40 45 50 55 60 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =7.3a 25c 125c www.freescale.net.cn 7/9 AO4924 asymmetric dual n-channel mosfet
fet2 typical electrical and thermal characteristics this product has been designed and qualified for th e consumer market. applications or uses as critical out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 1 2 3 4 5 0 2 4 6 8 10 12 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q q q q ja normalized transient thermal resistance c oss c rss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 1ms 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =7.3a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 100 m s www.freescale.net.cn 8/9 AO4924 asymmetric dual n-channel mosfet
c oss c rss v ds =15v i d =7.3a in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 100 m s - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar www.freescale.net.cn 9/9 AO4924 asymmetric dual n-channel mosfet
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