amplifier, power, 2.0 w 6.5?9.5 ghz m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. MAAPGM0064 903261 ? preliminary information 1 parameter symbol absolute maximum units input power p in 23.0 dbm drain supply voltage v dd +12.0 v gate supply voltage v gg -3.0 v quiescent drain current (no rf, 40% idss) i dq 950 ma quiescent dc power dissipated (no rf) p diss 7.9 w junction temperature t j 180 c storage temperature t stg -55 to +150 c maximum operating conditions 1 1. operation outside of these ranges may reduce product reliability. features ? 2 watt saturated output power level ? variable drain voltage (4-10v) operation ? msag? process ? high performance ceramic bolt down package primary applications ? multiple band point-to-point radio ? satcom ? ism band description the MAAPGM0064 is a 2-stage 2 w power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. this product is fully matched to 50 ohms on both the input and output. it can be used as a power amplifier stage or as a driver stage in high power applications. each device is 100% rf tested to ensure performance compliance. the part is fabricated using m/a-com?s gaas multifunction self- aligned gate process. m/a-com?s msag? process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low-noise, switch and digital fets on a single chip. the use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. pin number rf designator 1 no connection 2 v gg 3 rf in 4 v gg 5 no connection 9 v dd 6 no connection 10 no connection 8 rf out 7 v dd apgm0064 ywwxxx
amplifier, power, 2.0 w 6.5?9.5 ghz m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. MAAPGM0064 903261 ? preliminary information 2 parameter symbol typical units bandwidth f 6.5-9.5 ghz output power pout 33 dbm power added efficiency pae 30 % 1-db compression point p1db 32 dbm small signal gain g 17 db input vswr vswr 1.8:1 output vswr vswr 3.0:1 gate supply current i gg < 5 ma drain supply current i dd < 1 ma noise figure nf 9.5 db 2 nd harmonic 2f -20 dbc 3 rd harmonic 3f -45 dbc 3 rd order intermodulation distortion, single carrier level = 20 dbm im3 -10 dbm 5 th order intermodulation distortion, single carrier level = 20 dbm im5 -25 dbm output third order intercept otoi 41 dbm electrical characteristics: t b = 40c 3 , z 0 = 50 , v dd = 8v, i dq 600 ma, p in = 18 dbm, r g 120 ? operating instructions this device is static sensitive. please handle with care. to operate the device, follow these steps. 1. apply v gg = -1.7 v, v dd = 0 v. 2. ramp v dd to desired voltage, typically 8 v. 3. adjust v gg to set i dq , (approxmately @ ?1.7v). 4. set rf input. characteristic symbol min typ max unit drain supply voltage v dd 4.0 8.0 10.0 v gate supply voltage v gg -2.4 -2.0 -1.3 v input power p in 18.0 21.0 dbm junction temperature t j 150 c package base temperature t b note 2 c thermal resistance jc 12.4 c/w recommended operat ing conditions 2. maximum package base temperature = 150c ? jc * v dd * i dq 3. adjust v gg between ?2.4 and ?1.3 v to achieve indicated i dq .
amplifier, power, 2.0 w 6.5?9.5 ghz m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. MAAPGM0064 903261 ? preliminary information 3 figure 2. 1db compression point vs. drain voltage 0 5 10 15 20 25 30 35 40 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 frequency (ghz) p1db (dbm) vdd = 4v vdd = 6v vdd = 8v vdd = 10v figure 3. output power vs. input power at v dd = 8v 0 5 10 15 20 25 30 35 40 -4 -2 0 2 4 6 8 10 12 14 16 18 20 pin (dbm) pout (dbm) 6.5 ghz 8.0 ghz 9.5 ghz figure 4. drain current vs. input power at v dd = 8v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -4-202468101214161820 pin (dbm) ids (a) 6.5 ghz 8.0 ghz 9.5 ghz figure 5. saturated output power and power added efficiency vs. drain voltage at f o = 8 ghz 0 10 20 30 40 50 4.0 5.0 6.0 7.0 8.0 9.0 10.0 drain voltage (v) pout (dbm) 0 5 10 15 20 25 30 35 40 45 pae (%) pout pae figure 6. small signal gain and vswr vs. frequency at vdd = 8v. 5 10 15 20 25 30 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 frequency (ghz) gain (db) 1 2 3 4 5 6 vswr gain (db) input vswr output vswr figure 1. output power and power added efficiency vs. frequency at v dd = 8v and p in = 18 dbm 0 10 20 30 40 50 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 frequency (ghz) pout (dbm) 0 10 20 30 40 50 pae (%) pout pae
amplifier, power, 2.0 w 6.5?9.5 ghz m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. MAAPGM0064 903261 ? preliminary information 4 figure 7. cr-15 package dimensions the cr-15 is a high frequency, low thermal resi stance package. the pa ckage consists of a cofired ceramic construction with a copper-tungs ten base and iron-nickel-cobalt leads. the finish consists of electrolytic gold over nickel plate.
amplifier, power, 2.0 w 6.5?9.5 ghz m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. MAAPGM0064 903261 ? preliminary information 5 figure 8. recommended bias configuration assembly instructions: this flange mount style package provides a robust interface between a highly inte grated gaas mmic device and a circuit board which may be assembled using conventional surface mount techniques. a thin shim made of a thermally and electrically conductive, ductile material shoul d be used prior to installation of the cr-15 to improve the thermal and electrical performanc e of the package to housing interface. refer to m/a-com application note #m567* for more information . for applications where surface mount components are to be in stalled after the cr-15 installation, this package will not be damaged when subjected to typical convection or ir oven reflow profiles. refer to m/a-com application note #m538* for maximum allowable reflow time and temperature. alternativel y, the package leads may be individually soldered. whether an iron or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric sta tic discharge (esd) safe. * application notes can be found by going to the site search page on m/a-com?s web page (http://www.macom.com/search/search.jsp) and se arching for the required application note. biasing notes: ? the 100pf bypass capacitors must be placed as close to the v gg and v dd pins as possible (recommended < 100 mils). ? a negative bias must be applied to v gg before applying a positive bias to v dd to prevent damage to the amplifier. rf out rf in 0.1 f v gg 0.1 f v dd 100 pf 100 pf 100 pf 100 pf pin number rf designator 1 no connection 2 v gg 3 rf in 4 v gg 5 no connection 9 v dd 6 no connection 10 no connection 8 rf out 7 v dd apgm0064 ywwxxx
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