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this is information on a product in full production. september 2012 doc id 17413 rev 6 1/19 19 STD8NM50N, stp8nm50n, stu8nm50n n-channel 500 v, 0.73 typ., 5 a mdmesh?ii power mosfet in dpak, to-220 and ipak packages datasheet ? production data features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description these devices are n-channel power mosfets developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order codes v dss @t jmax r ds(on) max. i d STD8NM50N stp8nm50n stu8nm50n 550 v < 0.79 5 a dpak 1 3 tab 1 2 3 tab to-220 ipak 3 2 1 tab !-v $4!" ' 3 table 1. device summary order codes marking packages packaging STD8NM50N 8nm50n dpak tape and reel stp8nm50n to-220 tu b e stu8nm50n ipak www.st.com
contents STD8NM50N, stp8nm50n, stu8nm50n 2/19 doc id 17413 rev 6 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STD8NM50N, stp8nm50n, stu8nm50n electrical ratings doc id 17413 rev 6 3/19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 500 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 5 a i d drain current (continuous) at t c = 100 c 3 a p tot total dissipation at t c = 25 c 45 w dv/dt (1) 1. i sd 7 a, di/dt 400 a/s, v peak < v (br)dss , v ds = 80% v (br)dss peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit dpak ipak to-220 r thj-case thermal resistance junction-case max 2.78 c/w r thj-amb thermal resistance junction-ambient max 100 62.5 c/w r thj-pcb thermal resistance junction-pcb max 50 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 2a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50 v) 140 mj
electrical characteristics STD8NM50N, stp8nm50n, stu8nm50n 4/19 doc id 17413 rev 6 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 500 v i dss zero gate voltage drain current (v gs = 0) v ds = 500 v v ds = 500 v, t c = 125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 2.5 a 0.73 0.79 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 364 33 1.2 - pf pf pf c oss(eq) (1) 1. coss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance time related v ds = 0 to 50 v, v gs = 0 - 147.5 - pf r g intrinsic gate resistance f = 1 mhz open drain - 5.4 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 5 a, v gs = 10 v (see figure 16 ) - 14 3 7 - nc nc nc
STD8NM50N, stp8nm50n, stu8nm50n electrical characteristics doc id 17413 rev 6 5/19 table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 250 v, i d = 5 a, r g = 4.7 , v gs = 10 v (see figure 15 ) - 7 4.4 25 8.8 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 5 20 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 5 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100 a/s v dd = 60 v (see figure 20 ) - 187 1.3 14 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 20 ) - 224 1.5 13 ns c a
electrical characteristics STD8NM50N, stp8nm50n, stu8nm50n 6/19 doc id 17413 rev 6 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak and ipak figure 3. thermal impedance for dpak and ipak figure 4. safe operating area for to-220 figure 5. thermal impedancefor to-220 figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am07915v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am07916v1 5v 6v 7v v g s =10v i d 6 4 2 0 0 10 v d s (v) 20 (a) 3 0 8 10 am07917v1 i d 6 4 2 0 0 4 v g s (v) 8 (a) 2 6 8 10 v d s = 20 v am0791 8 v1
STD8NM50N, stp8nm50n, stu8nm50n electrical characteristics doc id 17413 rev 6 7/19 figure 8. static drain-source on resistance figure 9. gate charge vs gate-source voltage figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature r d s (on) 0.72 0.71 0.7 0.69 0 2 i d (a) ( ) 1 3 0.7 3 0.74 0.75 v g s =10v 45 0.76 0.77 am07919v1 6 4 2 0 0 5 q g (nc) 8 10 15 10 v dd =400 v i d =5 a 12 150 100 50 0 200 250 v d s 3 00 3 50 400 v g s (v) am0 3 195v1 c 1000 100 10 1 0 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am07921v1 e 2 1 0 0 200 v d s (v) ( j) 100 3 00 400 500 am07922v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 75 25 50 100 i d = 250 a am0792 3 v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 2.1 i d = 2.5 a am07924v1
electrical characteristics STD8NM50N, stp8nm50n, stu8nm50n 8/19 doc id 17413 rev 6 figure 14. normalized v ds vs temperature v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1
STD8NM50N, stp8nm50n, stu8nm50n test circuits doc id 17413 rev 6 9/19 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STD8NM50N, stp8nm50n, stu8nm50n 10/19 doc id 17413 rev 6 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
STD8NM50N, stp8nm50n, stu8nm50n package mechanical data doc id 17413 rev 6 11/19 figure 21. dpak (to-252) drawing figure 22. dpak footprint (a) a. all dimension are in millimeters 006 8 772_i 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
package mechanical data STD8NM50N, stp8nm50n, stu8nm50n 12/19 doc id 17413 rev 6 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
STD8NM50N, stp8nm50n, stu8nm50n package mechanical data doc id 17413 rev 6 13/19 figure 23. to-220 type a drawing 00159 88 _typea_rev_ s
package mechanical data STD8NM50N, stp8nm50n, stu8nm50n 14/19 doc id 17413 rev 6 table 11. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
STD8NM50N, stp8nm50n, stu8nm50n package mechanical data doc id 17413 rev 6 15/19 figure 24. ipak (to-251) drawing 006 8 771_j
packaging mechanical data STD8NM50N, stp8nm50n, stu8nm50n 16/19 doc id 17413 rev 6 5 packaging mechanical data table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
STD8NM50N, stp8nm50n, stu8nm50n packaging mechanical data doc id 17413 rev 6 17/19 figure 25. tape for dpak (to-252) figure 26. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us t a pe s lot in core for t a pe s t a rt g me asu red at h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t am0 88 51v1
revision history STD8NM50N, stp8nm50n, stu8nm50n 18/19 doc id 17413 rev 6 6 revision history table 13. document revision history date revision changes 20-apr-2010 1 first release. 03-sep-2010 2 document status promoted from preliminary data to datasheet. inserted section 2.1: electrical characteristics (curves) . corrected r ds(on) max value in : features . 03-feb-2011 3 modified: figure 4 . modified: note 1 . modified: ta bl e 5 . 21-oct-2011 4 updated v dss (@tjmax) in cover page. updated section 4: package mechanical data . minor text changes. 15-nov-2011 5 the part number stf8nm50n has been moved to a separate datasheet. 13-sep-2012 6 figure 2 and figure 4 have been modified. section 4: package mechanical data has been updated.
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