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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. january 2013 doc id 023718 rev 2 1/13 13 STY145N65M5 n-channel 650 v, 0.012 typ., 138 a, mdmesh? v power mosfet in max247 package datasheet ? preliminary data features max247 worldwide best r ds(on) higher v dss rating higher dv/dt capability excellent switching performance easy to drive 100% avalanche tested applications switching applications description the device is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order code v dss @t jmax r ds(on) max i d STY145N65M5 710 v < 0.015 138 a 1 2 3 max247 !-v $ ' 3 table 1. device summary order code marking package packaging STY145N65M5 145n65m5 max247 tube www.st.com
contents STY145N65M5 2/13 doc id 023718 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STY145N65M5 electrical ratings doc id 023718 rev 2 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 138 a i d drain current (continuous) at t c = 100 c 87 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 552 a p tot total dissipation at t c = 25 c 625 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 17 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) 2420 mj dv/dt (2) 2. i sd 138 a, di/dt = 400 a/s, v dd = 400 v, peak v ds < v (br)dss. peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.2 c/w r thj-amb thermal resistance junction-ambient max 30 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics STY145N65M5 4/13 doc id 023718 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 69 a 0.012 0.015 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 18500 413 11 - pf pf pf c o(tr) (1) 1. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance time related v gs = 0, v ds = 0 to 520 v - 1950 - pf c o(er) (2) 2. c o(er) is a constant capacitanc e value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance energy related v gs = 0, v ds = 0 to 520 v - 415 - pf r g intrinsic gate resistance f = 1 mhz open drain - 0.7 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 69 a, v gs = 10 v (see figure 15 ) - 414 114 164 - nc nc nc
STY145N65M5 electrical characteristics doc id 023718 rev 2 5/13 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(v) t r(v) t f(i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 85 a, r g = 4.7 , v gs = 10 v (see figure 16 ) (see figure 19 ) - 255 11 82 88 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 138 552 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 138 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 138 a, di/dt = 100 a/s v dd = 100 v (see figure 16 ) - 568 14.5 51 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 138 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 16 ) - 728 24.5 67 ns c a
electrical characteristics STY145N65M5 6/13 doc id 023718 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ms 4j?# 4c?# 3inlge pulse ?s ms !-v 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 zth=k rthj-c =tp/ tp am09125v1 figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance ) $ 6 $3 6 ! 6 6 6 '3 6 !-v ) $ 6 '3 6 ! 6 $3 6 !-v 6 '3 1 g n# 6 6 $$ 6 ) $ ! 6 $3 6 6 $3 !-v 2 $3on ) $ ! m/hm 6 '3 6 !-v
STY145N65M5 electrical characteristics doc id 023718 rev 2 7/13 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized b vdss vs temperature figure 13. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode. # 6 $3 6 p& #iss #oss #rss !-v % oss 6 $3 6 ?* !-v v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a v d s = v g s am0 88 99v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 2.1 i d = 69a v g s = 10v am0 8 900v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 e 0 0 20 r g ( ) ( j) 10 3 0 1000 2000 40 i d = 8 5 a v dd =400 v eon eoff 3 000 v g s =10 v 4000 5000 6000 7000 8 000 9000 am15555v1
test circuits STY145N65M5 8/13 doc id 023718 rev 2 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d !-v )d 6gs 6ds 6ds )d 6gs on 4delay off 4fall 4r i s e 4cros s over 6ds )d 6gs)t on off 4fall 4r i s e #onceptwaveformfor)nductive,oad4urn off
STY145N65M5 package mechanical data doc id 023718 rev 2 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STY145N65M5 10/13 doc id 023718 rev 2 table 8. max247 mechanical data dim. mm min. typ. max. a4.70 5.30 a1 2.20 2.60 b1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c0.40 0.80 d 19.70 20.30 e5.35 5.55 e 15.30 15.90 l 14.20 15.20 l1 3.70 4.30
STY145N65M5 package mechanical data doc id 023718 rev 2 11/13 figure 20. max247 drawing 0094 33 0_rev_d
revision history STY145N65M5 12/13 doc id 023718 rev 2 5 revision history table 9. document revision history date revision changes 25-sep-2012 1 first release. 17-jan-2013 2 ? modified: i ar and e as values ? modified: typical values on ta b l e 5 , 6 and 7
STY145N65M5 doc id 023718 rev 2 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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