first release copyright ? ixys corporation 2003 general description evdd430s / evdd430cy the evdd430s / evdd430cy evaluation boards are general-purpose circuit boards designed to simplify the evaluation of the ixys ixds430, ixdd430, ixdi430, and ixdn430 mosfet / igbt driver, as well as to provide a building block for power circuit development. any of three ic package types, soic-28, 5 lead to-220, and 5 lead to-263 are available on two different boards. the board layouts enable the use of mosfets or igbts in the to-247, to-264 or sot-227 packages and also allow the driven devices to be mounted to a heat sink. in doing so, the board assemblies can be used as a ground referenced, low side power switch for both single-ended and push-pull configurations. the board layout for all three driver packages allows the device tabs to be soldered or strapped to a ground plane for improved cooling in high-power, high frequency applications with large mosfet devices. the layouts have also been optimized for minimal trace routing and maximized area to reduce inductance and enhance performance. figures 1and 2 are photographs of the front and back of the evdd430cy board loaded with an ixdi430ci to-220 driver while figures 3 and 4 show the evdd430s board equipped with the ixds430s 28 pin soic package. the low level inputs are shown at various points on the boards. the 'signal in' is a ttl or cmos level compatible input which controls the on or off state of the power device q1or q2. 'disable' is a optional input, depending on which device is installed, and controls the tri-state output (ixdd430, and ixds430 devices only). the tri-state mode could be used in a motor drive circuit in which an over current could be detected and then a disabling signal fed back, to control the turn off of an igbt at a slower rate through a seperate 'bleed off' resistor. the 'vcc-in' is the low voltage (8.5-35v) supply input. figures 5 and 6 illustrate the mounting of a to-247, to-264, sot-227 power devices. 30a ultra fast mosfet / igbt driver evaluation boards the drive output is attached to the mosfet / igbt via the gate drive resistor positions. the resistors can be replaced with values to optimize the turn on, turn off performance of the design. the ixds430s also includes seperate drive output source / sink pins and the evdd430s evaluation board is arranged such that the turn on rate can be different from the turn off rate via the seperated output pins of the device. the ixd_430 c and y output pins are internally connected and have just one set of gate resistors. finally, the devices are available with an undervoltage trip point of 8.5v or 11.75v, see order table. if the supply voltage dips below this fixed point, drive to the power device is disabled. this feature is selectable on the evdd430s pcb by way of jp2 while jp1 provides the option to invert the drive signal. circuit operation the schematic diagrams for the evaluation boards are shown in figures 8 and 9. the external drive signal is applied to 'signal in' test point. the pcbs also provide solder pads across the 50 ohm input resistor r4 so that a coax can be soldered directly to the board.the pcbs have been designed in an attempt to minimize parasitic inductance associated with long and narrow traces. large attachment points have been provided so that the user can connect larger wire or copper strap to minimize loop inductance. the diode, resistor combination of da and ra provides a controlled rate discharge path for the gate of the power device when the enable function forces the driver into its tri-state mode. in this mode, the turn-off time of the power device is determined by the time constant of the input gate capacitance c iss and the value of the resistor ra. ra has not been loaded so that the user may choose the value which best suits the design. ordering information part number companion device (1) options EVDD430CI ixdd430ci to-220 uv = 11.75 ni with enable evdd430mci ixdd430mci to-220 uv = 8.5 ni with enable evdd430yi ixdd430yi to-263 uv = 11.75 ni with enable evdd430myi ixdd430myi to-263 uv = 8.5 ni with enable evdi430ci ixdi430ci to-220 uv = 11.75 inverting evdi430mci ixdi430mci to-220 uv = 8.5 inverting evdi430yi ixdi430yi to-263 uv = 11.75 inverting evdi430myi ixdi430myi to-263 uv = 8.5 inverting evdn430ci ixdn430ci to-220 uv = 11.75 ni evdn430mci ixdn430mci to-220 uv = 8.5 ni evdn430yi ixdn430yi to-263 uv = 11.75 ni evdn430myi ixdn430myi to-263 uv = 8.5 ni evds430si ixds430si 28 pin soic uv / invert = selectable w/ enable uv = under voltage trip point, ni = non inverting (1) companion device to be mounted by user.
2 evdd430s/evdd430cy figure 1 evdd430cy evaluation board with 5 lead to-220 driver installed. figure 2 evdd430cy evaluation board, back side. figure 5 evaluation board side view showing a power device installed in a high power configuration. figure 6 evaluation board side view showing a sot-227 power device installed in a high power configuration. figure 3 evdd430s evaluation board. figure 4 evdd430s evaluation board, back side. to-247, to-264 clearance hole in pcb heat sink insulator device leads heat sink sot-227 pcb
3 evdd430s/evdd430cy the evaluation boards are supplied with either ixdd408yi, ixdd409yi, ixdi409yi, ixdn409yi or ixdd414yi 5-pin to- 263 devices installed, depending upon the evaluation board part number ordered. to use the evaluation board with a different package type, the installed device must be re- moved, and the new device installed in the appropriate location. input function vcc in supply 8v-35v gnd ground signal in external drive signal disable high for device disable inv** output inversion uvsel** under voltage select ** available on the evdd430s board only figure 8 evdd430s schematic diagram figure 7 - pcb connection table figure 9 - evdd430cy schematic diagram note: the schematic shows two mosfet devices. however only one device can be installed at any time. r3 2k to-247 q1 1 2 3 r4 49.9 r5 3.32 + c1 10uf 35v c16 0.01uf 50v c18 0.01uf 50v c15 0.01uf 50v c17 0.01uf 50v c2 .1uf 100v r11 220 tp1 tp3 signal in tp4 disable tp2 gnd + c3 10uf 35v + c8 10uf 35v + c6 10uf 35v + c7 10uf 35v + c9 10uf 35v + c5 10uf 35v c14 0.47uf 50v + c10 10uf 35v c13 0.47uf 50v c12 0.47uf 50v + c4 10uf 35v c11 0.47uf 50v ixds430 u1 vcc 1 vcc 2 vcc 3 vcc 4 n/c 5 uvsel 6 n/c 7 in 8 en 9 inv 10 gnd 11 gnd 12 gnd 13 gnd 14 gnd 15 gnd 16 gnd 17 gnd 18 out n 19 out n 20 out n 21 out p 22 out p 23 out p 24 vcc 25 vcc 26 vcc 27 vcc 28 r6 10k jp1 jp2 q2 2 3 1,4 sot-227 tp5 jp2 open for uvsel at 12.5v, jumpered for 8.5v r1 100 r2 1k q3 2n7000 2 3 1 jp1 open for non-inverted output, jumpered for inverted r7 1 r8 1 r9 1 r10 1 drain vcc in da ra not loaded ra da not loaded r3 10k r7 240 to-247 q2 1 2 3 r4 49.9 c14 0.01uf 50v npo c16 0.01uf 50v npo c13 0.01uf 50v npo c15 0.01uf 50v npo q1 2n7000 2 3 1 r5 100 r6 1k tp1 vcc in tp3 signal in tp4 disable tp5 gnd r1 1 r2 1 + c1 10uf 35v + c6 10uf 35v + c4 10uf 35v + c5 10uf 35v + c7 10uf 35v + c3 10uf 35v c12 0.47uf 50v + c8 10uf 35v c11 0.47uf 50v c10 0.47uf 50v + c2 10uf 35v c9 0.47uf 50v q3 2 3 1,4 sot-227 tp2 p3 gnd p1 vcc p2 out p4 in p5 en u1 / u2 ci / yi package
4 evdd430s/evdd430cy ixys semiconductor gmbh edisonstrasse15 ; d-68623; lampertheim tel: +49-6206-503-0; fax: +49-6206-503627 e-mail: marcom@ixys.de ixys corporation 3540 bassett st; santa clara, ca 95054 tel: 408-982-0700; fax: 408-496-0670 e-mail: sales@ixys.net www.ixys.com directed energy, inc. an ixys company 2401 research blvd. ste. 108 ft. collins, co 80526 tel: 970-493-1901; fax: 970-493-1903 e-mail: deiinfo@directedenergy.com www.directedenergy.com
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