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hexfet power mosfet notes through are on page 9 features and benefits applications ? power stage for high frequency buck converters ? battery protection charge and discharge switches v ds 30 v v gs max 20 v r ds(on) max (@v gs = 10v) 14.9 (@v gs = 4.5v) 20.4 q g typ 6.7 nc i d (@t c(bottom) = 25c) 10 a m ? pqfn dual 3.3x3.3 mm
note form quantit y irfhm8363trpbf pqfn dual 3.3mm x 3.3mm ta p e and reel 4000 irfhm8363tr2pbf pqfn dual 3.3mm x 3.3mm ta p e and reel 400 orderable part number package type standard pack features benefits low thermal resistance to pcb (< 6.7c/w) enable better thermal dissipation low profile (<1.0mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existin g surface mount techniques easier manufacturin g rohs compliant containin g no lead, no bromide and no halo g en environmentally friendlier msl1, consumer qualification increased reliability

absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bot tom) = 25c continuous drain current, v gs @ 10v i d @ t c(bot tom) = 100c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bott om) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range 2.7 0.02 19 max. 11 18 116 20 30 8.6 29 10 v w a c -55 to + 150
IRFHM8363PBF
d s g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 6.7 r jc (top) junction-to-case ??? 72 c/w r ja junction-to-ambient ??? 47 r ja (<10s) junction-to-ambient ??? 32 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.022 ??? v/c r ds(on) static drain-to-source on-resistance ??? 12.2 14.9 ??? 16.3 20.4 v gs(th) gate threshold voltage 1.35 1.8 2.35 v ? v gs(th) gate threshold voltage coefficient ??? -6.3 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 20 ??? ??? s q g total gate charge ??? 15 ??? nc q g total gate charge ??? 6.7 ??? q gs1 pre-vth gate-to-source charge ??? 2.1 ??? q gs2 post-vth gate-to-source charge ??? 1.0 ??? q gd gate-to-drain charge ??? 2.0 ??? q godr gate charge overdrive ??? 1.6 ??? q sw switch charge (q gs2 + q gd ) ??? 3.0 ??? q oss output charge ??? 7.6 ??? nc r g gate resistance ??? 1.6 ??? ? t d(on) turn-on delay time ??? 14 ??? t r rise time ??? 94 ??? t d(off) turn-off delay time ??? 12 ??? t f fall time ??? 33 ??? c iss input capacitance ??? 1165 ??? c oss output capacitance ??? 260 ??? c rss reverse transfer capacitance ??? 100 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener gy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current ( bod y diode ) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 17 26 ns q rr reverse recovery charge ??? 24 36 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 25a a v gs = 4.5v, i d = 8.0a v gs = 4.5v v ds = 24v, v gs = 0v, t j = 125c m ? v ds = 24v, v gs = 0v v gs = 10v, v ds = 15v, i d = 10a typ. ??? r g =1.8 ? v ds = 10v, i d = 10a i d = 10a i d = 10a v gs = 0v v ds = 10v v ds = 24v, v gs = 0v v dd = 15v, v gs = 4.5v t j = 25c, i f = 10a, v dd = 15v di/dt = 280a/s t j = 25c, i s = 10a, v gs = 0v showing the integral reverse p-n junction diode. conditions max. 29 10 ? = 1.0mhz conditions v gs = 0v, i d = 250a reference to 25c, i d = 1.0ma v gs = 10v, i d = 10a ??? ??? 116 ??? ??? 10 mosfet symbol na ns a pf nc v ds = 15v ??? v gs = 20v v gs = -20v
IRFHM8363PBF
fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 5.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v 60s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60s pulse width tj = 150c vgs top 10v 7.0v 5.0v 4.5v 3.5v 3.0v 2.8v bottom 2.5v 1 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 10a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 02468101214161820 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 10a
IRFHM8363PBF
fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a i d = 250a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 30 i d , d r a i n c u r r e n t ( a ) limited by source bonding technology 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec dc limited by source bonding technology
IRFHM8363PBF
fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 0 5 10 15 20 v gs, gate -to -source voltage (v) 10 15 20 25 30 35 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 10a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.3a 4.7a bottom 10a
IRFHM8363PBF
fig 16. !"#$% for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period &
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IRFHM8363PBF
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IRFHM8363PBF
2 pqfn dual 3.3x3.3 tape and reel
IRFHM8363PBF
3 qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.58mh, r g = 50 ? , i as = 10a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf calculated continuous current based on maximum allowable junction temperature. current is limited to 10a by source bonding technology.

! !"!!# ! $$! %!! &''((( )'(%!* ' ms l 1 (per jede c j-s t d-020d ??? ) rohs compliant yes pqfn dual 3.3mm x 3.3mm qualification information ? moisture sensitivity level qualification level cons umer ?? (per jede c je s d47f ??? guidelines )

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