Part Number Hot Search : 
GSC9406 000AKCY SXXXBF 89LPC9 PDTC14 IR3839 BNP10SHG CNS020
Product Description
Full Text Search
 

To Download AOD3N50 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  AOD3N50/aou3n50 500v, 3a n-channel mosfet 600v@150 i d (atv gs =10v) 2.8a r ds(on) (atv gs =10v) <3 w symbol v ds theAOD3N50&aou3n50havebeenfabricatedusing anadvancedhighvoltagemosfetprocessthatis designedtodeliverhighlevelsofperformanceand robustnessinpopularacdcapplications. byprovidinglowr ds(on) ,c iss andc rss alongwith guaranteedavalanchecapabilitythesepartscanbe adoptedquicklyintonewandexistingofflinepower supply designs. v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drainsourcevoltage 500 g d s v ds v gs i dm i ar e ar e as peakdioderecoverydv/dt dv/dt t j ,t stg t l symbol r q ja r q cs r q jc maximumcasetosink a maximumjunctiontocase d,f c/w c/w 1.8 0.5 2.2 mj avalanchecurrent c 60 repetitiveavalancheenergy c derateabove25 o c 57 0.45 a 2 singlepulsedavalancheenergy h 120 mj v/ns 5 p d v drainsourcevoltage 500 junctionandstoragetemperaturerange 50to150 c powerdissipation b v 30 gatesourcevoltage t c =100c a i d t c =25c 2.8 1.8 9 pulseddraincurrent c continuousdrain current b maximumjunctiontoambient a,g t c =25c 55 maximum thermal characteristics units c/w 45 parameter typical w w/ o c maximumleadtemperatureforsoldering purpose,1/8"fromcasefor5seconds 300 c www.freescale.net.cn 1/6 general description features
symbol min typ max units 500 600 bv dss /?tj 0.54 v/ o c 1 10 i gss gatebodyleakagecurrent 100 n a v gs(th) gatethresholdvoltage 3.5 4.1 4.5 v r ds(on) 2.3 3 w g fs 2.8 s v sd 0.78 1 v i s maximumbodydiodecontinuouscurrent 3 a i sm 9 a c iss 221 276 331 pf c oss 25 31.4 38 pf c rss 2.1 2.6 4.1 pf r g 1.9 3.9 5.9 w q g 6.7 8.0 nc q gs 1.7 3.0 nc q gd 2.7 3.2 nc t d(on) 11 13.2 ns t r 19 23.0 ns t d(off) 20.5 24.6 ns staticdrainsourceonresistance v gs =10v,i d =1.5a reversetransfercapacitance v gs =0v,v ds =25v,f=1mhz switching parameters turnonrisetime turnoffdelaytime v gs =10v,v ds =250v,i d =3a, r g =25 w electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss m a v zerogatevoltagedraincurrent id=250a,vgs=0v v ds =0v,v gs =30v drainsourcebreakdownvoltage i d =250a,v gs =0v,t j =25c i d =250a,v gs =0v,t j =150c i dss zerogatevoltagedraincurrent v ds =500v,v gs =0v gatedraincharge v ds =5v,i d =250 m a v ds =400v,t j =125c i s =1a,v gs =0v v ds =40v,i d =1.5a forwardtransconductance dynamic parameters diodeforwardvoltage gateresistance v gs =0v,v ds =0v,f=1mhz totalgatecharge v gs =10v,v ds =400v,i d =3a gatesourcecharge maximumbodydiodepulsedcurrent inputcapacitance outputcapacitance turnondelaytime t d(off) 20.5 24.6 ns t f 15 18.0 ns t rr 134 161 ns q rr 0.89 1.1 m c i f =3a,di/dt=100a/ m s,v ds =100v turnoffdelaytime g turnofffalltime bodydiodereverserecoverycharge i f =3a,di/dt=100a/ m s,v ds =100v bodydiodereverserecoverytime a.thevalueofr q ja ismeasuredwiththedeviceinastillairenvironm entwitht a =25 c. b.thepowerdissipationp d isbasedont j(max) =150 cinato252package,usingjunctiontocasetherm alresistance,andismoreusefulin settingtheupperdissipationlimitforcaseswhere additionalheatsinkingisused. c.repetitiverating,pulsewidthlimitedbyjuncti ontemperaturet j(max) =150 c. d.ther q ja isthesumofthethermalimpedancefromjunctiont ocaser q jc andcasetoambient. e.thestaticcharacteristicsinfigures1to6are obtainedusing<300 m spulses,dutycycle0.5%max. f.thesecurvesarebasedonthejunctiontocaset hermalimpedancewhichismeasuredwiththedevice mountedtoalargeheatsink,assuminga maximumjunctiontemperatureoft j(max) =150 c. g.thesetestsareperformedwiththedevicemounted on1in 2 fr4boardwith2oz.copper,inastillairenviron mentwitht a =25 c. h.l=60mh,i as =2a,v dd =150v,r g =10 ? ,startingt j =25 c www.freescale.net.cn 2/6 AOD3N50/aou3n50 500v, 3a n-channel mosfet
typical electrical and thermal characteristics 0 1 2 3 4 5 6 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics 55 c v ds =40v 25 c 125 c 1.0 2.0 3.0 4.0 5.0 0 1 2 3 4 5 6 7 r ds(on) ( w w w w ) i d (a) figure 3: on - resistance vs. drain current and gate v gs =10v 0 0.5 1 1.5 2 2.5 3 100 50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =1.5a 40 1.0e04 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 1.0e+02 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c i d =30a 25 125 figure 3: on - resistance vs. drain current and gate voltage 0.8 0.9 1 1.1 1.2 100 50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 5: break down vs. junction temperature www.freescale.net.cn 3/6 AOD3N50/aou3n50 500v, 3a n-channel mosfet
typical electrical and thermal characteristics 0 3 6 9 12 15 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =400v i d =3a 1 10 100 1000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 200 400 600 800 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) t j(max) =150 c t a =25 c figure 9: maximum forward biased safe operating area (note f) case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) d=t on /t t j,pk =t a +p dm .z q jc .r q jc r q jc =2.2 c/w indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse singlepulse t on t p d www.freescale.net.cn 4/6 AOD3N50/aou3n50 500v, 3a n-channel mosfet
typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 12: power de-rating (note b) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note b) 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) t j(max) =150 c t a =25 c pulse width (s) figure 14: single pulse power rating junction-to-ca se (note g) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q jc normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note g) d=t on /t t j,pk =t a +p dm .z q jc .r q jc r q ja =55 c/w indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse singlepulse t on t p d www.freescale.net.cn 5/6 AOD3N50/aou3n50 500v, 3a n-channel mosfet
+ vdc ig vds dut + vdc vgs vgs 10v qg qgs qgd charge gatechargetestcircuit&waveform + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istiveswitchingtestcircuit&waveforms t t r d(on) t on t d(off) t f t off vdd vgs id + vdc l vgs vds bv i unclampedinductiveswitching(uis)testcircuit& waveforms vds ar dss 2 e=1/2li ar ar vdd vgs vgs rg dut vdc id vgs i ig vgs + vdc dut l vgs vds isd isd dioderecoverytes tcircuit&waveforms vds vds+ i f ar di/dt i rm rr vdd vdd q=idt t rr www.freescale.net.cn 6/6 AOD3N50/aou3n50 500v, 3a n-channel mosfet


▲Up To Search▲   

 
Price & Availability of AOD3N50

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X