AOT9N40 400v,8a n-channel mosfet general description product summary v ds i d (at v gs =10v) 8a r ds(on) (at v gs =10v) < 0.8 ? 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: AOT9N40l symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r cs r jc c/w 0.5 c maximum junction-to-ambient a ,d c/w 65 300 thermal characteristics mj repetitive avalanche energy c 5 power dissipation b v/ns p d 5 junction and storage temperature range derate above 25 o c t c =25c 3.2 t c =100c v parameter absolute maximum ratings t a =25c unless otherwise noted 500v@150 drain-source voltage AOT9N40 400 the AOT9N40 is fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs.these parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. units v 30 gate-source voltage 8 continuous drain current t c =25c i d a 22 pulsed drain current c maximum junction-to-case 132 1 avalanche current c 150 single pulsed avalanche energy g 300 parameter maximum case-to-sink a maximum lead temperature for soldering p ur p ose, 1/8" from case for 5 seconds c/w AOT9N40 units a c mj w w/ o c -55 to 150 0.95 g d s g d s top view to-220 rev 0: dec 2010 www.aosmd.com page 1 of 5
AOT9N40 symbol min typ max units 400 500 bv dss / ? tj 0.4 v/ o c 1 10 i gss gate-body leakage current 100 n v gs(th) gate threshold voltage 3.4 4 4.5 v r ds(on) 0.64 0.8 ? g fs 8s v sd 0.75 1 v i s maximum body-diode continuous current 8 a i sm 22 a c iss 500 630 760 pf c oss 45 73 100 pf c rss 2 5.7 9 pf r g 1.2 2.6 4.0 ? q g 10 13.1 16 nc q gs 3.9 nc q gd 4.8 nc t d(on) 17 ns t r 52 ns t d(off) 25 ns t f 30 ns t rr 150 195 240 ns q rr 1.5 1.9 2.3 c this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time static drain-source on-resistance v gs =10v, i d =4a reverse transfer capacitance i f =8a,di/dt=100a/ s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =4a forward transconductance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current v ds =400v, v gs =0v diode forward voltage v ds =5v i d =250 a v ds =320v, t j =125c turn-off delaytime v gs =10v, v ds =200v, i d =8a, r g =25 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =320v, i d =8a gate source charge gate drain charge bv dss body diode reverse recovery charge i f =8a,di/dt=100a/ s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time a v ds =0v, v gs =30v v drain-source breakdown voltage i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c zero gate voltage drain current id=250a, vgs=0v a. the value of r ja is measured with the device in a still air environment with t a =25c. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c, ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedance from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal imped ance which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. l=60mh, i as =3.2a, v dd =150v, r g =25 ? , starting t j =25c rev 0: dec 2010 www.aosmd.com page 2 of 5
AOT9N40 typical electrical and thermal characteristic s 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0 4 8 12 16 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 0246810 v gs (volts) figure 2: transfer characteristics i d (a) -55c v ds =40v 25c 125c 0.0 0.4 0.8 1.2 1.6 2.0 0 3 6 9 12 15 18 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( ? ) v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =4a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j (c) figure 5:break down vs. junction temparature bv dss (normalized) rev 0: dec 2010 www.aosmd.com page 3 of 5
AOT9N40 typical electrical and thermal characteristic s 0 3 6 9 12 15 048121620 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =320v i d =8a 1 10 100 1000 10000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 10: maximum forward biased safe operating area for AOT9N40 (note f) 10 t case (c) figure 9: current de-rating (note b) current rating i d (a) 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal impedance for AOT9N40 (note f) z jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =0.95c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev 0: dec 2010 www.aosmd.com page 4 of 5
AOT9N40 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd char ge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d( on) t on t d(of f ) t f t of f vdd vgs id vgs rg du t - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds is d is d diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev 0: dec 2010 www.aosmd.com page 5 of 5
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