symbol v ds v gs i dm t j , t stg symbol ty p max 31 40 59 75 r jl 16 24 w junction and storage temperature range a p d c 3 2.1 -55 to 150 t a =70c i d continuous drain current a maximum units parameter t a =25c t a =70c 30 maximum junction-to-ambient a steady-state 20 17 80 c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 pulsed drain current b power dissipation t a =25c gate-source voltage drain-source voltage maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w ao4444 n-channel enhancement mode field effect transistor features v ds (v) = 30v i d = 20a (v gs = 10v) r ds(on) < 5.5m ? (v gs = 10v) r ds(on) < 7.5m ? (v gs = 4.5v) general description the ao4444 uses advanced trench technology to provide excellent r ds(on) , body diode characteristics and ultra-low gate resistance. this device is ideally suited for use as a low side switch in 12v buck converters. standard product ao4444 is pb-free (meets rohs & sony 259 specifications). aO4444L is a green product ordering option. ao4444 and a O4444L are electrically identical. soic-8 g s s s d d d d g d s alpha & omega semiconductor, ltd.
ao4444 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 60 a 3.9 5.5 t j =125c 5.1 6.2 5.1 7.5 m ? g fs 106 s v sd 0.72 1 v i s 4a c iss 3200 3840 pf c oss 590 pf c rss 414 pf r g 0.54 0.7 ? q g (10v) 63 76 nc q g (4.5v) 33 40 nc q gs 8.6 nc q gd 17.6 nc t d(on) 12 ns t r 15.5 ns t d(off) 40 ns t f 14 ns t rr 34 41 ns q rr 30 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=100a/ s gate source charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge total gate charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =4.5v, v ds =15v, i d =20a turn-on delaytime turn-on rise time turn-off delaytime gate drain charge maximum body-diode continuous current input capacitance output capacitance dynamic parameters m ? v gs =4.5v, i d =15a i s =1a,v gs =0v v ds =5v, i d =20a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions turn-off fall time body diode reverse recovery time i f =20a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance v gs =10v, v ds =15v, r l =0.75 ? , r gen =3 ? a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 1 : june 2005 alpha & omega semiconductor, ltd.
ao4444 typical electrical and thermal characteristic s 0 10 20 30 40 50 60 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5 v 10v 4.0 v 0 10 20 30 40 50 60 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 2 3 4 5 6 7 8 0 102030405060 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 3 4.5 6 7.5 9 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c i d =20a alpha & omega semiconductor, ltd.
ao4444 typical electrical and thermal characteristic s 0 2 4 6 8 10 0 10203040506070 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) c oss c r ss v ds =15v i d =20a t j(max) =150c t a =25c 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1m s 0.1s 1 s 1 0s d c r ds(on) limited t j(max) =150c t a =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, sin g le pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w t on t p d single pulse 10 s alpha & omega semiconductor, ltd.
|
