aO4449 30v p-channel mosfet general description product summary v ds i d (at v gs =-10v) -7a r ds(on) (at v gs =-10v) < 34m w r ds(on) (at v gs = -4.5v) < 54m w 100% uis tested 100% r g tested symbol the aO4449 uses advanced trench technology to provi de excellent r d s(on) , and ultra-low low gate charge. this device is suitable for use as a load switch or in p wm applications. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -30v g d s soic-8 top view bottom view d d d d s s s g symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl 2 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics w 3.1 units parameter typ max c/w r q ja 31 59 40 maximum junction-to-ambient a v 20 gate-source voltage drain-source voltage -30 v maximum units parameter mj avalanche current c 26 a 23 a i d -7 -5.5 -40 t a =25c t a =70c power dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 g d s soic-8 top view bottom view d d d d s s s g rev 2: july 2010 www.aosmd.com page 1 of 6
aO4449 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 the aO4449 uses advanced trench technology to provi de excellent rds(on), and ultra-low low gate charge . this device is suitable for use as a load switch or in pwm applications. 100 na v gs(th) gate threshold voltage -1.3 -1.85 -2.4 v i d(on) -40 a 21 34 t j =125c 31.5 38 33 54 m w g fs 18 s v sd -0.8 -1 v i s -3.5 a c iss 600 760 910 pf c oss 100 140 180 pf c rss 60 95 135 pf r g 1.5 3.2 5 w q g (10v) 11 13.6 16 nc q g (4.5v) 5.4 6.7 8 nc q gs 2 2.5 3 nc q gd 1.9 3.2 4.5 nc t d(on) 8 ns t 6 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =-10v, v =-15v, total gate charge v gs =-10v, v ds =-15v, i d =-7a gate source charge gate drain charge total gate charge i s =-1a,v gs =0v v ds =-5v, i d =-7a v gs =-4.5v, i d =-5a forward transconductance diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz m a v ds =v gs i d =-250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current m w on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-7a r ds(on) static drain-source on-resistance i dss reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage t r 6 ns t d(off) 17 ns t f 5 ns t rr 12 15 18 ns q rr 7.7 9.7 11.6 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-7a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =2.15 w , r gen =3 w turn-off fall time i f =-7a, di/dt=100a/ m s body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25
aO4449 typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 4.5 5 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 35 40 45 50 0 5 10 15 20 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-5a v gs =-10v i d =-7a 25
aO4449 typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 12 14 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-7a 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150
aO4449 typical electrical and thermal characteristics the aO4449 uses advanced trench technology to provide excellent rds(on), and ultra-low low gate charge. this device is suitable for use as a l oad switch or in pwm applications. 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75
aO4449 aO4449 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 2: july 2010 www.aosmd.com page 6 of 6
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