isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1yd tel: (01429) 863609 fax :(01429) 863581 isocom inc 720 e., park boulevard, suite 104, plano, tx 75074 usa tel: (972) 423-5521 fax: (972) 422-4549 24/9/97 db92003-aas/a1 transmissive opto-electronic dual channel slotted interrupter switches with transistor sensors absolute maximum ratings (25c unless otherwise specified) storage temperature -40c to + 85c operating temperature -25c to + 85c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 50ma reverse voltage 5v power dissipation 75mw output transistor collector-emitter voltage bv ceo 30v emitter-collector voltage bv eco 5v collector current i c 20ma power dissipation 75mw iSTS150, ists832s, ists832sd ists250, ists822s, ists822sd 3.2 dia 2 plcs ists250 ists822s ists822sd 2.8 optical centre line 2.54 0.45 0.40 7.62 e description this series of photointerrupters are dual channel switches consisting of two gallium arsenide infrared emitting diodes and two npn silicon photo transistors mounted in a "side by side" configuration on opposite sides of a 2.5mm wide slot. dual channels enable direction of travel sensing. the transmissive housing reduces possible interference from ambient light and provides dust and dirt protection. in addition the ists822s, ists832s have 0.25mm apertures in front of the phototransistors, while the ists822sd, ists832sd have the same sized apertures in front of both emitters and phototransistors features l single or double apertures for high resolution l 2.5mm gap between led and detector l dual channels "side by side" applications l copiers, printers, facsimilies, record players, cassette decks, vcr's iSTS150 ists832s ists832sd optical centre line 1 dimensions in mm 10.4 10.0 11.4 2.54 7.9 7.4 7.62 2.54 2.8 2.8 11.5 e 2.8 0.45 0.40 11.4 7.9 7.4 17.8 11.5 5.4 10.4 10.0 2.54 24.2 1 2 3 4 8 7 6 5
db92003-aas/a1 parameter min typ max units test condition input forward voltage (v f ) 1.2 1.6 v i f = 20ma reverse voltage (v r )3vi r = 10 m a reverse current (i r )10 m av r = 3v output collector-emitter breakdown (bv ceo )30 v i c = 1ma ( note 1 ) emitter-collector breakdown (bv eco ) 5 v i e = 100 m a collector-emitter dark current (i ceo ) 100 na v ce = 10v coupled on-state collector current i c ( on ) ( note 1 ) iSTS150, ists250 250 m a 20ma i f , 10v v ce ( no apertures ) ists822s, ists832s 250 m a 20ma i f , 10v v ce (0.25mm apertures phototransistors only) ists822sd, ists832sd 100 m a 20ma i f , 10v v ce ( 0.25mm apertures in front of both - - emitters and phototransistors ) collector-emitter saturation voltagev ce(sat) iSTS150, ists250 0.4 v 20ma i f , 125 m a i c ists822s, ists832s 0.4 v 20ma i f , 125 m a i c ists822sd, ists832sd 0.4 v 20ma i f , 50 m a i c rise time tr 6 m sv cc = 5v, fall time tf 6 m si f = 20ma, r l = 100 w note 1 special selections are available on request. please consult the factory. 24/9/97 electrical characteristics ( t a = 25c unless otherwise noted )
db92003aas/a1 24/9/97 25 -25 0 25 50 75 100 125 ambient temperature t a ( c ) 75 0 100 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 0 40 50 -25 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature 50 forward current i f (ma) 0 0.5 1.0 1.5 i f = 20ma v ce = 10v ambient temperature t a ( c ) -25 0 25 50 75 100 -25 0 25 50 75 100 ambient temperature t a ( c ) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 0 0.04 0.08 0.12 0.16 0.20 0.24 0.28 i f = 20ma i c = 50 m a 1 2 5 10 20 50 0 0.4 0.6 0.8 1.0 1.2 0.2 1.4 normalized output current normalized output current vs. forward current forward current i f (ma) 0.1 1 10 100 1 10 normalized output current normalized output current vs. collector-emitter voltage collector-emitter voltage v ce ( v ) 0.1 0.01 t a = 25c 0.02 0.04 0.2 0.4 2 4 1.6 1.8 2.0 normalized to i f = 20ma v ce = 10v pulsed pw = 100 m s prr = 100pps i f = 50ma 30ma 20ma 5ma 10ma normalized output current vs. ambient temperature normalized output current normalized to i f = 20ma v ce = 0.4v pulsed pw = 100 m s prr = 100pps t a = 25c
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