tgl41-6.8 thru tgl41-200a vishay semiconductors formerly general semiconductor document number 88403 www.vishay.com 03-may-02 1 surface mount t rans z orb transient voltage suppressors breakdown voltage 6.8 to 200v peak pulse power 400w maximum ratings & thermal characteristics ratings at 25? ambient temperature unless otherwise specified. parameter symbol value unit peak pulse power dissipation with a p ppm minimum 400 w 10/1000 s waveform (1) (fig. 1) steady state power dissipation at t l = 75? (2) p m(av) 1.0 w peak pulse current with a 10/1000 s waveform (1) (fig. 3) i ppm see next table a peak forward surge current, 8.3 ms single half sine-wave i fsm 40 a unidirectional only (3) maximum instantaneous forward voltage at 25a for v f 3.5 v unidirectional only operating junction and storage temperature range t j , t stg 55 to +150 ? notes: (1) non-repetitive current pulse, per fig.3 and derated above t a = 25? per fig. 2. rating is 200w above 91v. (2) mounted on copper pads to each terminal of 0.31 in 2 (8.0 mm 2 ) per fig. 5 (3) measured at 8.3ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum solderable ends 1st band 0.022 (0.56) 0.018 (0.46) 0.205 (5.2) 0.185(4.7) d1= 0.105 0.095 (2.67) (2.41) d2 = d1 + 0 - 0.008 (0.20) 1st band denotes type and positive end (cathode) d2 0.022 (0.56) 0.018 (0.46) dimensions in inches and (millimeters) do-213ab (gl41) features plastic package has underwriters laboratory flammability classificaion 94v-0 for surface mounted applications glass passivated junction excellent clamping capability low incremental surge resistance very fast response time 400w peak pulse capability with a 10/1000 s waveform, repetition rate (duty cycle): 0.01% (200w above 91v) for devices with v (br) 10v, i d are typically less than 1.0 a high temperature soldering guaranteed: 250 c/10 seconds at terminals available in unidirectional only mechanical data case: jedec do-213ab molded plastic body over passivated junction terminals: solder plated, solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250 c/10 seconds at terminals polarity: blue bands denotes the cathode which is positive with respect to the anode under normal tvs operation mounting position: any weight: 0.0046 oz., 0.166 g packaging codes/options: 26/5k per 13" reel (12mm tape), 60k/box 46/1.5k per 7" reel (12mm tape), 30k/box mounting pad layout 0.157 (4.00) 0.118 (3.00) min max 0.256 (6.50) ref 0.049 (1.25) min
tgl41-6.8 thru tgl41-200a vishay semiconductors formerly general semiconductor www.vishay.com document number 88403 2 03-may-02 electrical characteristics (t a = 25 c unless otherwise noted) breakdown voltage maximum reverse maximum maximum maximum v br (v) (1) test current stand-off voltage leakage at peak pulse clamping voltage temperature at i t v wm v wm i d ( a) current i ppm at i ppm coefficient device type min max (ma) (v) (a) (2) v c (v) of v br (% / ?) tgl41-6.8 6.12 7.48 10 5.50 1000 37.0 10.8 0.060 tgl41-6.8a 6.45 7.14 10 5.80 1000 38.1 10.5 0.060 tgl41-7.5 6.75 8.25 10 6.05 500 34.2 11.7 0.064 tgl41-7.5a 7.13 7.88 10 6.40 500 35.4 11.3 0.064 tgl41-8.2 7.38 9.02 10 6.63 200 32.0 12.5 0.068 tgl41-8.2a 7.79 8.61 10 7.02 200 33.1 12.1 0.068 tgl41-9.1 8.19 10.0 1.0 7.37 50.0 29.0 13.8 0.071 tgl41-9.1a 8.65 9.55 1.0 7.78 50.0 29.9 13.4 0.071 tgl41 -10 9.00 11.0 1.0 8.10 10.0 26.7 15.0 0.076 tgl41 -10a 9.50 10.5 1.0 8.55 10.0 27.6 14.5 0.076 tgl41 -11 9.90 12.1 1.0 8.92 5.0 24.7 16.2 0.078 tgl41 -11a 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.078 tgl41-12 10.8 13.2 1.0 9.72 5.0 23.1 17.3 0.081 tgl41-12a 11.4 12.6 1.0 10.2 5.0 24.0 16.7 0.081 tgl41-13 11.7 14.3 1.0 10.5 5.0 21.1 19.0 0.084 tgl41-13a 12.4 13.7 1.0 11.1 5.0 22.0 18.2 0.084 tgl41-15 13.5 16.5 1.0 12.1 5.0 18.2 22.0 0.087 tgl41-15a 14.3 15.8 1.0 12.8 5.0 18.9 21.2 0.087 tgl41-16 14.4 17.6 1.0 12.9 5.0 17.0 23.5 0.089 tgl41-16a 15.2 16.8 1.0 13.6 5.0 17.8 22.5 0.089 tgl41-18 16.2 19.8 1.0 14.5 5.0 15.1 26.5 0.091 tgl41-18a 17.1 18.9 1.0 15.3 5.0 15.9 25.2 0.091 tgl41-20 18.0 22.0 1.0 16.2 5.0 13.7 29.1 0.093 tgl41-20a 19.0 21.0 1.0 17.1 5.0 14.4 27.7 0.093 tgl41-22 19.8 24.2 1.0 17.8 5.0 12.5 31.9 0.095 tgl41-22a 20.9 23.1 1.0 18.8 5.0 13.1 30.6 0.095 tgl41-24 21.6 26.4 1.0 19.4 5.0 11.5 34.7 0.097 tgl41-24a 22.8 25.2 1.0 20.5 5.0 12.0 33.2 0.097 tgl41-27 24.3 29.7 1.0 21.8 5.0 10.2 39.1 0.099 tgl41-27a 25.7 28.4 1.0 23.1 5.0 10.7 37.5 0.099 tgl41-30 27.0 33.0 1.0 24.3 5.0 9.2 43.5 0.100 tgl41-30a 28.5 31.5 1.0 25.6 5.0 9.7 41.4 0.100 tgl41-33 29.7 36.3 1.0 26.8 5.0 8.4 47.7 0.101 tgl41-33a 31.4 34.7 1.0 28.2 5.0 8.8 45.7 0.101 tgl41-36 32.4 39.6 1.0 29.1 5.0 7.7 52.0 0.102 tgl41-36a 34.2 37.8 1.0 30.8 5.0 8.0 49.9 0.102 tgl41-39 35.1 42.9 1.0 31.6 5.0 7.1 56.4 0.103 tgl41-39a 37.1 41.0 1.0 33.3 5.0 7.4 53.9 0.103 tgl41-43 38.7 47.3 1.0 34.8 5.0 6.5 61.9 0.104 tgl41-43a 40.9 45.2 1.0 36.8 5.0 6.7 59.3 0.104
tgl41-6.8 thru tgl41-200a vishay semiconductors formerly general semiconductor document number 88403 www.vishay.com 03-may-02 3 electrical characteristics (t a = 25 c unless otherwise noted) breakdown voltage maximum reverse maximum maximum maximum v br (v) (1) test current stand-off voltage leakage at peak pulse clamping voltage temperature at i t v wm v wm i d ( a) current i ppm at i ppm coefficient device type min max (ma) (v) (a) (2) v c (v) of v br (% / ?) tgl41-47 42.3 51.7 1.0 38.1 5.0 5.9 67.8 0.104 tgl41-47a 44.7 49.4 1.0 40.2 5.0 6.2 64.8 0.104 tgl41-51 45.9 56.1 1.0 41.3 5.0 5.4 73.5 0.105 tgl41-51a 48.5 53.6 1.0 43.6 5.0 5.7 70.1 0.105 tgl41-56 50.4 61.6 1.0 45.4 5.0 5.0 80.5 0.106 tgl41-56a 53.2 58.8 1.0 47.8 5.0 5.2 77.0 0.106 tgl41-62 55.8 68.2 1.0 50.2 5.0 4.5 89.0 0.107 tgl41-62a 58.9 65.1 1.0 53.0 5.0 4.7 85.0 0.107 tgl41-68 61.2 74.8 1.0 55.1 5.0 4.1 98.0 0.107 tgl41-68a 64.6 71.4 1.0 58.1 5.0 4.3 92.0 0.107 tgl41-75 67.5 82.5 1.0 60.7 5.0 3.7 108 0.108 tgl41-75a 71.3 78.8 1.0 64.1 5.0 3.9 103 0.108 tgl41-82 73.8 90.2 1.0 66.4 5.0 3.4 118 0.108 tgl41-82a 77.9 86.1 1.0 70.1 5.0 3.5 113 0.108 TGL41-91 81.9 100.0 1.0 73.7 5.0 3.1 131 0.109 TGL41-91a 86.5 95.50 1.0 77.8 5.0 3.2 125 0.109 tgl41-100 90.0 110.0 1.0 81.0 5.0 1.39 144 0.109 tgl41-100a 95.0 105.0 1.0 85.5 5.0 1.46 137 0.109 tgl41-110 99.0 121.0 1.0 89.2 5.0 1.27 158 0.110 tgl41-110a 105.0 116.0 1.0 94.0 5.0 1.32 152 0.110 tgl41-120 108.0 132.0 1.0 97.2 5.0 1.16 173 0.110 tgl41-120a 114.0 126.0 1.0 102.0 5.0 1.21 165 0.110 tgl41-130 117.0 143.0 1.0 105.0 5.0 1.07 187 0.110 tgl41-130a 124.0 137.0 1.0 111.0 5.0 1.12 179 0.110 tgl41-150 135.0 165.0 1.0 121.0 5.0 0.93 215 0.111 tgl41-150a 143.0 158.0 1.0 128.0 5.0 0.97 207 0.111 tgl41-160 144.0 176.0 1.0 130.0 5.0 0.87 230 0.111 tgl41-160a 152.0 168.0 1.0 136.0 5.0 0.91 219 0.111 tgl41-170 153.0 187.0 1.0 138.0 5.0 0.82 244 0.111 tgl41-170a 162.0 179.0 1.0 145.0 5.0 0.85 234 0.111 tgl41-180 162.0 198.0 1.0 146.0 5.0 0.78 258 0.111 tgl41-180a 171.0 189.0 1.0 154.0 5.0 0.81 246 0.111 tgl41-200 180.0 220.0 1.0 162.0 5.0 0.70 287 0.111 tgl41-200a 190.0 210.0 1.0 171.0 5.0 0.73 274 0.111 notes: (1) v (br) measured after i t applied for 300 s square wave pulse or equivalent (2) surge current waveform per figure 3 and derate per fig.2 (3) all terms and symbols are consistent with ansi/ieee c62.35
tgl41-6.8 thru tgl41-200a vishay semiconductors formerly general semiconductor www.vishay.com document number 88403 4 03-may-02 ratings and characteristic curves (t a = 25 c unless otherwise noted) 0 25 50 75 100 125 150 0 25 50 100 75 1 10 100 0 20 40 10 30 50 0.1 1.0 10 100 1.0 s 10 s 100 s 1.0 m s 10 m s 0.1 s 1.0 10 100 200 10 100 1,000 10,000 0 50 100 150 200 0 0.25 0.50 0.75 1.00 25 75 125 175 non-repetitive pulse waveform shown in fig. 3 t a = 25 c tgl41-6.8 tgl91a tgl41-100 tgl200a td, pulse width, sec. t a , ambient temperature ( c) v (br) , breakdown voltage (v) number of cycles at 60 hz t l , lead temperature ( c) p ppm , peak pulse power (kw) peak pulse power (p ppm ) or current (i ppm ) derating in percentage (%) pm (av) , steady state power dissipation (w) cj, junction capacitance (pf) i fsm , peak forward surge current (a) fig. 1 - peak pulse power rating curve fig. 2 - pulse derating curve fig. 5 - steady state power derating curve fig. 6 - maximum non-repetitive peak forward surge current unidirectional only fig. 4 - typical junction capacitance t j = 25 c f = 1.0 mhz vsq = 50mvpp unidirectional measured at zero bias measured at stand-off voltage, v wm 0.31 x 0.31 x 0.08" copper pads (8 x 8 x 2mm) 60 hz resistive or inductive load 8.3ms single half sine-wave (jedec method) t j = t j max. 0 50 100 150 i ppm peak pulse current, % i rsm fig. 3 pulse waveform t j = 25 c pulse width (td) is defined as the point where the peak current decays to 50% of i ppm tr = 10 sec. peak value i ppm half value ipp i ppm 2 td 10/1000 sec. waveform as defined by r.e.a. 0 1.0 2.0 3.0 4.0 t time (ms)
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