description the 2sc4570 is a low supply voltage tr ansistor designed for uhf osc/mix. it is suitable for a high density surface mount assembly since the transistor has been applied super minimold package. features ? high gain bandwidth product f t = 5.5 ghz typ. @ v ce = 5 v, i c = 5 ma, f = 1 ghz low output capacitance c ob = 0.7 pf typ. @ v cb = 5 v, i e = 0 ma, f = 1 mhz 3-pin super minimold package ordering information part number quantity supplying form 2sc4570 50 pcs (non reel) 2sc4570-t1 3 kpcs/reel 8 mm wide embossed taping pin 3 (collector) face to perforation side of the tape remark to order evaluation samples, contact your nearby sales office. the unit sample quantity is 50 pcs. absolute maximum ratings (t a = +25 c) parameter symbol ratings unit collector to base voltage v cbo 20 v collector to emitter voltage v ceo 12 v emitter to base voltage v ebo 3 v collector current i c 30 ma total power dissipation p tot note 120 mw junction temperature t j 125 c storage temperature t stg ? 55 to +125 c note free air data sheet caution observe precautions when handling because these devices are sensitive to electrostatic discharge. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec compound semiconductor devices representative for availability and additional information. npn silicon rf transistor 2sc4570 npn epitaxial silicon rf transistor for uhf tuner osc/mix 3-pin super minimold the mark ? shows major revised points. document no. pu10514ej01v0ds (1st edition) (previous no. p10408ej2v0ds00) date published october 2004 cp(k) printed in japan ? nec compound semiconductor devices, ltd. 1993, 2004
electrical characteristics (t a = +25 c) parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 15 v, i e = 0 ma ? ? 100 na emitter cut-off current i ebo v eb = 1 v, i c = 0 ma ? ? 100 na collector saturation voltage v ce(sat) h fe = 10, i c = 5 ma ? ? 0.5 v dc current gain h fe note 1 v ce = 5 v, i c = 5 ma 40 100 200 ? rf characteristics gain bandwidth product f t v ce = 5 v, i c = 5 ma, f = 1.0 ghz ? 5.5 ? ghz insertion power gain ? s 21e ? 2 v ce = 5 v, i c = 5 ma, f = 1.0 ghz 5.0 ? ? db output capacitance c ob note 2 v cb = 5 v, i e = 0 ma, f = 1.0 mhz ? 0.7 0.9 pf notes 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capacit ance when the emitter grounded h fe classification rank t72 t73 t74 marking t72 t73 t74 h fe value 40 to 80 60 to 120 100 to 200 data sheet pu10514ej01v0ds 2 2sc4570
typical characteristics (t a = +25 c, unless otherwise specified) collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage dc current gain h fe collector current i c (ma) collector current dc current gain vs. gain bandwidth product f t (ghz) collector current i c (ma) vs. collector current gain bandwidth product total power dissipation p tot (mw) ambient temperature t a (?c) total power dissipation vs. ambient temperature output capacitance c ob (pf) collector to base voltage v cb (v) vs. collector to base voltage output capacitance collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage 150 100 50 0 50 100 150 free air 120 mw 0.1 0.7 0.5 0.2 1.0 2.0 2 1571020 f = 1 mhz 0 8 16 24 0.2 0.4 0.6 0.8 1.0 v ce = 5 v 0 10 20 30 246810 140 a 120 a 100 a 80 a 60 a 40 a 20 a i b = 160 a 10 50 20 100 200 0.5 1 5 2102050 v ce = 5 v 0 2 4 6 8 15 2 10 100 50 20 0.5 f = 1 ghz v ce = 5 v v ce = 3 v remark the graphs indicate nominal characteristics. data sheet pu10514ej01v0ds 3 2sc4570
frequency f (ghz) insertion power gain vs. frequency insertion power gain |s 21e | 2 (db) collector current i c (ma) insertion power gain vs. collector current insertion power gain |s 21e | 2 (db) 25 20 15 10 5 0 0.2 0.5 0.1 1.0 2.0 5.0 i c = 5 ma v ce = 5 v 8 4 16 12 0 0.5 1 5 2102050 f = 1 ghz v ce = 5 v v ce = 3 v v ce = 3 v remark the graphs indicate nominal characteristics. s-parameters s-parameters/noise parameters are provided on the nec compound semiconductor devices web site in a form (s2p) that enables direct import to a microwave circuit simulator without keyboard input. click here to download s-parameters. [rf and microwave] [device parameters] url http://www.ncsd.necel.com/ data sheet pu10514ej01v0ds 4 2sc4570
package dimensions 3-pin super minimold package (unit: mm) 0.90.1 0.3 0.15 +0.1 ?0.05 0 to 0.1 marking 2.00.2 0.65 0.65 0.3 +0.1 ?0 0.3 +0.1 ?0 1 2 3 2.10.1 1.250.1 pin connections 1. 2. 3. emitter base collector t73 data sheet pu10514ej01v0ds 5 2sc4570
m8e 00. 4 - 0110 the information in this document is current as of october, 2004. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product be fore using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation, nec compound semiconductor devices, ltd. and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ? data sheet pu10514ej01v0ds 6 2sc4570
nec compound semiconductor devices hong kong limited e-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) hong kong head office taipei branch office korea branch office tel: +852-3107-7303 tel: +886-2-8712-0478 tel: +82-2-558-2120 fax: +852-3107-7309 fax: +886-2-2545-3859 fax: +82-2-558-5209 nec electronics (europe) gmbh http://www.ee.nec.de/ tel: +49-211-6503-0 fax: +49-211-6503-1327 california eastern laboratories, inc. http://www.cel.com/ tel: +1-408-988-3500 fax: +1-408-988-0279 0406 nec compound semiconductor devices, ltd. http://www.ncsd.necel.com/ e-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) sales division tel: +81-44-435-1588 fax: +81-44-435-1579 for further information, please contact 2sc4570
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