bzd27c3v6p-m to bzd27c200p-m vishay semiconductors 17249 document number 83307 rev. 1.1, 15-sep-10 www.vishay.com 1 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com zener diodes with surge current specification features ? sillicon planar zener diodes ? low profile surface-mount package ? zener and surge current specification ? low leakage current ? excellent stability ? high temperature soldering: 260 c/10 s at terminals ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition mechanical data case: do-219ab (smf) weight: approx. 15 mg packaging codes/options: 18/10 k per 13 " reel (8 mm tape), 10 k/box 08/3 k per 7 " reel (8 mm tape), 15 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified note: 1) mounted on epoxy-glass pcb with 3 mm x 3 mm cu pads ( 40 m thick) 2) t j = 25 c prior to surge thermal characteristics t amb = 25 c, unless otherwise specified note: 1) mounted on epoxy-glass pcb with 3 mm x 3 mm cu pads ( 40 m thick) parameter test condition symbol value unit power dissipation t l = 80 c p tot 2.3 w t a = 25 c p tot 0.8 1) w non-repetitive peak pulse power dissipation 100 s square pulse 2) p zsm 300 w 10/1000 s waveform (bzd27-c7v5p-m to bzd27-c100p-m) 2) p rsm 150 w 10/1000 s waveform (bzd27-c110p-m to bzd27-c200p-m) 2) p rsm 100 w parameter test condition symbol value unit thermal resistance junction to ambient air 1) r thja 180 k/w thermal resistance junction to lead r thjl 30 k/w maximum junction temperature t j 150 c storage temperature range t s - 55 to + 150 c
bzd27c3v6p-m to bzd27c200p-m vishay semiconductors document number 83307 rev. 1.1, 15-sep-10 www.vishay.com 2 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics maximum v f = 1.2 v, at i f = 0.2 a when used as voltage regulator diodes (t j = 25 c, unless otherwise specified) note: 1) pulse test: t p 5 ms. part number marking code working voltage 1) differential resistance temperature coefficient te s t current reverse current at reverse voltage v z at i zt r dif at i z z at i z i zt i r v r v %/c ma a v min. max. typ. max. min. max. max. bzd27c3v6p-m n0 3.4 3.8 4 8 - 0.14 - 0.04 100 100 1 bzd27c3v9p-m n1 3.7 4.1 4 8 - 0.14 - 0.04 100 50 1 bzd27c4v3p-m n2 4 4.6 4 7 - 0.12 - 0.02 100 25 1 bzd27c4v7p-m n3 4.4 5 3 7 - 0.1 0 100 10 1 bzd27c5v1p-m n4 4.8 5.4 3 6 - 0.08 0.02 100 5 1 bzd27c5v6p-m n5 5.2 6 2 4 - 0.04 0.04 100 10 2 bzd27c6v2p-m n6 5.8 6.6 2 3 - 0.01 0.06 100 5 2 bzd27c6v8p-m n7 6.4 7.2 1 3 0 0.07 100 10 3 bzd27c7v5p-m n8 7 7.9 1 2 0 0.07 100 50 3 bzd27c8v2p-m n9 7.7 8.7 1 2 0.03 0.08 100 10 3 bzd27c9v1p-m o0 8.5 9.6 2 4 0.03 0.08 50 10 5 bzd27c10p-m o1 9.4 10.6 2 4 0.05 0.09 50 7 7.5 bzd27c11p-m o2 10.4 11.6 4 7 0.05 0.1 50 4 8.2 bzd27c12p-m o3 11.4 12.7 4 7 0.05 0.1 50 3 9.1 bzd27c13p-m o4 12.4 14.1 5 10 0.05 0.1 50 2 10 bzd27c15p-m o5 13.8 15.6 5 10 0.05 0.1 50 1 11 bzd27c16p-m o6 15.3 17.1 6 15 0.06 0.11 25 1 12 bzd27c18p-m o7 16.8 19.1 6 15 0.06 0.11 25 1 13 bzd27c20p-m o8 18.8 21.2 6 15 0.06 0.11 25 1 15 bzd27c22p-m o9 20.8 23.3 6 15 0.06 0.11 25 1 16 bzd27c24p-m p0 22.8 25.6 7 15 0.06 0.11 25 1 18 bzd27c27p-m p1 25.1 28.9 7 15 0.06 0.11 25 1 20 bzd27c30p-m p2 28 32 8 15 0.06 0.11 25 1 22 bzd27c33p-m p3 31 35 8 15 0.06 0.11 25 1 24 bzd27c36p-m p4 34 38 21 40 0.06 0.11 10 1 27 bzd27c39p-m p5 37 41 21 40 0.06 0.11 10 1 30 bzd27c43p-m p6 40 46 24 45 0.07 0.12 10 1 33 bzd27c47p-m p7 44 50 24 45 0.07 0.12 10 1 36 bzd27c51p-m p8 48 54 25 60 0.07 0.12 10 1 39 bzd27c56p-m p9 52 60 25 60 0.07 0.12 10 1 43 bzd27c62p-m q0 58 66 25 80 0.08 0.13 10 1 47 bzd27c68p-m q1 64 72 25 80 0.08 0.13 10 1 51 bzd27c75p-m q2 70 79 30 100 0.08 0.13 10 1 56 bzd27c82p-m q3 77 87 30 100 0.08 0.13 10 1 62 bzd27c91p-m q4 85 96 60 200 0.08 0.13 5 1 68 bzd27c100p-m q5 94 106 60 200 0.09 0.13 5 1 75 BZD27C110P-M q6 104 116 80 250 0.09 0.13 5 1 82 bzd27c120p-m q7 114 127 80 250 0.09 0.13 5 1 91 bzd27c130p-m q8 124 141 110 300 0.09 0.13 5 1 100 bzd27c150p-m q9 138 156 130 300 0.09 0.13 5 1 110 bzd27c160p-m r0 153 171 150 350 0.09 0.13 5 1 120 bzd27c180p-m r1 168 191 180 400 0.09 0.13 5 1 130 bzd27c200p-m r2 188 212 200 500 0.09 0.13 5 1 150
bzd27c3v6p-m to bzd27c200p-m vishay semiconductors document number 83307 rev. 1.1, 15-sep-10 www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com electrical characteristics when used as protection diodes (t j = 25 c, unless otherwise specified) note: 1) non-repetitive peak reverse current in accordance with "iec 60-1, section 8" (10/1000 s pulse); see fig. 5. part number rev. breakdown voltage test current temperature coefficient clamping voltage reverse current at stand-off voltage v (br)r at i test i test z at i test v c at i rsm 1) i r at v wm v ma %/c v a a v min. min. max. max . max. bzd27c7v5p-m 7 100 0 0.07 11.3 13.3 1500 6.2 bzd27c8v2p-m 7.7 100 0.03 0.08 12.3 12.2 1200 6.8 bzd27c9v1p-m 8.5 50 0.03 0.08 13.3 11.3 100 7.5 bzd27c10p-m 9.4 50 0.05 0.09 14.8 10.1 20 8.2 bzd27c11p-m 10.4 50 0.05 0.1 15.7 9.6 5 9.1 bzd27c12p-m 11.4 50 0.05 0.1 17 8.8 5 10 bzd27c13p-m 12.4 50 0.05 0.1 18.9 7.9 5 11 bzd27c15p-m 13.8 50 0.05 0.1 20.9 7.2 5 12 bzd27c16p-m 15.3 25 0.06 0.11 22.9 6.6 5 13 bzd27c18p-m 16.8 25 0.06 0.11 25.6 5.9 5 15 bzd27c20p-m 18.8 25 0.06 0.11 28.4 5.3 5 16 bzd27c22p-m 20.8 25 0.06 0.11 31 4.8 5 18 bzd27c24p-m 22.8 25 0.06 0.11 33.8 4.4 5 20 bzd27c27p-m 25.1 25 0.06 0.11 38.1 3.9 5 22 bzd27c30p-m 28 25 0.06 0.11 42.2 3.6 5 24 bzd27c33p-m 31 25 0.06 0.11 46.2 3.2 5 27 bzd27c36p-m 34 10 0.06 0.11 50.1 3 5 30 bzd27c39p-m 37 10 0.06 0.11 54.1 2.8 5 33 bzd27c43p-m 40 10 0.07 0.12 60.7 2.5 5 36 bzd27c47p-m 44 10 0.07 0.12 65.5 2.3 5 39 bzd27c51p-m 48 10 0.07 0.12 70.8 2.1 5 43 bzd27c56p-m 52 10 0.07 0.12 78.6 1.9 5 47 bzd27c62p-m 58 10 0.08 0.13 86.5 1.7 5 51 bzd27c68p-m 64 10 0.08 0.13 94.4 1.6 5 56 bzd27c75p-m 70 10 0.08 0.13 103.5 1.5 5 62 bzd27c82p-m 77 10 0.08 0.13 114 1.3 5 68 bzd27c91p-m 85 5 0.09 0.13 126 1.2 5 75 bzd27c100p-m 94 5 0.09 0.13 139 1.1 5 82 BZD27C110P-M 104 5 0.09 0.13 139 0.72 5 91 bzd27c120p-m 114 5 0.09 0.13 152 0.65 5 100 bzd27c130p-m 124 5 0.09 0.13 169 0.59 5 110 bzd27c150p-m 138 5 0.09 0.13 187 0.53 5 120 bzd27c160p-m 153 5 0.09 0.13 205 0.48 5 130 bzd27c180p-m 168 5 0.09 0.13 229 0.43 5 150 bzd27c200p-m 188 5 0.09 0.13 254 0.39 5 160
bzd27c3v6p-m to bzd27c200p-m vishay semiconductors document number 83307 rev. 1.1, 15-sep-10 www.vishay.com 4 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com typical characteristics t amb = 25 c, unless otherwise specified figure 1. forward current vs. forward voltage figure 2. typ. diode capacitance vs. reverse voltage figure 3. power dissipatio n vs. ambient temperature 0.1 1 10 0.6 0. 8 1.0 1.2 1.4 1.6 17411 i f - for w ard c u rrent (a) v f - for w ard v oltage ( v ) max. v f ty p. v f 10 100 1000 10 000 0 0.5 1.0 1.5 2.0 2.5 3.0 17412 c d - typ. j u nction capacitance (pf) v r - re v erse v oltage ( v ) c5 v 1p c6 v8 p c12p c27p c51p c200p c1 8 p 0 1.0 0.5 1.5 2.5 2.0 3.0 0 25 50 75 100 125 150 17413 p tot - po w er dissipation ( w ) t am b - am b ient temperat u re (c) am b ient temperat u re tie point temperat u re figure 4. maximum pulse power dissipation vs. zener voltage figure 5. non-repetitive peak reverse current pulse definition 0 40 20 120 140 60 100 8 0 160 0 50 100 150 200 17414 p rsm - max. p u lse po w er dissipation ( w ) v znom - zener v oltage ( v ) 17415 t i rsm ( % ) 100 90 50 10 t 1 t 1 = 10 s t 2 = 1000 s t 2
bzd27c3v6p-m to bzd27c200p-m vishay semiconductors document number 83307 rev. 1.1, 15-sep-10 www.vishay.com 5 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches): do219-ab (smf) foot print re commendation: re v . 3 - date: 13. march 2007 doc u ment no.:s 8 - v -3915.01-001 (4) 1.3 (0.051) 1.3 (0.051) 2.9 (0.114) 1.4 (0.055) 2.9 (0.114) 2.7 (0.106) 3.9 (0.154) 3.5 (0.13 8 ) 0. 8 5 (0.033) 0.35 (0.014) 1.2 (0.047) 0. 8 (0.031) 1.9 (0.075) 1.7 (0.067) 1.0 8 (0.043) 0. 88 (0.035) 0.25 (0.010) 0.05 (0.002) 0.1 (0.004) 0 (0.000) 5 5 created - date: 15. fe b r u ary 2005 17247 detail z enlarged
bzd27c3v6p-m to bzd27c200p-m vishay semiconductors document number 83307 rev. 1.1, 15-sep-10 www.vishay.com 6 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com blistertape dimensions for smf in millimeters 1 8 513 ps doc u ment- n o.: s 8 - v -3717.02-001 (3)
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