i c , nom 150 a i c 200 a min. typ. max. - 1,7 2,15 v - 2,0 - v i2t - - 400 i ges - 5,0 5,8 6,5 v t p = 1ms i frm 300 a 300 dauergleichstrom i f 150 t c = 25c; transistor repetitive peak collector current t p = 1ms, t c = 80c periodischer kollektor spitzenstrom i crm +/- 20 4,56 k a2s 0,4 - nf v a na - grenzlastintegral reverse transfer capacitance rckwirkungskapazit?t f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v gate emitter leakage current gate emitter reststrom v ce = 0v, v ge = 20v, t vj = 25c i c = 150a, v ge = 15v, t vj = 125c, gate schwellenspannung i c = 6ma, v ce = v ge , t vj = 25c, gate threshold voltage w elektrische eigenschaften / electrical properties h?chstzul?ssige werte / maximum rated values kollektor emitter sperrspannung t c = 80c kollektor dauergleichstrom t vj = 25c v a 1200 v r = 0v, t p = 10ms, t vj = 125c i2t value repetitive peak forward current isolations prfspannung insulation test voltage rms, f= 50hz, t= 1min. kollektor emitter reststrom prepared by: mod-d2; mark mnzer kv 2,5 nf - c t c = 25c dc collector current v ces collector emitter voltage transistor wechselrichter / transistor inverter date of publication: 2002-09-03 kollektor emitter s?ttigungsspannung i c = 150a, v ge = 15v, t vj = 25c, collector emitter saturation voltage periodischer spitzenstrom gesamt verlustleistung total power dissipation gate emitter spitzenspannung gate emitter peak voltage dc forward current i ces collector emitter cut off current gateladung v ge = -15v...+15v c res approved: sm tm; robert severin input capacitance gate charge v ce = 1200v, v ge = 0v, t vj = 25c technische information / technical information fs150r12ke3 igbt-module igbt-modules v isol p tot 700 eingangskapazit?t - v cesat charakteristische werte / characteristic values v ges revision: 3.0 v ge(th) f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v c ies 10,6 1,4 5ma - - q g - 1 (8) db_fs150r12ke3_3.0.xls 2002-09-03
technische information / technical information fs150r12ke3 igbt-module igbt-modules min. typ. max. - 0,26 - s - 0,29 - s - 0,03 - s - 0,05 - s - 0,42 - s - 0,52 - s - 0,07 - s - 0,09 - s - 1,65 2,15 v - 1,65 - v - 190 - a - 210 - a - 17 - c - 30 - c - 7 - mj - 13 - mj i f = 150a, -di f /dt= 4000a/s ausschaltenergie pro puls reverse recovery energy e rec v r = 600v, v ge = -10v, t vj = 125c i f = 150a, -di f /dt= 4000a/s v r = 600v, v ge = -10v, t vj = 25c i c = 150a, v cc = 600v v r = 600v, v ge = -10v, t vj = 25c sperrverz?gerungsladung recovered charge e on i c = 150a, v cc = 600v, l = 70nh v ge = 15v, r g = 2,4 ? , t vj = 125c fallzeit (induktive last) fall time (inductive load) sc data einschaltverlustenergie pro puls i sc - v cc = 900v, v cemax = v ces - l ce di/dt 600 charakteristische werte / characteristic values kurzschlussverhalten t p 10s, v ge 15v, t vj 125c abschaltverz?gerungszeit (induktive last) turn off delay time (inductive load) i c = 150a, v cc = 600v turn on energy loss per pulse einschaltverz?gerungszeit (induktive last) turn on delay time (inductive load) 21 - nh - a rckstromspitze peak reverse recovery current i rm i f = 150a, v ge = 0v, t vj = 25c i f = 150a, v ge = 0v, t vj = 125c v f forward voltage durchlassspannung v r = 600v, v ge = -10v, t vj = 25c modulinduktivit?t t c = 25c stray inductance module l ce diode wechselrichter / diode inverter v r = 600v, v ge = -10v, t vj = 125c q r 1,8 leitungswiderstand, anschluss-chip lead resistance, terminal-chip r cc/ee ausschaltverlustenergie pro puls turn off energy loss per pulse e off i c = 150a, v cc = 600v, l = 70nh v ge = 15v, r g = 2,4 ? , t vj = 125c m ? - 16 - mj - mj - 17 - t d,off v ge = 15v, r g = 2,4 ? , t vj = 25c v ge = 15v, r g = 2,4 ? , t vj = 125c i c = 150a, v cc = 600v v ge = 15v, r g = 2,4 ? , t vj = 25c v ge = 15v, r g = 2,4 ? , t vj = 125c i c = 150a, v cc = 600v t r v ge = 15v, r g = 2,4 ? , t vj = 25c v ge = 15v, r g = 2,4 ? , t vj = 125c t f v ge = 15v, r g = 2,4 ? , t vj = 25c v ge = 15v, r g = 2,4 ? , t vj = 125c i f = 150a, -di f /dt= 4000a/s charakteristische werte / characteristic values t d,on - - v r = 600v, v ge = -10v, t vj = 125c transistor wechselrichter / transistor inverter anstiegszeit (induktive last) rise time (inductive load) 2 (8) db_fs150r12ke3_3.0.xls 2002-09-03
technische information / technical information fs150r12ke3 igbt-module igbt-modules min. typ. max. - - 0,180 k/w - - 0,340 k/w mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid with the belonging technical notes. innere isolation case, see appendix 3 300 g 6nm - weight g gewicht t vj op lagertemperatur storage temperature operation temperature betriebstemperatur t stg m mounting torque schraube / screw m5 cti c -40 225 c al 2 o 3 c b-wert r 2 = r 1 exp[b(1/t 2 - 1/t 1 )] pro modul / per module paste = 1w/m*k / grease = 1w/m*k - r thjc innerer w?rmewiderstand; dc thermal resistance, junction to case; dc transistor wechelr. / transistor inverter diode wechselrichter / diode inverter b 25/50 k/w 20 mw - 3375 - k - 0,009 abweichung von r 100 r 25 - charakteristische werte / characteristic values ntc-widerstand / ntc-thermistor nennwiderstand t c = 25c rated resistance b-value mm mm % t c = 25c k ? - r thck -40 - 125 p 25 150 - 125 - 10,0 mechanische eigenschaften / mechanical properties internal insulation thermal resistance, case to heatsink h?chstzul?ssige sperrschichttemp. geh?use, siehe anlage bergangs w?rmewiderstand t vj max maximum junction temperature 5 - - deviation of r 100 verlustleistung t c = 100c, r 100 = 493 ? ? r/r power dissipation thermische eigenschaften / thermal properties -5 - -5 7,5 comperative tracking index anzugsdrehmoment, mech. befestigung kriechstrecken creepage distance luftstrecken clearence distance 3 (8) db_fs150r12ke3_3.0.xls 2002-09-03
technische information / technical information fs150r12ke3 igbt-module igbt-modules i c = f(v ce ) t v j = 125c v ge = 15v i c = f(v ce ) output characteristic (typical) output characteristic (typical) a usgangs k enn li n i en f e ld (t yp i sc h) ausgangskennlinie (typisch) 0 30 60 90 120 150 180 210 240 270 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 v ce [v] i c [a] tvj = 25c tvj = 125c 0 30 60 90 120 150 180 210 240 270 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 v ce [v] i c [a] vge=19v vge=17v vge=15v vge=13v vge=11v vge=9v 4 (8) db_fs150r12ke3_3.0.xls 2002-09-03
technische information / technical information fs150r12ke3 igbt-module igbt-modules durchlasskennlinie der inversdiode (typisch) i f = f(v f ) forward caracteristic of inverse diode (typical) transfer characteristic (typical) i c = f(v ge ) v ce = 20v b er t ragungsc h ara kt er i s tik (t yp i sc h) 0 30 60 90 120 150 180 210 240 270 300 5678910111213 v ge [v] i c [a] tvj = 25c tvj = 125c 0 30 60 90 120 150 180 210 240 270 300 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 v f [v] i f [a] tvj = 25c tvj = 125c 5 (8) db_fs150r12ke3_3.0.xls 2002-09-03
technische information / technical information fs150r12ke3 igbt-module igbt-modules e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) v ge =15v, i c =150a, v ce =600v, t v j =125c s c h a lt ver l us t e (t yp i sc h) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) v ge =15v, r g =2,4 ? , v ce =600v, t v j =125c s c h a lt ver l us t e (t yp i sc h) switching losses (typical) 0 5 10 15 20 25 30 35 40 0 30 60 90 120 150 180 210 240 270 300 i c [a] e [mj] eon eoff erec 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16 r g [ ? ] e [mj] eon eoff erec 6 (8) db_fs150r12ke3_3.0.xls 2002-09-03
technische information / technical information fs150r12ke3 igbt-module igbt-modules sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge =15v, r g =2,4 ? , t v j =125c i r i [k/kw] : igbt i [s] : igbt r i [k/kw] : diode i [s] : diode 1 19,31 2,601e-02 171,43 2,601e-02 6,499e-02 6,43 1,187e-05 142,83 6,499e-02 2,364e-03 1,187e-05 4 z thjc = f (t) 3 2,364e-03 3,41 75,59 90,61 10,39 2 transienter w?rmewiderstand transient thermal impedance 0,01 0,1 1 0,001 0,01 0,1 1 10 t [s] z thjc [k/w] zth : igbt zth : diode 0 50 100 150 200 250 300 350 0 200 400 600 800 1000 1200 1400 v ce [v] i c [a] ic,chip ic,modul 7 (8) db_fs150r12ke3_3.0.xls 2002-09-03
technische information / technical information fs150r12ke3 igbt-module igbt-modules geh?usema?e / schaltbild package outline / circuit diagram 8 (8) db_fs150r12ke3_3.0.xls 2002-09-03
|
