SSF6808 ? silikron semiconductor co.,ltd. 2008.8.1 version : 1.0 page 1of5 absolute maximum ratings parameter max. units i d @t c =25 ? c continuous drain current,vgs@10v 110 i d @t c =100 ? c continuous drain current,vgs@10v 80 i dm pulsed drain current 400 a p d @t c =25 ? c power dissipation 150 w linear derating factor 2.0 w/ ? c v gs gate-to-source voltage 20 v dv/dt peak diode recovery voltage 31 v/ns e as single pulse avalanche energy 480 mj e ar repetitive avalanche energy tbd t j t stg operating junction and storage temperature range ?55 to +150 ? c thermal resistance parameter min. typ. max. units r jc junction-to-case ? 0.83 ? r ja junction-to-ambient ? ? 62 ? c/w electrical characteristics @tj=25 ? c(unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 55 ? ? v v gs =0v,i d =250 a r ds(on) static drain-to-source on-resistance ? 6 8 m ? v gs =10v,i d =68a v gs(th) gate threshold voltage 2.0 3 4.0 v v ds =v gs ,i d =250 a g fs forward transconductance - 58 ? s v ds =5v,i d =30a ? ? 1 v ds =55v,v gs =0v i dss drain-to-source leakage current ? ? 10 a v ds =55v, v gs =0v,t j =150 ? c i gss gate-to-source forward leakage ? ? 100 na v gs =20v SSF6808 top view (to220) id =110a bv=55v rdson=8mohm feathers: ? advanced trench process technology ? ultra low rdson, typical 6mohm ? high avalanche energy, 100% test ? fully characterized avalanche voltage and current description: the SSF6808 is a new generation of middle voltage and high current n?channel enhancement mode trench power mosfet. this new technology in creases the dev ice reliability and electrical parameter repeatability. SSF6808 is assembled in high reliability and qualified assembly house. application: ? power switching application
SSF6808 gate-to-source reverse leakage ? ? -100 v gs =-20v q g total gate charge ? 90 ? q gs gate-to-source charge ? 14 ? q gd gate-to-drain("miller") charge ? 24 ? nc i d =30a v dd =30v v gs =10v t d(on) turn-on delay time ? 18.2 ? t r rise time ? 15.6 ? t d(off) turn-off delay time ? 70.5 ? t f fall time ? 13.8 ? ns v dd =30v i d =2a ,r l =15 ? r g =2.5 ? v gs =10v c iss input capacitance ? 3150 ? c oss output capacitance ? 300 ? c rss reverse transfer capacitance ? 240 ? pf v gs =0v v ds =25v f=1.0mhz source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current . (body diode) ? ? 110 i sm pulsed source current . (body diode) ? ? 400 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage ? ? 1.3 v t j =25 ? c,i s =68a,v gs =0v t rr reverse recovery time 57 ? ns q rr reverse recovery charge 107 ? nc t j =25 ? c,i f =68a di/dt=100a/ s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + ld) notes: repetitive rating; pulse width limited by max junction temperature. test condition: l =0.3mh, id = 57a, vdd = 27.5v pulse width 300 s, duty cycle 1.5% ; rg = 25 ??? starting tj = 25c bv dss eas test circuit gate charge test circuit ? silikron semiconductor co.,ltd. 2008.8.1 version : 1.0 page 2of5
SSF6808 ? silikron semiconductor co.,ltd. 2008.8.1 version : 1.0 page 3of5 gate charge source-drain diode forward voltage switch time test circuit switch time waveforms on resistance vs junction temperature breakdown voltage vs junction temperature
SSF6808 gate charge source-drain diode forward voltage max drain current vs junction temperature safe operation area transient thermal impedance curve ? silikron semiconductor co.,ltd. 2008.8.1 version : 1.0 page 4of5
SSF6808 to220 mechanical data: ? silikron semiconductor co.,ltd. 2008.8.1 version : 1.0 page 5of5
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