View MB81F641642C-103FN_6656399.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

ds05-11045-1e fujitsu semiconductor data sheet memory cmos 4 1 m 16 bit synchronous dynamic ram mb81f641642c-102/-103/-102l/-103l cmos 4-bank 1,048,576-word 16 bit synchronous dynamic random access memory n description the fujitsu mb81f641642c is a cmos synchronous dynamic random access memory (sdram) containing 67,108,864 memory cells accessible in a 16-bit format. the mb81f641642c features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. the mb81f641642c sdram is designed to reduce the complexity of using a standard dynamic ram (dram) which requires many control signal timing constraints, and may improve data bandwidth of memory as much as 5 times more than a standard dram. the mb81f641642c is ideally suited for workstations, personal computers, laser printers, high resolution graphic adapters/accelerators and other applications where an extremely large memory and bandwidth are required and where a simple interface is needed. n product line & features parameter mb81f641642c -102 -102l -103 -103l cl - t rcd - t rp 2 - 2 - 2 clk min. 3 - 2 - 2 clk min. clock frequency 100 mhz max. 100 mhz max. burst mode cycle time 10 ns min. 10 ns min. access time from clock (cl = 3) 6 ns max. 6 ns max. operating current (2 banks active) 105 ma max. 105 ma max. power down mode current (i cc2p ) 2 ma max. 1 ma max. 2 ma max. 1 ma max. self refresh current (i cc6 ) 1 ma max. 500 m a max. 1 ma max. 500 m a max. ? single +3.3 v supply 0.3 v tolerance ? lvttl compatible i/o ? 4 k refresh cycles every 65.6 ms ? four bank operation ? burst read/write operation and burst read/single write operation capability ? standard and low power versions ? programmable burst type, burst length, and cas latency ? auto-and self-refresh (every 16 m s) ? cke power down mode ? output enable and input data mask
2 mb81f641642c-102/-103/-102l/-103l n pac k ag e package and ordering information C 54-pin plastic (400 mil) tsop-ii, order as mb81f641642c- fn (std power), mb81f641642c- lfn (low power), mb81f641642c- efn (extra power) plastic tsop(ii) package (fpt-54p-m02) (normal bend) marking side
3 mb81f641642c-102/-103/-102l/-103l n pin assignments and descriptions 54-pin tsop(ii) (top view) * : these pins are connected internally in the chip. pin number symbol function 1, 3, 9, 14, 27, 43, 49 v cc , v ccq supply voltage 2, 4, 5, 7, 8, 10, 11, 13, 42, 44, 45, 47, 48, 50, 51, 53 dq 0 to dq 15 data i/o 6, 12, 28, 41, 46, 52, 54 v ss , v ssq * ground 36, 40 n.c. no connection 16 we write enable 17 cas column address strobe 18 ras row address strobe 19 cs chip select 20, 21 a 13 (ba 0 ), a 12 (ba 1 ) bank select (bank address) 22 ap auto precharge enable 22, 23, 24, 25, 26, 29, 30, 31, 32, 33, 34, 35 a 0 to a 11 address input ?row: a 0 to a 11 ? column: a 0 to a 7 37 cke clock enable 38 clk clock input 15, 39 dqml, dqmu input mask/output enable ras a 1 a 0 a 10 /ap a 13 cs cas we v ccq v ssq v ccq v ssq dq 6 dq 2 v cc a 6 a 7 a 8 a 9 cke clk dqmu v ccq v ssq v ccq v ssq dq 9 dq 13 v ss v cc a 3 a 2 v ss a 4 a 5 (marking side) 42 41 40 39 38 37 36 35 34 54 53 52 51 50 49 48 47 46 45 1 2 3 4 5 9 10 6 7 8 13 14 15 16 17 18 19 20 21 22 44 43 11 12 33 32 31 30 29 28 23 24 25 26 27 dq 1 dq 0 dq 4 dq 3 dqml dq 7 dq 5 a 12 v cc dq 10 dq 11 dq 12 dq 14 dq 15 dq 8 v ss n.c. n.c. a 11
4 mb81f641642c-102/-103/-102l/-103l n block diagram fig. 1 C mb81f641642c block diagram bank-1 v cc v ss /v ssq clk cke a 0 to a 11 , ap dq 0 to dq 15 command decoder clock buffer address buffer/ register i/o data buffer/ register mode register ras cas we dram core (4,096 256 16) col. addr. ras cas we cs bank-0 i/o row addr. to each block control signal latch dqml v ccq bank-2 bank-3 a 12 , a 13 column address counter dqmu
5 mb81f641642c-102/-103/-102l/-103l n functional truth table note 1 command truth table notes 2, 3, and 4 notes: *1. v = valid, l = logic low, h = logic high, x = either l or h. *2. all commands assumes no csus command on previous rising edge of clock. *3. all commands are assumed to be valid state transitions. *4. all inputs are latched on the rising edge of clock. *5. nop and desl commands have the same effect on the part. *6. read, reada, writ and writa commands should only be issued after the corresponding bank has been activated (actv command). refer to state diagram. *7. actv command should only be issued after corresponding bank has been precharged (pre or pall command). *8. required after power up. *9. mrs command should only be issued after all banks have been precharged (pre or pall command). refer to state diagram. function notes symbol cke cs ras cas we a 13 , a 12 (ba) a 10 (ap) a 11 a 9 to a 0 n-1 n device deselect *5deslhxhxxxxxxx no operation *5nophxlhhhxxxx burst stop bsthxlhhlxxxx read *6 read h x l h l h v l x v read with auto-precharge *6 reada h x l h l h v h x v write *6 writ h x l h l l v l x v write with auto-precharge *6 writa h x l h l l v h x v bank active (ras ) *7actvhxllhhvvvv precharge single bank pre h x l l h l v l x x precharge all banks pall h x l l h l x h x x mode register set *8, 9mrshxll llxxxv
6 mb81f641642c-102/-103/-102l/-103l dqm truth table cke truth table notes: *1. the csus command requires that at least one bank is active. refer to state diagram. *2. ref and self commands should only be issued after all banks have been precharged (pre or pall command). refer to state diagram. *3. self and pd commands should only be issued after the last read data have been appeared on dq. *4. cke should be held high within t rc . function command cke dqml dqmu n-1 n data write/output enable for lower byte enbl l h x l x data write/output enable for upper byte enbl u h x x l data mask/output disable for lower byte mask l h x h x data mask/output disable for upper byte mask u h x x h current state function notes symbol cke cs ras cas we a 13 , a 12 (ba) a 10 (ap) a 11 , a 9 to a 0 n-1 n bank activeclock suspend mode entry*1csushlxxxxxxx any (except idle) clock suspend continue *1 llxxxxxxx clock suspend clock suspend mode exit lhxxxxxxx idle auto-refresh command *2 ref h h l l l h x x x idle self-refresh entry *2, 3 self h l l l l h x x x self refresh self-refresh exit *4 selfx lh l h h h x x x lhhxxxxxx idle power down entry *3 pd hl l h h h x x x hlhxxxxxx power down power down exit lh l h h h x x x lhhxxxxxx
7 mb81f641642c-102/-103/-102l/-103l operation command table (applicable to single bank) (continued) current state cs ras cas we addr command function notes idle h x x x x desl nop lhhh x nop nop lhhl x bst nop l h l h ba, ca, ap read/reada illegal *2 l h l l ba, ca, ap writ/writa illegal *2 l l h h ba, ra actv bank active l l h l ba, ap pre/pall nop (pall may affect other banks.) l l l h x ref/self auto-refresh or self-refresh *3 llll mode mrs mode register set (idle after t rsc ) *3, 7 bank active h x x x x desl nop lhhh x nop nop lhhl x bst nop l h l h ba, ca, ap read/reada begin read; determine ap l h l l ba, ca, ap writ/writa begin write; determine ap l l h h ba, ra actv illegal *2 l l h l ba, ap pre/pall precharge; determine precharge type (pall may affect other banks.) lllh x ref/selfillegal llll mode mrs illegal
8 mb81f641642c-102/-103/-102l/-103l (continued) current state cs ras cas we addr command function notes read hxxx x desl nop (continue burst to end ? bank active) lhhh x nop nop (continue burst to end ? bank active) l h h l x bst burst stop ? bank active l h l h ba, ca, ap read/reada terminate burst, new read; determine ap l h l l ba, ca, ap writ/writa terminate burst, start write; determine ap *4 l l h h ba, ra actv illegal *2 l l h l ba, ap pre/pall terminate burst, precharge ? idle; determine precharge type lllh x ref/selfillegal llll mode mrs illegal write hxxx x desl nop (continue burst to end ? bank active) lhhh x nop nop (continue burst to end ? bank active) l h h l x bst burst stop ? bank active l h l h ba, ca, ap read/reada terminate burst, start read; determine ap l h l l ba, ca, ap writ/writa terminate burst, new write; determine ap l l h h ba, ra actv illegal *2 l l h l ba, ap pre/pall terminate burst, precharge ? idle; determine precharge type (pall may affect other banks.) *4 lllh x ref/selfillegal llll mode mrs illegal
9 mb81f641642c-102/-103/-102l/-103l (continued) current state cs ras cas we addr command function notes read with auto- precharge hxxx x desl nop (continue burst to end ? precharge ? idle) lhhh x nop nop (continue burst to end ? precharge ? idle) l h h l x bst illegal l h l h ba, ca, ap read/reada illegal l h l l ba, ca, ap writ/writa illegal l l h h ba, ra actv illegal *2 l l h l ba pre illegal *2 l l h l ap pall illegal lllh x ref/selfillegal llll mode mrs illegal write with auto- precharge hxxx x desl nop (continue burst to end ? precharge ? idle) lhhh x nop nop (continue burst to end ? precharge ? idle) l h h l x bst illegal l h l h ba, ca, ap read/reada illegal l h l l ba, ca, ap writ/writa illegal l l h h ba, ra actv illegal *2 l l h l ba pre illegal *2 l l h l ap pall illegal lllh x ref/selfillegal llll mode mrs illegal
10 mb81f641642c-102/-103/-102l/-103l (continued) current state cs ras cas we addr command function notes precharge h x x x x desl nop (idle after t rp ) l h h h x nop nop (idle after t rp ) l h h l x bst nop (idle after t rp ) l h l h ba, ca, ap read/reada illegal *2 l h l l ba, ca, ap writ/writa illegal *2 l l h h ba, ra actv illegal *2 l l h l ba, ap pre/pall nop (pall may affect other bank) *5 lllh x ref/selfillegal llll mode mrs illegal bank activating h x x x x desl nop (bank active after t rcd ) l h h h x nop nop (bank active after t rcd ) l h h l x bst nop (bank active after t rcd ) l h l h ba, ca, ap read/reada illegal *2 l h l l ba, ca, ap writ/writa illegal *2 l l h h ba, ra actv illegal *2 l l h l ba pre illegal *2 l l h l ap pall illegal lllh x ref/selfillegal llll mode mrs illegal
11 mb81f641642c-102/-103/-102l/-103l (continued) abbreviations: ra = row address ba = bank address ca = column address ap = auto precharge current state cs ras cas we addr command function notes refreshing h x x x x desl nop (idle after t rc ) l h h x x nop/bst nop (idle after t rc ) lhlx x read/reada/ writ/writa illegal llhx x actv/ pre/pall illegal lllx x ref/self/ mrs illegal mode register setting h x x x x desl nop (idle after t rsc ) l h h h x nop nop (idle after t rsc ) l h h l x bst illegal lhlx x read/reada/ writ/writa illegal llxx x actv/pre/ pall/ref/ self/mrs illegal
12 mb81f641642c-102/-103/-102l/-103l command truth table for cke (continued) current state cke n-1 cke n cs ras cas we addr function notes self- refresh hxxxxx x invalid lhhxxx x exit self-refresh (self-refresh recovery ? idle after t rc ) lhlhhh x exit self-refresh (self-refresh recovery ? idle after t rc ) lhlhhl x illegal lhlhlx x illegal l h l l x x x illegal l l x x x x x nop (maintain self-refresh) self- refresh recovery lxxxxx x invalid h h h x x x x idle after t rc h h l h h h x idle after t rc h h l h h l x illegal h h l h l x x illegal h h l l x x x illegal hlxxxx x illegal
13 mb81f641642c-102/-103/-102l/-103l (continued) current state cke n-1 cke n cs ras cas we addr function notes power down hxxxxx x invalid lh hxxx x exit power down mode ? idle lhhh x l l x x x x x nop (maintain power down mode) l h l l x x x illegal lhlhlx x illegal lhlhhl x illegal all banks idle h h h x x x refer to the operation command table. h h l h x x refer to the operation command table. h h l l h x refer to the operation command table. h h l l l h x auto-refresh hhllll moderefer to the operation comm and table. h l h x x x x power down *6 h l l h h h x power down *6 h l l h h l illegal h l l h l x x illegal hlllhx x illegal hllllh x self-refresh *6 hlllll x illegal lxxxxx x invalid
14 mb81f641642c-102/-103/-102l/-103l (continued) notes: *1. all entries assume the cke was high during the proceeding clock cycle and the current clock cycle. illegal means dont used command. if used, power up sequence be asserted after power shut down. *2. illegal to bank in specified state; entry may be legal in the bank specified by ba, depending on the state of that bank. *3. illegal if any bank is not idle. *4. must satisfy bus contention, bus turn around, and/or write recovery requirements. *5. nop to bank precharging or in idle state. may precharge bank spesified by ba (and ap). *6. self command should only be issued after the last read data have been appeared on dq. *7. mrs command should only be issued on condition that all dq are in hi-z. current state cke n-1 cke n cs ras cas we addr function notes bank active bank activating read/write read with auto- precharge/ write with auto- precharge h h x x x x x refer to the operation command table. h l x x x x x begin clock suspend next cycle l h x x x x x exit clock suspend next cycle l l x x x x x maintain clock suspend clock suspend hxxxxx x invalid l h x x x x x exit clock suspend next cycle l l x x x x x maintain clock suspend any state other than listed above lxxxxx x invalid h h x x x x x refer to the operation command table. hlxxxx x illegal
15 mb81f641642c-102/-103/-102l/-103l n functional description sdram basic function three major differences between this sdram and conventional drams are: synchronized operation, burst mode, and mode register. the synchronized operation is the fundamental difference. an sdram uses a clock input for the synchronization, where the dram is basically asynchronous memory although it has been using two clocks, ras and cas . each operation of dram is determined by their timing phase differences while each operation of sdram is determined by commands and all operations are referenced to a positive clock edge. fig 3 shows the basic timing diagram differences between sdrams and drams. the burst mode is a very high speed access mode utilizing an internal column address generator. once a column addresses for the first access is set, following addresses are automatically generated by the internal column address counter. the mode registe r is to justify the sdram operation and function into desired system conditions. mode register table shows how sdram can be configured for system requirement by mode register programming. clock (clk) and clock enable (cke) all input and output signals of sdram use register type buffers. a clk is used as a trigger for the register and internal burst counter increment. all inputs are latched by a positive edge of clk. all outputs are validated by the clk. cke is a high active clock enable signal. when cke = low is latched at a clock input during active cycle, the next clock will be internally masked. during idle state (all banks have been precharged), the power down mode (standby) is entered with cke = low and this will make extremely low standby current. chip select (cs ) cs enables all commands inputs, ras , cas , and we , and address input. when cs is high, command signals are negated but internal operation such as burst cycle will not be suspended. if such a control isnt needed, cs can be tied to ground level. command input (ras , cas and we ) unlike a conventional dram, ras , cas , and we do not directly imply sdram operation, such as row address strobe by ras . instead, each combination of ras , cas , and we input in conjunction with cs input at a rising edge of the clk determines sdram operation. refer to functional truth table in page 5. address input (a 0 to a 11 ) address input selects an arbitrary location of a total of 1,048,576 words of each memory cell matrix. a total of fourteen address input signals are required to decode such a matrix. sdram adopts an address multiplexer in order to reduce the pin count of the address line. at a bank active command (actv), twelve row addresses are initially latched and the remainder of eight column addresses are then latched by a column address strobe command of either a read command (read or reada) or write command (writ or writa). bank select (a 13 , a 12 ) this sdram has four banks and each bank is organized as 1 m words by 16-bit. bank selection by a 13 , a 12 occurs at bank active command (actv) followed by read (read or reada), write (writ or writa), and precharge command (pre).
16 mb81f641642c-102/-103/-102l/-103l data inputs and outputs (dq 0 to dq 15 ) input data is latched and written into the memory at the clock following the write command input. data output is obtained by the following conditions followed by a read command input: t rac ; from the bank active command when t rcd (min) is satisfied. (this parameter is reference only.) t cac ; from the read command when t rcd is greater than t rcd (min). (this parameter is reference only.) t ac ; from the clock edge after t rac and t cac . the polarity of the output data is identical to that of the input. data is valid between access time (determined by the three conditions above) and the next positive clock edge (t oh ). data i/o mask (dqml/dqmu) dqml and dqmu are an active high enable input and has an output disable and input mask function. during burst cycle and when dqml/dqmu = high is latched by a clock, input is masked at the same clock and output will be masked at the second clock later while internal burst counter will increment by one or will go to the next stage depending on burst type. burst mode operation and burst type the burst mode provides faster memory access. the burst mode is implemented by keeping the same row address and by automatic strobing column address. access time and cycle time of burst mode is specified as t ac and t ck , respectively. the internal column address counter operation is determined by a mode register which defines burst type and burst count length of 1, 2, 4 or 8 bits of boundary. in order to terminate or to move from the current burst mode to the next stage while the remaining burst count is more than 1, the following combinations will be required: the burst type can be selected either sequential or interleave mode if burst length is 2, 4 or 8. the sequential mode is an incremental decoding scheme within a boundary address to be determined by count length, it assigns +1 to the previous (or initial) address until reaching the end of boundary address and then wraps round to least significant address (= 0). the interleave mode is a scrambled decoding scheme for a 0 and a 2 . if the first access of column address is even (0), the next address will be odd (1), or vice-versa. (continued) current stage next stage method (assert the following command) burst read burst read read command burst read burst write 1st step mask command (normally 3 clock cycles) 2nd step write command after l owd burst write burst write write command burst write burst read read command burst read precharge precharge command burst write precharge precharge command
17 mb81f641642c-102/-103/-102l/-103l (continued) when the full burst operation is executed at single write mode, auto-precharge command is valid only at write operation. the burst type can be selected either sequential or interleave mode. but only the sequential mode is usable to the full column burst. the sequential mode is an incremental decoding scheme within a boundary address to be determined by burst length, it assigns +1 to the previous (or initial) address until reaching the end of boundary address and then wraps round to least significant address (= 0). full column burst and burst stop command (bst) the full column burst is an option of burst length and available only at sequential mode of burst type. this full column burst mode is repeatedly access to the same column. if burst mode reaches end of column address, then it wraps round to first column address (= 0) and continues to count until interrupted by the news read (read) /write (writ), precharge (pre), or burst stop (bst) command. the selection of auto-precharge option is illegal during the full column burst operation except write command at burst read & single write mode. the bst command is applicable to terminate the burst operation. if the bst command is asserted during the burst mode, its operation is terminated immediately and the internal state moves to bank active. when read mode is interrupted by bst command, the output will be in high-z. for the detail rule, please refer to timing diagram-8. when write mode is interrupted by bst command, the data to be applied at the same time with bst command will be ignored. burst read & single write the burst read and single write mode provides single word write operation regardless of its burst length. in this mode, burst read operation does not be affected by this mode. burst length starting column address a 2 a 1 a 0 sequential mode interleave 2 x x 0 0 C 1 0 C 1 x x 1 1 C 0 1 C 0 4 x 0 0 0 C 1 C 2 C 3 0 C 1 C 2 C 3 x 0 1 1 C 2 C 3 C 0 1 C 0 C 3 C 2 x 1 0 2 C 3 C 0 C 1 2 C 3 C 0 C 1 x 1 1 3 C 0 C 1 C 2 3 C 2 C 1 C 0 8 0 0 0 0 C 1 C 2 C 3 C 4 C 5 C 6 C 7 0 C 1 C 2 C 3 C 4 C 5 C 6 C 7 0 0 1 1 C 2 C 3 C 4 C 5 C 6 C 7 C 0 1 C 0 C 3 C 2 C 5 C 4 C 7 C 6 0 1 0 2 C 3 C 4 C 5 C 6 C 7 C 0 C 1 2 C 3 C 0 C 1 C 6 C 7 C 4 C 5 0 1 1 3 C 4 C 5 C 6 C 7 C 0 C 1 C 2 3 C 2 C 1 C 0 C 7 C 6 C 5 C 4 1 0 0 4 C 5 C 6 C 7 C 0 C 1 C 2 C 3 4 C 5 C 6 C 7 C 0 C 1 C 2 C 3 1 0 1 5 C 6 C 7 C 0 C 1 C 2 C 3 C 4 5 C 4 C 7 C 6 C 1 C 0 C 3 C 2 1 1 0 6 C 7 C 0 C 1 C 2 C 3 C 4 C 5 6 C 7 C 4 C 5 C 2 C 3 C 0 C 1 1 1 1 7 C 0 C 1 C 2 C 3 C 4 C 5 C 6 7 C 6 C 5 C 4 C 3 C 2 C 1 C 0
18 mb81f641642c-102/-103/-102l/-103l precharge and precharge option (pre, pall) sdram memory core is the same as conventional drams, requiring precharge and refresh operations. precharge rewrites the bit line and to reset the internal row address line and is executed by the precharge command (pre). with the precharge command, sdram will automatically be in standby state after precharge time (t rp ). the precharged bank is selected by combination of ap and a 13 , a 12 when precharge command is asserted. if ap = high, all banks are precharged regardless of a 13 , a 12 (pall). if ap = low, a bank to be selected by a 13 , a 12 is precharged (pre). the auto-precharge enters precharge mode at the end of burst mode of read or write without precharge command assertion. this auto precharge is entered by ap = high when a read or write command is asserted. refer to functional truth table. auto-refresh (ref) auto-refresh uses the internal refresh address counter. the sdram auto-refresh command (ref) generates precharge command internally. all banks of sdram should be precharged prior to the auto-refresh command. the auto-refresh command should also be asserted every 16 m s or a total 4096 refresh commands within a 65.6 ms period. self-refresh entry (self) self-refresh function provides automatic refresh by an internal timer as well as auto-refresh and will continue the refresh function until cancelled by selfx. the self-refresh is entered by applying an auto-refresh command in conjunction with cke = low (self). once sdram enters the self-refresh mode, all inputs except for cke will be dont care (either logic high or low level state) and outputs will be in a high-z state. during a self-refresh mode, cke = low should be maintained. self command should only be issued after last read data has been appeared on dq. note: when the burst refresh method is used, a total of 4096 auto-refresh commands within 4 ms must be asserted prior to the self-refresh mode entry. self-refresh exit (selfx) to exit self-refresh mode, apply minimum t pde after cke brought high, and then the nop command (nop) or the deselect command (desl) should be asserted within one t rc period. cke should be held high within one t rc period after t pde . refer to timing diagram for the detail. it is recommended to assert an auto-refresh command just after the t rc period to avoid the violation of refresh period. note: when the burst refresh method is used, a total of 4096 auto-refresh commands within 4 ms must be asserted after the self-refresh exit. mode register set (mrs) the mode register of sdram provides a variety of different operations. the register consists of four operation fields; burst length, burst type, cas latency, and operation code. refer to mode register table in page 33. the mode register can be programmed by the mode register set command (mrs). each field is set by the address line. once a mode register is programmed, the contents of the register will be held until re-programmed by another mrs command (or part loses power). mrs command should only be issued on condition that all dq is in hi-z. the condition of the mode register is undefined after the power-up stage. it is required to set each field after initialization of sdram. refer to power-up initialization below.
19 mb81f641642c-102/-103/-102l/-103l power-up initialization the sdram internal condition after power-up will be undefined. it is required to follow the following power on sequence to execute read or write operation. 1. apply power and start clock. attempt to maintain either nop or desl command at the input. 2. maintain stable power, stable clock, and nop condition for a minimum of 200 m s. 3. precharge all banks by precharge (pre) or precharge all command (pall). 4. assert minimum of 8 auto-refresh command (ref). 5. program the mode register by mode register set command (mrs). in addition, it is recommended dqm and cke to track v cc to insure that output is high-z state. the mode register set command (mrs) can be set before 8 auto-refresh command (ref).
20 mb81f641642c-102/-103/-102l/-103l cas latency = 1 ras cas dq clk cs dq t si ras cas cke we burst length = 4 active read/write precharge address hh h t hi h : read l : write ba * ra ba * ca ba * ap (a 10 ) row adress select column address select precharge fig. 2 C basic timing for conventional dram vs synchronous dynamic ram * : ba = ba 1 (a 12 ) and ba 0 (a 13 )
21 mb81f641642c-102/-103/-102l/-103l minimum clock latency or delay time for 1 bank operation notes: *1. assume no i/o conflict. *2. if t rp t ck , minimum latency is a sum of bl + cl. *3. assume output is in high-z state. *4. assume t ras is satisfied. illegal command second command (same bank) first command mrs t rsc t rsc t rsc t rsc t rsc t rsc actv t rcd *4 t rcd t rcd *4 t rcd t ras t ras read 11 *1 4 *1 411 reada *2 bl + t rp *2 bl + t rp *2 bl + t rp *2 bl + t rp writ t wr t wr 11t dpl t dpl writa t dal t dal t dal t dal pre *3 t rp *3 t rp t rp t rp *3 t rp *3 t rp pall *3 t rp *3 t rp t rp t rp *3 t rp *3 t rp ref t rc t rc t rc t rc t rc t rc selfx t rc t rc t rc t rc mrs actv read reada writ writa pre pall ref self
22 mb81f641642c-102/-103/-102l/-103l minimum clock latency or delay time for multi bank operation notes: *1. assume other banks is in idle state. *2. assume other banks is in active state. *3. assume no i/o conflict. *4. if t rp t ck , minimum latency is a sum of bl + cl. *5. assume pall command dose not affect any operation on other banks. *6. assume output is in high-z sate. *7. assume t ras of other banks is satisfied. *8. assume t ras (actv to pall) is satisfied. *9. if other banks should be interrupted, t ras of own bank is satisfied. illegal command second command (other bank) first command mrs t rsc t rsc t rsc t rsc t rsc t rsc actv *1 t rrd *2 1 *2 1 *2 1 *2 1 *7 1 *2 t ras read *1 1 *2 1 *2 1 *2 *3 4 *2 *3 4 *7 1 *8 1 *9 reada *1 *4 bl+ t rp *1 1 *2 1 *2 1 *2 *3 4 *2 *3 4 1 *1 *4 bl+ t rp *1 *4 bl+ t rp writ *1 1 *2 1 *2 1 *2 1 *2 1 *7 1 *8 1 *9 writa *1 *4 bl+ t rp *1 1 *2 1 *2 1 *2 1 *2 1 1 *1 bl+ t rp *1 bl+ t rp pre *1 t rp *1 1 *2 1 *2 1 *2 1 *2 11 *2 t ras *1 t rp *1 t rp *5 pall t rp t rp 11 *1 *6 t rp *1 *6 t rp ref t rc t rc t rc t rc t rc t rc selfx t rc t rc t rc t rc mrs actv read reada writ writa pre pall ref self
23 mb81f641642c-102/-103/-102l/-103l mode register set self refresh idle read suspend bank active auto refresh power down bank active suspend fig. 3 C state diagram (simplified for single bank operation state diagram) write write suspend power on precharge read write with auto precharge read with auto precharge writ read read writ bst bst mrs self selfx ref actv cke cke\ cke cke\ cke read writ reada writa reada cke\ cke writa pre or pall pre or pa l l power applied definition of allows manual input automatic sequence writa reada pre or pa l l pre or pa l l cke\(pd) read suspend cke\ cke write suspend cke\ cke
24 mb81f641642c-102/-103/-102l/-103l n absolute maximum ratings (see warning) warning: semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. do not exceed these ratings. n recommended operating conditions (referenced to v ss ) notes: *1. overshoot limit: v ih (max) = v cc +1.5 v with a pulsewidth 5 ns. *2. undershoot limit: v il (min) = C1.5 v with a pulsewidth 5 ns. warning: recommended operating conditions are normal operating ranges for the semiconductor device. all the devices electrical characteristics are warranted when operated within these ranges. always use semiconductor devices within the recommended operating conditions. operation outside these ranges may adversely affect reliability and could result in device failure. no warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. users considering application outside the listed conditions are advised to contact their fujitsu representative beforehand. n capacitance (t a = 25 c, f = 1 mhz) parameter symbol value unit voltage of v cc supply relative to v ss v cc , v ccq C0.5 to +4.6 v voltage at any pin relative to v ss v in , v out C0.5 to +4.6 v short circuit output current i out C50 to +50 ma power dissipation p d 1.0 w storage temperature t stg C55 to +125 c parameter notes symbol min. typ. max. unit supply voltage v cc , v ccq 3.0 3.3 3.6 v v ss , v ssq 000v input high voltage *1 v ih 2.0 v cc + 0.5 v input low voltage *2 v il C0.5 0.8 v ambient temperature t a 0+70 c parameter symbol min. typ. max. unit input capacitance, except for clk c in1 2.5 5.0 pf input capacitance for clk c in2 2.5 4.0 pf i/o capacitance c i/o 4.0 6.5 pf
25 mb81f641642c-102/-103/-102l/-103l n dc characteristics (at recommended operating conditions unless otherwise noted.) notes 1, 2 (continued) parameter symbol condition value unit min. max. output high voltage v oh(dc) i oh = C2 ma 2.4 v output low voltage v ol(dc) i ol = 2 ma 0.4 v input leakage current (any input) i li 0 v v in v cc ; all other pins not under test = 0 v C10 10 m a output leakage current i lo 0 v v in v cc ; data out disabled C10 10 m a operating current (average power supply current) mb81f641642c -102/102l/-103/103l i cc1s burst: length = 4 t rc = min for bl = 4 t ck = min one bank active outputs open addresses changed up to 3-times during t rc (min) 0 v v in v cc 105 ma mb81f641642c -102/-102l/-103/103l i cc1d burst: length = 4 (each bank) t rc = min for bl = 4 (each bank) t ck = min 2 banks active outputs open addresses changed up to 3-times during t rc (min) 0 v v in v cc 190 ma precharge standby current (power supply current) mb81f641642c -102/103 i cc2p cke = v il all banks idle t ck = min power down mode 0 v v in v cc 2 ma mb81f641642c -102l/103l 1 mb81f641642c -102/-103 i cc2ps cke = v il all banks idle clk = h or l power down mode 0 v v in v cc 1 ma mb81f641642c -102l/103l 0.5 i cc2n cke = v ih all banks idle, t ck = min nop commands only, input signals (except to cmd) are changed one time during 3 clock cycles 0 v v in v cc 15ma i cc2ns cke = v ih all banks idle clk = h or l input signal are stable 0 v v in v cc 2ma
26 mb81f641642c-102/-103/-102l/-103l (continued) parameter symbol condition value unit min. max. active standby current (power supply current) mb81f641642c -102/-103 i cc3p cke = v il any bank active t ck = min 0 v v in v cc 2 ma mb81f641642c -102l/103l 1 mb81f641642c -102/-103 i cc3ps cke = v il any bank active clk = h or l 0 v v in v cc 1 ma mb81f641642c -102l/103l 0.5 i cc3n cke = v ih any bank active t ck = min nop commands only, input signals (except to cmd) are changed one time during 3 clock cycles 0 v v in v cc 25ma i cc3ns cke = v ih any bank active clk = h or l 0 v v in v cc 2ma burst mode current (average power supply current) i cc4 t ck = min burst length = 4 outputs open multiple-banks active gapless data 0 v v in v cc 85ma refresh current #1 (average power supply current) i cc5 auto-refresh; t ck = min t rc = min 0 v v in v cc 240 ma refresh current #2 (average power supply current) mb81f641642c -102/103 i cc6 self-refresh; t ck = min cke 0.2 v 0 v v in v cc 1 ma mb81f641642c -102l/103l 0.5
27 mb81f641642c-102/-103/-102l/-103l n ac characteristics (at recommended operating conditions unless otherwise noted.) notes 2, 3, 4 parameter notes symbol mb81f641642c-102/-102l mb81f641642c-103/-103l unit min. max. min. max. clock period cl = 2 t ck2 10 15 ns cl = 3 t ck3 10 10 ns clock high time t ch 33ns clock low time t cl 33ns input setup time t si 22ns input hold time t hi 11ns access time from clock (t ck = min) *5, 6 cl = 2 t ac2 6 8ns cl = 3 t ac3 66ns output in low-z *7 t lz 00ns output in high-z *7 cl = 2 t hz2 3 6 3 8ns cl = 3 t hz3 66ns output hold time *7 t oh 33ns time between refresh t ref 65.6 65.6 ms transition time t t 0.5 2 0.5 2 ns cke setup time for power down exit time t cksp 33ns
28 mb81f641642c-102/-103/-102l/-103l base values for clock count/latency clock count formula note 13 parameter notes symbol mb81f641642c-102/-102l mb81f641642c-103/-103l unit min. max. min. max. ras cycle time *8 t rc 70 70 ns ras precharge time t rp 20 20 ns ras active time t ras 50 110000 50 110000 ns ras to cas delay time *9 t rcd 20 20 ns write recovery time t wr 10 10 ns ras to ras bank active delay time t rrd 20 20 ns data-in to precharge lead time t dpl 10 10 ns data-in to active/refresh command period cl=2 t dal2 1 cyc + t rp 1 cyc + t rp ns cl=3 t dal3 2 cyc + t rp 2 cyc + t rp ns mode resister set cycle time t rsc 20 20 ns clock 3 (round off a whole number) base value clock period
29 mb81f641642c-102/-103/-102l/-103l latency - fixed values (the latency values on these parameters are fixed regardless of clock period.) notes: *1. i cc depends on the output termination or load conditions, clock cycle rate, signal clocking rate; the specified values are obtained with the output open and no termination register. *2. an initial pause (desl or nop) of 200 m s is required after power-up followed by a minimum of eight auto-refresh cycles. *3. ac characteristics assume t t = 1 ns and 50 pf of capacitive load. *4. 1.4 v is the reference level for measuring timing of input signals. transition times are measured between v ih (min) and v il (max). (see fig. 5) *5. maximum value of cl = 2 depends on t ck . *6. t ac also specifies the access time at burst mode except for first access. *7. specified where output buffer is no longer driven. t oh , t lz , and t hz define the times at which the output level achieves 200 mv. *8. actual clock count of t rc (l rc ) will be sum of clock count of t ras (l ras ) and t rp (l rp ). *9. operation within the t rcd (min) ensures that access time is detetermined by t rcd (min) + t ac (max); if t rcd is greater than the specified t rcd (min), access time is determined by t ac . *10. all base values are measured from the clock edge at the command input to the clock edge for the next command input. all clock counts are calculated by a simple formula: clock count equals base value divided by clock period (round off to a whole number). parameter notes symbol mb81f641642c-102/-102l mb81f641642c-103/-103l unit cke to clock disable l cke 1 1 cycle dqm to output in high-z l dqz 2 2 cycle dqm to input data delay l dqd 0 0 cycle last output to write command delay l owd 2 2 cycle write command to input data delay l dwd 0 0 cycle precharge to output in high-z delay cl = 2 l roh2 2 2 cycle cl = 3 l roh3 3 3 cycle burst stop command to output in high-z delay cl = 2 l bsh2 2 2 cycle cl = 3 l bsh3 3 3 cycle cas to cas delay (min) l ccd 1 1 cycle cas bank delay (min) l cbd 1 1 cycle
30 mb81f641642c-102/-103/-102l/-103l output note: ac characteristics are measured in this condition. this load circuits are not applicable for v oh and v ol . fig. 4 C example of ac test load circuit r 1 = 50 w cl = 50 pf lvttl 1.4 v
31 mb81f641642c-102/-103/-102l/-103l t si t hi t ch t ck t ac t hz t oh t lz t cl clk input (control, addr. & data) output 2.0 v 1.4 v 0.8 v 1.4 v 2.0 v 0.8 v 1.4 v 2.4 v 0.4 v note: reference level of input signal is 1.4 v for lvttl. access time is measured at 1.4 v for lvttl. fig. 5 C timing diagram, setup, hold and delay time clk cke t cksp (min) nop dont care dont care command 1 clock (min) nop actv fig. 6 C timing diagram, delay time for power down exit
32 mb81f641642c-102/-103/-102l/-103l fig. 7 C timing diagram, pulse width command command clk input (control) note: this parameter is a limit value of the rising edge of the clock from one command input to next input. t pde is the latency value from the rising edge of cke. measurement reference voltage is 1.4 v. t rc , t rp , t ras , t rcd , t wr , t ref , t dpl , t dal , t rsc , t rrd , t cksp fig. 8 C timing diagram, access time t rac t cac t ac clk ras cas dq (output) t rcd q (valid) (cas latency C1) t ck note: t rac and t cac are reference values. data can be obtained after both t cac = (cl-1) t ck and t ac is satisfied.
33 mb81f641642c-102/-103/-102l/-103l n mode register table a 2 a 1 a 0 burst length 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 1 2 4 8 reserved reserved reserved full column 0 1 0 1 0 1 0 1 reserved 2 4 8 reserved reserved reserved reserved bt = 0 bt = 1 a 11 a 10 a 9 a 8 a 7 a 6 a 5 a 4 a 3 a 2 address op- code 00 cl bt bl mode register a 3 burst type sequential (wrap round, binary-up) interleave (wrap round, binary-up) 0 1 a 6 a 5 a 4 cas latency 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 mode register set a 9 op-code burst read & burst write burst read & single write 0 1 reserved reserved 2 3 reserved reserved reserved reserved notes: 1. when a 9 = 1, burst length at write is always one regardless of bl value. 2. bl = 1 and full column are not applicable to the interleave mode. a 1 a 0 xx a 13 a 12 xx
34 mb81f641642c-102/-103/-102l/-103l timing diagram C 1 : clock enable - read and write suspend (@ bl = 4) q1 q2 (no change) q3 (no change) q4 d1 not written d2 not written d3 d4 clk cke clk (internal) dq (read) dq (write) notes: *1. the latency of cke (l cke ) is one clock. *2. during read mode, burst counter will not be incremented/decremented at the next clock of csus command. output remain the same data. *3. during the write mode, data at the next clock of csus command is ignored. *1 *3 *3 *1 *2 *2 *2 *2 i cke (1 clock) i cke (1 clock) timing diagram C 2 : clock enable - power down entry and exit nop pd(nop) dont care nop actv clk cke command 1 clock (min) *1 *2 *3 nop *3 notes: *1. precharge command (pre or pall) should be asserted if any bank is active and in the burst mode. *2. precharge command can be posted in conjunction with cke after the last read data have been appeared on dq. *3. the actv command can be latched after t cksp (min) + 1 clock (min). it is recommended to apply nop command in conjunction with cke. t cksp t ref (max)
35 mb81f641642c-102/-103/-102l/-103l timing diagram C 3 : column address to column address input delay clk ras cas row address column address address i ccd (1 clock) t rcd (min) note: cas to cas address delay can be one or more clock period. i ccd i ccd i ccd column address column address column address column address timing diagram C 4 : different bank address input delay t rcd (min) t rrd (min) clk ras cas row address address bank 0 bank 1 bank 1 bank 1 bank 0 bank 0 ba t rcd (min) i cbd i cbd column address row address column address column address column address
36 mb81f641642c-102/-103/-102l/-103l timing diagram C 5 : dqmu, dqml - input mask and output disable (@ bl = 4) clk dqml, dqmu (@ read) dq (@ read) dqml, dqmu (@ write) dq (@ write) q1 q2 hi-z q4 end of burst d1 masked d3 d4 end of burst i dqz (2 clocks) i dqd (same clock) timing diagram C 6 : precharge timing (applied to the same bank) t ras (min) clk command actv precharge
37 mb81f641642c-102/-103/-102l/-103l timing diagram C 7 : read interrupted by precharge (example @ cl = 2, bl = 4) clk command dq command dq command dq command dq hi-z q1 precharge q1 q2 q1 q2 q3 q1 q2 q3 q4 hi-z hi-z no effect (end of burst) note: in case of cl = 2, the l roh is 2 clock. in case of cl = 3, the l roh is 3 clock. i roh (2 clocks) i roh (2 clocks) i roh (2 clocks) precharge precharge precharge
38 mb81f641642c-102/-103/-102l/-103l timing diagram C 8 : read interrupted by burst stop (example @ bl = full column) clk command (cl = 2) dq command (cl = 3) dq q n q n+1 hi-z hi-z q n+2 q n-1 q n-2 q n q n+1 q nC1 q nC2 l bsh (2 clocks) l bsh (3 clocks) bst bst timing diagram C 9 : write interrupted by burst stop (example @ cl = 2) clk command dq last data-in masked by bst bst command
39 mb81f641642c-102/-103/-102l/-103l timing diagram C 10 : write interrupted by precharge (example @ cl = 3) t rp (min) t dpl (min) clk command dq active data-in last data-in masked by pre note: the precharge command (pre) should only be issued after the t dpl of final data input, is satisfied. precharge timing diagram C 11 : read interrupted by write (example @ cl = 3, bl = 4) clk command dqm (dqml, dqmu) dq data out masked data in data in note 1 note 2 note 3 write notes: 1. first dqm makes high-impedance state high-z between last output and first input data. 2. second dqm makes internal output data mask to avoid bus contention. 3. third dqm in illustrated above also makes internal output data mask. if burst read ends (final data output) at or after the second clock of burst write, this third dqm is required to avoid internal bus contention. i dwd (same clock) i owd (2 clocks) i dqz (2 clocks) read
40 mb81f641642c-102/-103/-102l/-103l timing diagram C 12 : write to read timing (example @ cl = 3, bl = 4) clk command dq dqm (dqml, dqmu) note: read command should be issued after t wr of final data input is satisfied if read command is applied to the same bank. write read d1 q1 q2 d3 masked by read t wr (min) d2 (cl-1) t ck t ac (max)
41 mb81f641642c-102/-103/-102l/-103l reada actv nop or desl actv q1 q2 t ras (min) 2 clocks (same value as bl) t rp (min) timing diagram C 13 : read with auto-precharge (exaple @ cl = 2, bl = 2 applied to same bank) clk command dq notes: *1. precharge at read with auto-precharge command (reada) is started from number of clocks that is the same as burst length (bl) after the reada command is asserted. *2. next actv command should be issued after bl+t rp (min) from reada command. bl+t rp (min) *1 *2 dqm (dqml, dqmu) writa actv actv d1 d2 t dal (min) timing diagram C 14 : write with auto-precharge (example @ cl = 2, bl = 2 applied to same bank) clk command dqm (dqml, dqmu) dq nop or desl notes: *1. precharge at write with auto-precharge is started after the t dpl from the end of burst. *2. even if the final data is masked by dqm, the precharge does not start the clock of final data input. *3. once auto precharge command is asserted, no new command within the same bank can be issued. *4. auto-precharge command doesnt affect at full column burst operation except burst read & single write. *5. next command should be issued after bl+ t rp (min) at cl = 2, bl+1+t rp (min) at cl = 3 from writa command. t ras (min) bl+t rp (min) t dpl (min) *1 *5
42 mb81f641642c-102/-103/-102l/-103l timing diagram C 15 : auto-refresh timing t rc (min) t rc (min) clk command ba ref command nop ba *1 nop nop ref nop *4 dont care notes: *1. all banks should be precharged prior to the first auto-refresh command (ref). *2. bank select is ignored at ref command. the refresh address and bank select are selected by internal refresh counter. *3. either nop or desl command should be asserted during t rc period while auto-refresh mode. *4. any activation command such as actv or mrs command other than ref command should be asserted after t rc from the last ref comand. *3 dont care timing diagram C 16 : self-refresh entry and exit timing t rc (min) t cksp (min) clk cke command nop notes: *1. precharge command (pre or pall) should be asserted if any bank is active prior to self-refresh entry command (self). *2. self command should be asserted after the last read data have been appeared on dq. *3. the self-refresh exit command (selfx) is latched after t cksp (min). it is recommended to apply nop command in conjunction with cke. *4. either nop or desl command can be used during t rc period. *5. cke should be held high within one t rc period after t cksp . self dont care selfx command nop *3 nop *4 *1 t si (min) *2 *5
43 mb81f641642c-102/-103/-102l/-103l timing diagram C 17 : mode register set timing clk command address mrs nop or desl mode row adress actv notes: 1. the mode register set command (mrs) should only be asserted after all banks have been precharged. 2. the mrs command should only be asserted on condition that dq is in high-z. t rsc
44 mb81f641642c-102/-103/-102l/-103l n package dimension c 1997 fujitsu limited f54003s-1c-1 54 28 1 27 "a" index 22.220.10 (.875.004) m 0.16(.006) * 20.80(.819)ref 0.80(.0315) typ 0.10(.004) 0.05(.002)min (stand off) 0.500.10 (.020.004) 10.760.20 (.424.008) 11.760.20 (.463.008) 10.160.10 (.400.004) 0.1250.05 (.005.002) details of "a" part 0.25(.010) 0.15(.006) max 0.40(.016) max 0.15(.006) lead no. 1.150.05 (.045.002) .013 ?.003 +.003 ?0.07 +0.08 0.32 (mounting height) dimensions in mm (inches) 54-pin plastictsop(ii) (fpt-54p-m02) *: resin protrusion. (each side: 0.15 (.006) max)
45 mb81f641642c-102/-103/-102l/-103l fujitsu limited for further information please contact: japan fujitsu limited corporate global business support division electronic devices kawasaki plant, 4-1-1, kamikodanaka nakahara-ku, kawasaki-shi kanagawa 211-8588, japan tel: (044) 754-3763 fax: (044) 754-3329 http://www.fujitsu.co.jp/ north and south america fujitsu microelectronics, inc. semiconductor division 3545 north first street san jose, ca 95134-1804, usa tel: (408) 922-9000 fax: (408) 922-9179 customer response center mon. - fri.: 7 am - 5 pm (pst) tel: (800) 866-8608 fax: (408) 922-9179 http://www.fujitsumicro.com/ europe fujitsu mikroelektronik gmbh am siebenstein 6-10 d-63303 dreieich-buchschlag germany tel: (06103) 690-0 fax: (06103) 690-122 http://www.fujitsu-ede.com/ asia pacific fujitsu microelectronics asia pte ltd #05-08, 151 lorong chuan new tech park singapore 556741 tel: (65) 281-0770 fax: (65) 281-0220 http://www.fmap.com.sg/ f9802 ? fujitsu limited printed in japan all rights reserved. the contents of this document are subject to change without notice. customers are advised to consult with fujitsu sales representatives before ordering. the information and circuit diagrams in this document presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. also, fujitsu is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. fujitsu semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.). caution: customers considering the use of our products in special applications where failure or abnormal operation may directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with fujitsu sales representatives before such use. the company will not be responsible for damages arising from such use without prior approval. any semiconductor devices have inherently a certain rate of failure. you must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. if any products described in this document represent goods or technologies subject to certain restrictions on export under the foreign exchange and foreign trade control law of japan, the prior authorization by japanese government should be required for export of those products from japan.

▲Up To Search▲

Price & Availability of MB81F641642C-103FN

	To Download MB81F641642C-103FN Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .