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6 pin dip phototransistor photocoupler everlight electronics co., ltd. 1 http:\\www.everlight.com document no dpc-717-044 rev. 0 september 12, 2007 4n2x series 4n3x series h11ax series features: ? 4n2x series: 4n25, 4n26, 4n27, 4n28 ? 4n3x series: 4n35, 4n36, 4n37, 4n38 ? h11ax series: h11a1, h11a 2, h11a3, h11a4, h11a5 ? high isolation voltage between input and output (viso=5000 v rms) ? creepage distance >7.62 mm ? operating temperature up to +110c ? compact dual-in-line package ? pb free and rohs compliant. ? ul approved (no. e214129) ? vde approved (no. 132249) ? semko approval pending ? nemko approval pending ? demko approval pending ? fimko approval pending ? csa approval pending description the 4n2x, 4n3x, h11ax seri es contains an infrared emitting diode optically coupled to a photot ransistor. it is packaged in a 6-pin dip package and available in wide-lead spacing and smd option. applications ? power supply regulators ? digital logic inputs ? microprocessor inputs 1. anode 2. cathode 3. no connection 4. emitter 5. collector 6. base schematic
6 pin dip phototransistor photocoupler everlight electronics co., ltd. 2 http:\\www.everlight.com document no dpc-717-044 rev. 0 september 12, 2007 4n2x series 4n3x series h11ax series absolute maximum ratings (t a =25c) parameter symbol rating unit forward current i f 50 ma peak forward current (t = 10s) i fm 1 a reverse voltage v r 6 v 70 mw input power dissipation (t a = 25c) derating factor (above 100c) p d 3.8 mw/c collector-emitter voltage v ceo 80 v collector-base voltage v cbo 80 v emitter-collector voltage v eco 7 v output emitter-base voltage v ebo 7 v 150 mw power dissipation (t a = 25c) derating factor (above 100c) p c 9.0 mw/c total power dissipation p tot 200 mw isolation voltage *1 v iso 5000 vrms operating temperature t opr -55~+110 c storage temperature t stg -55~+125 c soldering temperature *2 t sol 260 c notes *1 ac for 1 minute, r.h.= 40 ~ 60% r.h. in this test, pins 1, 2 & 3 are shorted together, and pins 4, 5 & 6 are shorted together. *2 for 10 seconds.
6 pin dip phototransistor photocoupler everlight electronics co., ltd. 3 http:\\www.everlight.com document no dpc-717-044 rev. 0 september 12, 2007 4n2x series 4n3x series h11ax series electrical characteristics (t a =25c unless specified otherwise) input parameter symbol min. typ.* max. unit condition forward voltage v f - 1.2 1.5 v i f = 10ma reverse current i r - - 10 a v r = 6v input capacitance c in - 30 - pf v = 0, f = 1mhz output parameter symbol min. typ.* max. unit condition collector-base dark current i cbo - - 20 na v cb = 10v - - 50 v ce = 10v, if=0ma collector-emitter dark current i ceo - - 50 na v ce = 60v, if=0ma collector-emitter breakdown voltage bv ceo 80 - - v i c =1ma collector-base breakdown voltage bv cbo 80 - v i c =0.1ma emitter-collector breakdown voltage bv eco 7 - - v i e =0.1ma emitter-base breakdown voltage bv ebo 7 - - v i e =0.1ma collector-emitter capacitance c ce - 8 - pf vce=0v, f=1mhz * typical values at t a = 25c
6 pin dip phototransistor photocoupler everlight electronics co., ltd. 4 http:\\www.everlight.com document no dpc-717-044 rev. 0 september 12, 2007 4n2x series 4n3x series h11ax series transfer characteristics (t a =25c unless specified otherwise) parameter symbol min. typ.* max. unit condition 4n35, 4n36, 4n37 100 - - h11a1 50 - - h11a5 30 - - 4n25, 4n26, 4n38, h11a2, h11a3 20 - - current transfer ratio 4n27, 4n28, h11a4 ctr 10 - - % i f = 10ma, v ce = 10v 4n25, 4n26, 4n27, 4n28 - - 0.5 i f = 50ma, i c = 2ma 4n35, 4n36, 4n37 - - 0.3 h11a1, h11a2, h11a3, h11a4, h11a5 - - 0.4 i f = 10ma, i c = 0.5ma collector-emitter saturation voltage 4n38 v ce(sat) - - 1.0 v i f = 20ma, i c = 4ma isolation resistance r io 10 11 - - v io = 500vdc input-output capacitance c io - 0.2 - pf v io = 0, f = 1mhz 4n25, 4n26, 4n27, 4n28, h11a1, h11a2, h11a3, h11a4, h11a5 - 3 10 v cc = 10v, i f = 10ma, r l = 100 see fig. 11 turn-on time 4n35, 4n36, 4n37, 4n38 ton - 10 12 s v cc = 10v, i c = 2ma, r l = 100 , see fig. 11 4n25, 4n26, 4n27, 4n28, h11a1, h11a2, h11a3, h11a4 - 3 10 v cc = 10v, i f = 10ma, r l = 100 see fig. 11 turn-off time 4n35, 4n36, 4n37, 4n38 toff - 9 12 s v cc = 10v, i c = 2ma, r l = 100 , see fig. 11 * typical values at t a = 25c
6 pin dip phototransistor photocoupler everlight electronics co., ltd. 5 http:\\www.everlight.com document no dpc-717-044 rev. 0 september 12, 2007 4n2x series 4n3x series h11ax series typical performance curves
6 pin dip phototransistor photocoupler everlight electronics co., ltd. 6 http:\\www.everlight.com document no dpc-717-044 rev. 0 september 12, 2007 4n2x series 4n3x series h11ax series figure 11. switching time test circuit & waveforms i f i c r l r in r be v cc output input input pulse output pulse 10% 90% t f t r t of f t on
6 pin dip phototransistor photocoupler everlight electronics co., ltd. 7 http:\\www.everlight.com document no dpc-717-044 rev. 0 september 12, 2007 4n2x series 4n3x series h11ax series order information part number 4nxxy(z)-v or h11axy(z)-v note xx = part no. for 4nxx series (25, 26, 27, 28, 35, 36, 37 or 38) x = part no. for h11ax series (1, 2, 3, 4, or 5) y = lead form option (s, s1, m or none) z = tape and reel option (ta, tb or none). v = vde (optional) option description packing quantity none standard dip-6 65 units per tube m wide lead bend (0.4 inch spacing) 65 units per tube s (ta) surface mount lead form + ta tape & reel option 1000 units per reel s (tb) surface mount lead form + tb tape & reel option 1000 units per reel s1 (ta) surface mount lead form (low profile ) + ta tape & reel option 1000 units per reel s1 (tb) surface mount lead form (low profile ) + tb tape & reel option 1000 units per reel
6 pin dip phototransistor photocoupler everlight electronics co., ltd. 8 http:\\www.everlight.com document no dpc-717-044 rev. 0 september 12, 2007 4n2x series 4n3x series h11ax series package drawings (dimensions in mm) standard dip type option m type
6 pin dip phototransistor photocoupler everlight electronics co., ltd. 9 http:\\www.everlight.com document no dpc-717-044 rev. 0 september 12, 2007 4n2x series 4n3x series h11ax series option s type option s1 type
6 pin dip phototransistor photocoupler everlight electronics co., ltd. 10 http:\\www.everlight.com document no dpc-717-044 rev. 0 september 12, 2007 4n2x series 4n3x series h11ax series recommended pad layout for suface mount leadfrom device marking notes el denotes everlight 4n35 denotes device number y denotes 1 digit year code ww denotes 2 digit week code v denotes vde (optional) el 4n35 yw w v
6 pin dip phototransistor photocoupler everlight electronics co., ltd. 11 http:\\www.everlight.com document no dpc-717-044 rev. 0 september 12, 2007 4n2x series 4n3x series h11ax series tape & reel packing specifications tape dimensions dimension no. a b do d1 e f dimension (mm) 10.40.1 7.520.1 1.50.1 1. 5+0.1/-0 1.750.1 7.50.1 dimension no. po p1 p2 t w k dimension (mm) 4.00.15 16.00.1 2.00.1 0.350.03 16.00.2 4.50.1 option ta option tb direction of feed from reel direction of feed from reel
6 pin dip phototransistor photocoupler everlight electronics co., ltd. 12 http:\\www.everlight.com document no dpc-717-044 rev. 0 september 12, 2007 4n2x series 4n3x series h11ax series solder reflow temperature profile
6 pin dip phototransistor photocoupler everlight electronics co., ltd. 13 http:\\www.everlight.com document no dpc-717-044 rev. 0 september 12, 2007 4n2x series 4n3x series h11ax series disclaimer 1. above specification may be c hanged without notice. everlight will re serve authority on material change for above specification. 2. when using this product, please obs erve the absolute maximum ratings and the instructions for use as outlined in these specification sheets. everlight assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets. 3. these specification sheets include materials pr otected under copyright of everlight corporation. please do not reproduce or cause anyone to r eproduce them without everlight?s consent.

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