sb2h90 & sb2h100 document number 88718 23-dec-05 www.vishay.com 1 do-204ac (do-15) vishay general semiconductor new product high-voltage schottky rectifier high barrier technol ogy for improved high temperature performance major ratings and characteristics i f(av) 2.0 a v rrm 90 v, 100 v i fsm 75 a v f 0.65 v i r 10 a t j max. 175 c features ? guardring for overvoltage protection ? low power losses and high efficiency ? low forward voltage drop ? low leakage current ? high forward surge capability ? high frequency operation ? meets msl level 1, per j-std-020c typical applications for use in middle voltage high frequency inverters, free wheeling, dc-to-dc converters and polarity pro- tection applications. mechanical data case: do-204ac (do-15) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade polarity: color band denotes the cathode end maximum ratings t a = 25 c unless otherwise specified parameter symbol sb2h90 sb2h100 unit maximum repetitive peak reverse voltage v rrm 90 100 v working peak reverse voltage v rwm 90 100 v maximum dc blocking voltage v dc 90 100 v maximum average forward rectified current at t a = 25 c i f(av) 2.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 75 a peak repetitive reverse surge current at t p = 2.0 s, 1 khz i rrm 1.0 a critical rate of rise of reverse voltage dv/dt 10000 v/s storage temperature range t stg - 55 to + 175 c maximum operating junction temperature t j 175 c
www.vishay.com 2 document number 88718 23-dec-05 sb2h90 & sb2h100 vishay semiconductors electrical characteristics t a = 25 c unless otherwise specified notes: (1) pulse test: 300 ms pulse width, 1 % duty cycle thermal characteristics t a = 25 c unless otherwise specified notes: (1) p.c.b. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas ratings and characteristics curves (t a = 25 c unless otherwise specified) parameter test condition symbols sb2h90 sb2h100 unit maximum instantaneous forward voltage (1) i f = 2.0 a, i f = 2.0 a, t j = 25 c t j = 125 c v f 0.79 0.65 v maximum dc reverse current at rated dc blocking voltage (1) t j = 25 c t j = 125 c i r 10 4.0 a ma parameter symbol sb2h90 sb2h100 unit typical thermal resistance (1) r ja r jl 45 14 c/w figure 1. forward current derating curve 0 3.0 4.0 050 25 75 100 125 150 175 a v erage for w ard c u rrent (a) am b ient temperat u re (c) 2.0 1.0 200 figure 2. typical instantaneous forward characteristics 0.2 0 0.4 0. 8 1.0 0.01 0.1 10 1 instantaneo u sfor w ard c u rrent (a) t j =25c instantaneo u sfor w ard v oltage ( v ) 1.2 t j = 150 c 0.6 1.4 100 t j = 175 c t j = 100 c t j = 125 c
sb2h90 & sb2h100 document number 88718 23-dec-05 vishay semiconductors www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical reve rse characteristics figure 4. typical j unction capacitance 20 60 40 100 8 0 instantaneo u sre v erse c u rrent ( a) percent of rated peak re v erse v oltage ( % ) t j =25c 0.1 0.01 1 10000 100 t j = 100 c t j = 125 c 10 1000 t j = 150 c re v erse v oltage ( v ) j u nction capacitance (pf) 0.1 1 10 100 100 1000 10 10000 figure 5. typical trans ient thermal impedance 0.01 110 100 10 100 0.1 1 t- p u lse d u ration (sec.) transient thermal impedance (c/ w ) 0.034 (0. 8 6) 0.02 8 (0.71) dia. 0.140 (3.6) 0.104 (2.6) dia. 0.230 (5. 8 ) 0.300 (7.6) 1.0 (25.4) min. 1.0 (25.4) min. do-204ac (do-15)
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