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buk7735-55a n-channel trenchmos? standard level fet rev. 02 7 june 2004 product data m3d308 1. description n-channel enhancement mode ?eld-effect power transistor in a plastic package using trenchmos? 1 technology, featuring very low on-state resistance. product availability: buk7735-55a in sot186a (to-220f). 2. features n trenchmos? technology n q101 compliant n 150 c rated n standard level compatible. 3. applications n automotive and general purpose power switching: u 12 v and 24 v loads u motors, lamps and solenoids. 4. pinning information 1. trenchmos is a trademark of koninklijke philips electronics n.v. table 1: pinning - sot186a, simpli?ed outline and symbol pin description simpli?ed outline symbol 1 gate (g) sot186a (to-220f) 2 drain (d) 3 source (s) mb mounting base; isolated mbk110 1 mb 23 s d g mbb076
philips semiconductors buk7735-55a n-channel trenchmos? standard level fet product data rev. 02 7 june 2004 2 of 12 9397 750 13324 ? koninklijke philips electronics n.v. 2004. all rights reserved. 5. quick reference data 6. limiting values [1] i dm is limited by chip, not package. table 2: quick reference data symbol parameter conditions typ max unit v ds drain-source voltage (dc) - 55 v i d drain current (dc) t mb =25 c; v gs =10v - 20 a p tot total power dissipation t mb =25 c - 25 w t j junction temperature - 150 c r dson drain-source on-state resistance v gs = 10 v; i d =20a t j =25 c 2935m w t j = 150 c - 64 m w table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage (dc) - 55 v v dgr drain-gate voltage (dc) r gs =20k w -55v v gs gate-source voltage (dc) - 20 v i d drain current (dc) t mb =25 c; v gs =10v; figure 2 and 3 -20a t mb = 100 c; v gs =10v; figure 2 -14a i dm peak drain current t mb =25 c; pulsed; t p 10 m s; figure 3 [1] -79a p tot total power dissipation t mb =25 c; figure 1 -25w t stg storage temperature - 55 +150 c t j operating junction temperature - 55 +150 c source-drain diode i dr reverse drain current (dc) t mb =25 c - 20 a i drm peak reverse drain current t mb =25 c; pulsed; t p 10 m s - 79 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy unclamped inductive load; i d =20a; v ds 55 v; v gs = 10 v; r gs =50 w ; starting t j =25 c - 123 mj
philips semiconductors buk7735-55a n-channel trenchmos? standard level fet product data rev. 02 7 june 2004 3 of 12 9397 750 13324 ? koninklijke philips electronics n.v. 2004. all rights reserved. v gs 3 10 v fig 1. normalized total power dissipation as a function of mounting base temperature. fig 2. normalized continuous drain current as a function of mounting base temperature. t mb =25 c; i dm is single pulse. fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03ne36 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 p der t mb ( o c) (%) 03ne37 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 i der t mb ( o c) (%) p der p tot p tot 25 c () ---------------------- 100 % = i der i d i d25c () ------------------ - 100 % = 03ne04 10 -1 1 10 10 2 1 10 10 2 v ds (v) i d (a) d.c. 100 ms 10 ms r dson = v ds / i d 1 ms t p = 10 us 100 us t p t p t p t t d =
philips semiconductors buk7735-55a n-channel trenchmos? standard level fet product data rev. 02 7 june 2004 4 of 12 9397 750 13324 ? koninklijke philips electronics n.v. 2004. all rights reserved. 7. thermal characteristics 7.1 transient thermal impedance table 4: thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base figure 4 --5k/w r th(j-a) thermal resistance from junction to ambient vertical in still air - 55 - k/w fig 4. transient thermal impedance from junction to mounting base as a function of pulse duration. 03ne05 single shot 0.2 0.1 0.05 0.02 10 -2 10 -1 1 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 t p (s) z th(j-mb) (k/w) d = 0.5 t p t p t p t t d =
philips semiconductors buk7735-55a n-channel trenchmos? standard level fet product data rev. 02 7 june 2004 5 of 12 9397 750 13324 ? koninklijke philips electronics n.v. 2004. all rights reserved. 8. characteristics table 5: characteristics t j =25 c unless otherwise speci?ed symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = 0.25 ma; v gs =0v t j =25 c55--v t j = - 55 c50--v v gs(th) gate-source threshold voltage i d = 1 ma; v ds =v gs ; figure 9 t j =25 c234v t j = 150 c 1.2 - - v t j = - 55 c - - 4.4 v i dss drain-source leakage current v ds = 55 v; v gs =0v t j =25 c - 0.05 10 m a t j = 150 c - - 500 m a i gss gate-source leakage current v gs = 20 v; v ds = 0 v - 2 100 na r dson drain-source on-state resistance v gs =10v; i d =20a; figure 7 and 8 t j =25 c - 29 35 m w t j = 150 c--64m w dynamic characteristics q g(tot) total gate charge v gs =10v; v dd =44v; i d =20a; figure 14 -19-nc q gs gate-to-source charge - 4 - nc q gd gate-to-drain (miller) charge - 9 - nc c iss input capacitance v gs =0v; v ds =25v; f = 1 mhz; figure 12 - 650 870 pf c oss output capacitance - 170 200 pf c rss reverse transfer capacitance - 110 150 pf t d(on) turn-on delay time v dd = 30 v; r l = 1.2 w ; v gs =5v; r g =10 w -10-ns t r rise time - 62 - ns t d(off) turn-off delay time - 24 - ns t f fall time - 20 - ns l d internal drain inductance from drain lead 6 mm from package to centre of die - 4.5 - nh l s internal source inductance from source lead 6 mm from package to source bond pad - 7.5 - nh source-drain diode v sd source-drain (diode forward) voltage i s = 15 a; v gs =0v; figure 15 - 0.85 1.2 v t rr reverse recovery time i s =20a;di s /dt = - 100 a/ m s v gs = - 10 v; v ds =30v -40-ns q r recovered charge - 80 - nc
philips semiconductors buk7735-55a n-channel trenchmos? standard level fet product data rev. 02 7 june 2004 6 of 12 9397 750 13324 ? koninklijke philips electronics n.v. 2004. all rights reserved. t j =25 ct j =25 c; i d =20a fig 5. output characteristics: drain current as a function of drain-source voltage; typical values. fig 6. drain-source on-state resistance as a function of gate-source voltage; typical values. t j =25 c fig 7. drain-source on-state resistance as a function of drain current; typical values. fig 8. normalized drain source on-state resistance factor as a function of junction temperature. 03nb81 0 20 40 60 80 100 120 0246810 v ds (v) i d (a) 4.5 5.5 6.5 7.5 8.5 9.5 20 18 16 14 12 10.5 11 v gs (v) = 03nb80 20 25 30 35 40 45 50 5101520 v gs (v) r dson (m w ) 03nb82 20 30 40 50 60 70 80 0 20406080100 i d (a) r dson (m w ) v gs (v) = 5.5 6 6.5 7 8 9 10 03nc24 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -60 -20 20 60 100 140 180 t j ( o c) a a r dson r dson 25 c () ---------------------------- =
philips semiconductors buk7735-55a n-channel trenchmos? standard level fet product data rev. 02 7 june 2004 7 of 12 9397 750 13324 ? koninklijke philips electronics n.v. 2004. all rights reserved. i d = 1 ma; v ds =v gs t j =25 c; v ds =v gs fig 9. gate-source threshold voltage as a function of junction temperature. fig 10. sub-threshold drain current as a function of gate-source voltage. t j =25 c; v ds =25v v gs = 0 v; f = 1 mhz fig 11. forward transconductance as a function of drain current; typical values. fig 12. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03aa32 0 1 2 3 4 5 -60 0 60 120 180 t j ( c) v gs(th) (v) max min typ 03aa35 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 0246 v gs (v) i d (a) max typ min 03nb78 0 2 4 6 8 10 12 14 16 0 1020304050 i d (a) g fs (s) 03nb83 0 500 1000 1500 2000 2500 10 -2 10 -1 1 10 10 2 v ds (v) c (pf) ciss coss crss
philips semiconductors buk7735-55a n-channel trenchmos? standard level fet product data rev. 02 7 june 2004 8 of 12 9397 750 13324 ? koninklijke philips electronics n.v. 2004. all rights reserved. v ds =25v tj=25 c; i d =20a fig 13. transfer characteristics: drain current as a function of gate-source voltage; typical values. fig 14. gate-source voltage as a function of gate charge; typical values. v gs =0v fig 15. source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 03ne14 0 10 20 30 40 50 0246810 v gs (v) i d (a) t j = 150 o c t j = 25 o c 03nb77 0 1 2 3 4 5 6 7 8 9 10 0102030 q g (nc) v gs (v) v dd = 44 v v dd = 14 v 03ne15 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 2.0 v sd (v) i s (a) t j = 150 o c t j = 25 o c
philips semiconductors buk7735-55a n-channel trenchmos? standard level fet product data rev. 02 7 june 2004 9 of 12 9397 750 13324 ? koninklijke philips electronics n.v. 2004. all rights reserved. 9. package outline fig 16. sot186a. references outline version european projection issue date iec jedec jeita sot186a 3-lead to-220f 0 5 10 mm scale plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead to-220 'full pack' sot186a a a 1 q c k j notes 1. terminal dimensions within this zone are uncontrolled. terminals in this zone are not tinned. 2. both recesses are ? 2.5 0.8 max. depth d d 1 l l 2 l 1 b 1 b 2 e 1 e b w m 1 23 q e p t unit d b 1 d 1 e q q p l c l 2 (1) max. e 1 a 5.08 3 mm 4.6 4.0 a 1 2.9 2.5 b 0.9 0.7 1.1 0.9 b 2 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 e 10.3 9.7 2.54 14.4 13.5 t (2) 2.5 0.4 l 1 3.30 2.79 j 2.7 1.7 k 0.6 0.4 2.6 2.3 3.0 2.6 w 3.2 3.0 dimensions (mm are the original dimensions) 02-03-12 02-04-09 mounting base
philips semiconductors buk7735-55a n-channel trenchmos? standard level fet product data rev. 02 7 june 2004 10 of 12 9397 750 13324 ? koninklijke philips electronics n.v. 2004. all rights reserved. 10. revision history table 6: revision history rev date cpcn description 02 20040607 - product data (9397 750 13324) modi?cations: ? latest version of package outline imported into data sheet. 01 20010215 - product speci?cation (9397 750 07998)
9397 750 13324 philips semiconductors buk7735-55a n-channel trenchmos? standard level fet ? koninklijke philips electronics n.v. 2004. all rights reserved. product data rev. 02 7 june 2004 11 of 12 9397 750 13324 philips semiconductors buk7735-55a n-channel trenchmos? standard level fet ? koninklijke philips electronics n.v. 2004. all rights reserved. product data rev. 02 7 june 2004 11 of 12 contact information for additional information, please visit http://www.semiconductors.philips.com . for sales of?ce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com . fax: +31 40 27 24825 11. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is ava ilable on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 13. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. level data sheet status [1] product status [2][3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2004. printed in the netherlands all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 7 june 2004 document order number: 9397 750 13324 contents philips semiconductors buk7735-55a n-channel trenchmos? standard level fet 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 5 quick reference data . . . . . . . . . . . . . . . . . . . . . 2 6 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 thermal characteristics . . . . . . . . . . . . . . . . . . . 4 7.1 transient thermal impedance . . . . . . . . . . . . . . 4 8 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 11 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 12 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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