preliminary revision 3.0 - 1 - september 2001 preliminary k6r1004v1c-c/c-l, k6r1004v1c-i/c-p cmos sram document title 256kx4 bit (with oe ) high-speed cmos static ram(3.3v operating). revision history the attached data sheets are prepared and approved by samsung electronics. samsung electronics co., ltd. reserve the right to c hange the specifications. samsung electronics will evaluate and reply to your requests and questions on the parameters of this device. if you have any ques- tions, please contact the samsung branch office near your office, call or contact headquarters. rev. no. rev. 0.0 rev. 1.0 rev. 2.0 rev. 2.1 rev.3.0 history initial release with preliminary. release to final data sheet. 1.1. delete preliminary. 1.2. relax dc characteristics. add 10ns & low power ver. v ih /v il change delete 20ns speed bin item previous changed i cc 12ns 65ma 70ma 15ns 63ma 68ma 20ns 60ma 65ma item previous changed min max min max v ih 2.2 v cc +0.5 2.0 v cc +0.3 v il -0.5 0.8 -0.3 0.8 draft data aug. 5th. 1998 sep. 7th. 1998 apr. 24. 2000 oct. 2. 2000 sep. 24. 2001 remark preliminary final final final final
preliminary revision 3.0 - 2 - september 2001 preliminary k6r1004v1c-c/c-l, k6r1004v1c-i/c-p cmos sram 256k x 4 bit (with oe ) high-speed cmos static ram(3.3v operating) general description features ? fast access time 10,12,15ns(max.) ? low power dissipation standby (ttl) : 30 ma (max.) (cmos) : 5 ma (max.) 0.5ma(max.) l-ver. only operating k6r1004v1c-10 : 75 ma (max.) k6r1004v1c-12 : 70 ma (max.) k6r1004v1c-15 : 68 ma (max.) ? single 3.3 0.3v power supply ? ttl compatible inputs and outputs ? fully static operation - no clock or refresh required ? three state outputs ? 2v mimimum data retention : l-ver. only ? center power/ground pin configuration ? standard pin configuration : k6r1004v1c-j : 32-soj-400 the k6r1004v1c is a 1,048,576-bit high-speed static random access memory organized as 262,144 words by 4 bits. the k6r1004v1c uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. the device is fabricated using sam- sung s advanced cmos process and designed for high- speed circuit technology. it is particularly well suited for use in high-density high-speed system applications. the k6r1004v1c is packaged in a 400 mil 32-pin plastic soj. pin function pin name pin function a 0 - a 17 address inputs we write enable cs chip select oe output enable i/o 1 ~ i/o 4 data inputs/outputs v cc power(+3.3v) v ss ground n.c no connection pin configuration (top view) clk gen. i/o 1 ~ i/o 4 cs we oe functional block diagram r o w s e l e c t data cont. column select clk gen. pre-charge circuit memory array 512 rows 512x4 columns i/o circuit & soj 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 a 17 a 16 a 15 a 14 a 13 oe i/o 4 vss vcc i/o 3 a 12 a 11 a 10 a 9 a 8 n.c n.c a 0 a 1 a 2 a 3 cs i/o 1 vcc vss i/o 2 we a 4 a 5 a 6 a 7 n.c a 10 a 11 a 12 a 13 a 14 a 15 a 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 a 9 a 16 a 17 a 8 k6r1004v1c-c10/c12/c15 commercial temp. k6r1004v1c-i10/i12/i15 industrial temp. ordering information
preliminary revision 3.0 - 3 - september 2001 preliminary k6r1004v1c-c/c-l, k6r1004v1c-i/c-p cmos sram recommended dc operating conditions (t a =0 to 70 c) * v il (min) = -2.0v a.c (pulse width 8ns) for i 20 ma. ** v ih (max) = v cc + 2.0v a.c (pulse width 8ns) for i 20 ma. parameter symbol min typ max unit supply voltage v cc 3.0 3.3 3.6 v ground v ss 0 0 0 v input high voltage v ih 2.0 - v cc +0.3** v input low voltage v il -0.3* - 0.8 v capacitance* (t a =25 c, f=1.0mhz) * capacitance is sampled and not 100% tested. item symbol test conditions min max unit input/output capacitance c i/o v i/o =0v - 8 pf input capacitance c in v in =0v - 6 pf absolute maximum ratings* * stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. this is a stress r ating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this spec ification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. parameter symbol rating unit voltage on any pin relative to v ss v in , v out -0.5 to 4.6 v voltage on v cc supply relative to v ss v cc -0.5 to 4.6 v power dissipation p d 1 w storage temperature t stg -65 to 150 c operating temperature commercial t a 0 to 70 c industrial t a -40 to 85 c dc and operating characteristics* (t a =0 to 70 c, vcc=3.3 0.3v, unless otherwise specified) * the above parameters are also guaranteed at industrial temperature range. parameter symbol test conditions min max unit input leakage current i li v in = v ss to v cc -2 2 m a output leakage current i lo cs =v ih or oe =v ih or we =v il v out =v ss to v cc -2 2 m a operating current i cc min. cycle, 100% duty cs =v il, v in =v ih or v il, i out =0 ma 10ns - 75 ma 12ns - 70 15ns - 68 standby current i sb min. cycle, cs =v ih - 30 ma i sb1 f=0mhz, cs 3 v cc -0.2v, v in 3 v cc -0.2v or v in 0.2v normal - 5 ma l-ver. - 0.5 output low voltage level v ol i ol =8 ma - 0.4 v output high voltage level v oh i oh =-4 ma 2.4 - v
preliminary revision 3.0 - 4 - september 2001 preliminary k6r1004v1c-c/c-l, k6r1004v1c-i/c-p cmos sram test conditions parameter value input pulse levels 0v to 3v input rise and fall times 3ns input and output timing reference levels 1.5v output loads see below ac characteristics (t a =0 to 70 c, v cc =3.3 0.3v, unless otherwise noted.) output loads(b) d out 5pf* 319 w 353 w for t hz , t lz , t whz , t ow , t olz & t ohz +3.3v * including scope and jig capacitance output loads(a) d out r l = 50 w z o = 50 w v l = 1.5v 30pf* * capacitive load consists of all components of the test environment. read cycle* * the above parameters are also guaranteed at industrial temperature range. parameter symbol k6r1004v1c-10 k6r1004v1c-12 k6r1004v1c-15 unit min max min max min max read cycle time t rc 10 - 12 - 15 - ns address access time t aa - 10 - 12 - 15 ns chip select to output t co - 10 - 12 - 15 ns output enable to valid output t oe - 5 - 6 - 7 ns chip enable to low-z output t lz 3 - 3 - 3 - ns output enable to low-z output t olz 0 - 0 - 0 - ns chip disable to high-z output t hz 0 5 0 6 0 7 ns output disable to high-z output t ohz 0 5 0 6 0 7 ns output hold from address change t oh 3 - 3 - 3 - ns chip selection to power up time t pu 0 - 0 - 0 - ns chip selection to power downtime t pd - 10 - 12 - 15 ns
preliminary revision 3.0 - 5 - september 2001 preliminary k6r1004v1c-c/c-l, k6r1004v1c-i/c-p cmos sram address data out previous valid data valid data timing diagrams timing waveform of read cycle(1) (address controlled , cs = oe =v il , we =v ih ) t aa t rc t oh timing waveform of read cycle(2) ( we =v ih ) cs address oe data ou t t aa t olz t lz(4,5) t oh t ohz t rc t oe t co t pu t pd t hz(3,4,5) 50% 50% v cc current i cc i sb valid data write cycle* * the above parameters are also guaranteed at industrial temperature range. parameter symbol k6r1004v1c-10 k6r1004v1c-12 k6r1004v1c-15 unit min max min max min max write cycle time t wc 10 - 12 - 15 - ns chip select to end of write t cw 7 - 8 - 9 - ns address set-up time t as 0 - 0 - 0 - ns address valid to end of write t aw 7 - 8 - 9 - ns write pulse width( oe high) t wp 7 - 8 - 9 - ns write pulse width( oe low) t wp1 10 - 12 - 15 - ns write recovery time t wr 0 - 0 - 0 - ns write to output high-z t whz 0 5 0 6 0 7 ns data to write time overlap t dw 5 - 6 - 7 - ns data hold from write time t dh 0 - 0 - 0 - ns end write to output low-z t ow 3 - 3 - 3 - ns
preliminary revision 3.0 - 6 - september 2001 preliminary k6r1004v1c-c/c-l, k6r1004v1c-i/c-p cmos sram notes (read cycle) 1. we is high for read cycle. 2. all read cycle timing is referenced from the last valid address to the first transition address. 3. t hz and t ohz are defined as the time at which the outputs achieve the open circuit condition and are not referenced to v oh or v ol levels. 4. at any given temperature and voltage condition, t hz (max.) is less than t lz (min.) both for a given device and from device to device. 5. transition is measured 200mv from steady state voltage with load(b). this parameter is sampled and not 100% tested. 6. device is continuously selected with cs =v il. 7. address valid prior to coincident with cs transition low. 8. for common i/o applications, minimization or elimination of bus contention conditions is necessary during read and write cycl e. timing waveform of write cycle(1) ( oe = clock) address cs t wp(2) t dw t dh valid data we data in data out t wc t wr(5) t aw t cw(3) high-z(8) high-z oe t ohz(6) t as(4) timing waveform of write cycle(2) ( oe =low fixed) address cs t wp1(2) t dw t dh t ow t whz(6) valid data we data in data out t wc t as(4) t wr(5) t aw t cw(3) (10) (9) high-z(8) high-z
preliminary revision 3.0 - 7 - september 2001 preliminary k6r1004v1c-c/c-l, k6r1004v1c-i/c-p cmos sram notes (write cycle) 1. all write cycle timing is referenced from the last valid address to the first transition address. 2. a write occurs during the overlap of a low cs and we . a write begins at the latest transition cs going low and we going low ; a write ends at the earliest transition cs going high or we going high. t wp is measured from the beginning of write to the end of write. 3. t cw is measured from the later of cs going low to end of write. 4. t as is measured from the address valid to the beginning of write. 5. t wr is measured from the end of write to the address change. t wr applied in case a write ends as cs or we going high. 6. if oe , cs and we are in the read mode during this period, the i/o pins are in the output low-z state. inputs of opposite phase of the output must not be applied because bus contention can occur. 7. for common i/o applications, minimization or elimination of bus contention conditions is necessary during read and write cycl e. 8. if cs goes low simultaneously with we going or after we going low, the outputs remain high impedance state. 9. dout is the read data of the new address. 10.when cs is low : i/o pins are in the output state. the input signals in the opposite phase leading to the output should not be applied. timing waveform of write cycle(3) ( cs =controlled) address cs t aw t dw t dh valid data we data in data out high-z high-z(8) t cw(3) t wp(2) t as(4) t wc t wr(5) high-z high-z t lz t whz(6) functional description * x means don t care. cs we oe mode i/o pin supply current h x x* not select high-z i sb , i sb1 l h h output disable high-z i cc l h l read d out i cc l l x write d in i cc
preliminary revision 3.0 - 8 - september 2001 preliminary k6r1004v1c-c/c-l, k6r1004v1c-i/c-p cmos sram data retention characteristics* (t a =0 to 70 c) * the above parameters are also guaranteed at industrial temperature range. data retention characteristic is for l-ver only. parameter symbol test condition min. typ. max. unit v cc for data retention v dr cs 3 v cc -0.2v 2.0 - 3.6 v data retention current i dr v cc =3.0v, cs 3 v cc -0.2v v in 3 v cc -0.2v or v in 0.2v - - 0.4 ma v cc =2.0v, cs 3 v cc -0.2v v in 3 v cc -0.2v or v in 0.2v - - 0.3 data retention set-up time t sdr see data retention wave form(below) 0 - - ns recovery time t rdr 5 - - ms data retention wave form cs controlled v cc 4.5v v ih v dr cs gnd data retention mode cs 3 v cc - 0.2v t sdr t rdr
preliminary revision 3.0 - 9 - september 2001 preliminary k6r1004v1c-c/c-l, k6r1004v1c-i/c-p cmos sram package dimensions units:millimeters/inches #1 32-soj-400 #32 20.95 0.12 0.825 0.005 1 0 . 1 6 0 . 4 0 0 + 0.10 max 21.36 0.841 0.20 - 0.05 + 0.004 0.008 - 0.002 9.40 0.25 0.370 0.010 max 0.148 3.76 min 0.69 0.027 1.30 ( ) 0.051 1.30 ( ) 0.051 0.95 ( ) 0.0375 + 0.10 0.43 - 0.05 + 0.004 0.017 - 0.002 + 0.10 0.71 - 0.05 + 0.004 0.028 - 0.002 1.27 0.050 #16 #17 0.004 0.10 max 11.18 0.12 0.440 0.005
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