k6x4008t1f family cmos sram revision 2.0 march 2005 1 document title 512kx8 bit low power and low voltage cmos static ram revision history revision no. 0.0 0.1 0.2 0.21 1.0 2.0 remark preliminary preliminary preliminary preliminary final final history initial draft revised - added 55ns product( vcc = 3.0v~3.6v) revised - added commercial product revised - errata correction : corrected comme rcial product family name from k6x4008t1f-f to k6x4008t1f-b in product family. finalized - changed i cc from 4ma to 2ma - changed i cc 1 from 4ma to 3ma - changed i cc 2 from 30ma to 25ma - changed i sb 1 (commercial) from 15 a to 10 a - changed i sb 1 (industrial) from 20 a to 10 a - changed i sb 1 (automotive) from 30 a to 20 a - changed i dr (commercial) from 15 a to 10 a - changed i dr (industrial) from 20 a to 10 a - changed i dr (automotive) from 30 a to 20 a revised - added lead free product - changed i sb 1 (automotive) from 20 a to 30 a - changed i dr (automotive) from 20 a to 30 a draft data july 29, 2002 october 14, 2002 december 2, 2002 march 26, 2003 september 16, 2003 march 7, 2005 the attached datasheets are provided by sa msung electronics. samsung electronics co., ltd. reserve the right to change the spe cifications and products. samsung electronics will answer to your questions about device. if you hav e any questions, please contact the samsung branch offices.
k6x4008t1f family cmos sram revision 2.0 march 2005 2 512k 8 bit low power and low voltage cmos static ram general description the k6x4008t1f families are fabricated by samsung s advanced full cmos process te chnology. the families support various operating temperature range and have various package types for user flexibility of syst em design. the families also sup- port low data retention voltage for battery back-up operation with low data retention current. features ? process technology: full cmos ? organization: 512k 8 ? power supply voltage: 2.7~3.6v ? low data retention voltage: 2v(min) ? three state outputs ? package type: 32-sop-525, 32-tsop2-400f/r 32-tsop1-0813.4f pin description name function name function a 0 ~a 18 address inputs vcc power we write enable input vss ground cs chip select input i/o 1 ~i/o 8 data inputs/outputs oe output enable input product family 1. this parameter is measured in the voltage range of 3.0v~3.6v with 30pf test load. 2. this parameter is measured with 30pf test load. product family operating temperature vcc range speed power dissipation pkg type standby (i sb1 , max) operating (i cc2 , max) k6x4008t1f-b commercial(0~70 c) 2.7~3.6v 55 1) /70 2) /85ns 10 a 25ma 32-sop-525, 32-tsop1-0813.4f 32-tsop2-400f/r k6x4008t1f-f industrial(-40~85 c) 10 a k6x4008t1f-q automotive(-40~125 c) 70 2) /85ns 30 a 32-sop-525, 32-tsop1-0813.4f 32-tsop2-400f functional block diagram 32-sop (forward) 32-tsop2 a16 a14 a12 a7 a6 a5 a4 a3 a2 a1 a0 i/o1 i/o2 i/o3 vss vcc a15 we a13 a8 a9 a11 oe a10 cs i/o8 i/o7 i/o6 i/o5 i/o4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32-tsop2 a16 a14 a12 a7 a6 a5 a4 a3 a2 a1 a0 i/o1 i/o2 i/o3 vss vcc a15 we a13 a8 a9 a11 oe a10 cs i/o8 i/o7 i/o6 i/o5 i/o4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (reverse) a18 a17 a17 a18 samsung electronics co., ltd. reserves the right to change produc ts and specificatio ns without notice. precharge circuit. memory array i/o circuit column select clk gen. row select cs we i/o 1 data cont data cont oe i/o 8 a11 a9 a8 a13 we a17 a15 vcc a18 a16 a14 a12 a7 a6 a5 a4 oe a10 cs i/o8 i/o7 i/o6 i/o5 i/o4 vss i/o3 i/o2 i/o1 a0 a1 a2 a3 (forward) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 control logic 32- s tsop1 row addresses column addresses
k6x4008t1f family cmos sram revision 2.0 march 2005 3 product list 1. operating voltage range is 3.0v~3.6v 2. l/f : lead free package commercial products(0~70 c) industrial products(-40~85 c) automotive products(-40~125 c) part name function part name function part name function k6x4008t1f-gb55 1) k6x4008t1f-gb70 k6x4008t1f-gb85 k6x4008t1f-bb55 1) k6x4008t1f-bb70 k6x4008t1f-bb85 k6x4008t1f-yb55 1) k6x4008t1f-yb70 k6x4008t1f-yb85 k6x4008t1f-lb55 1) k6x4008t1f-lb70 k6x4008t1f-lb85 k6x4008t1f-vb55 1) k6x4008t1f-vb70 k6x4008t1f-vb85 k6x4008t1f-ub55 1) k6x4008t1f-ub70 k6x4008t1f-ub85 k6x4008t1f-mb55 1) k6x4008t1f-mb70 k6x4008t1f-mb85 k6x4008t1f-qb55 1) k6x4008t1f-qb70 k6x4008t1f-qb85 32-sop, 55ns 32-sop, 70ns 32-sop, 85ns 32-sop, 55ns, l/f 2) 32-sop, 70ns, l/f 32-sop, 85ns, l/f 32-stsop1-f, 55ns 32-stsop1-f, 70ns 32-stsop1-f, 85ns 32-stsop1-f, 55ns, l/f 32-stsop1-f, 70ns, l/f 32-stsop1-f, 85ns, l/f 32-tsop2-f, 55ns 32-tsop2-f, 70ns 32-tsop2-f, 85ns 32-tsop2-f, 55ns, l/f 32-tsop2-f, 70ns, l/f 32-tsop2-f, 85ns, l/f 32-tsop2-r, 55ns 32-tsop2-r, 70ns 32-tsop2-r, 85ns 32-tsop2-r, 55ns, l/f 32-tsop2-r, 70ns, l/f 32-tsop2-r, 85ns, l/f k6x4008t1f-gf55 1) k6x4008t1f-gf70 k6x4008t1f-gf85 k6x4008t1f-bf55 1) k6x4008t1f-bf70 k6x4008t1f-bf85 k6x4008t1f-yf55 1) k6x4008t1f-yf70 k6x4008t1f-yf85 k6x4008t1f-lf55 1) k6x4008t1f-lf70 k6x4008t1f-lf85 k6x4008t1f-vf55 1) k6x4008t1f-vf70 k6x4008t1f-vf85 k6x4008t1f-uf55 1) k6x4008t1f-uf70 k6x4008t1f-uf85 k6x4008t1f-mf55 1) k6x4008t1f-mf70 k6x4008t1f-mf85 k6x4008t1f-qf55 1) k6x4008t1f-qf70 k6x4008t1f-qf85 32-sop, 55ns 32-sop, 70ns 32-sop, 85ns 32-sop, 55ns, l/f 32-sop, 70ns, l/f 32-sop, 85ns, l/f 32-stsop1-f, 55ns 32-stsop1-f, 70ns 32-stsop1-f, 85ns 32-stsop1-f, 55ns, l/f 32-stsop1-f, 70ns, l/f 32-stsop1-f, 85ns, l/f 32-tsop2-f, 55ns 32-tsop2-f, 70ns 32-tsop2-f, 85ns 32-tsop2-f, 55ns, l/f 32-tsop2-f, 70ns, l/f 32-tsop2-f, 85ns, l/f 32-tsop2-r, 55ns 32-tsop2-r, 70ns 32-tsop2-r, 85ns 32-tsop2-r, 55ns, l/f 32-tsop2-r, 70ns, l/f 32-tsop2-r, 85ns, l/f k6x4008t1f-gq70 k6x4008t1f-gq85 k6x4008t1f-bq70 k6x4008t1f-bq85 k6x4008t1f-yq70 k6x4008t1f-yq85 k6x4008t1f-lq70 k6x4008t1f-lq85 k6x4008t1f-vq70 k6x4008t1f-vq85 k6x4008t1f-uq70 k6x4008t1f-uq85 32-sop, 70ns 32-sop, 85ns 32-sop, 70ns, l/f 32-sop, 85ns, l/f 32-stsop1-f, 70ns 32-stsop1-f, 85ns 32-stsop1-f, 70ns, l/f 32-stsop1-f, 85ns, l/f 32-tsop2-f, 70ns 32-tsop2-f, 85ns 32-tsop2-f, 70ns, l/f 32-tsop2-f, 85ns, l/f functional description 1. x means don t care (must be in low or high state) cs oe we i/o mode power h x 1) x 1) high-z deselected standby l h h high-z output disabled active l l h dout read active l x 1) l din write active absolute maximum ratings 1) 1. stresses greater than those listed under "absolute maximum ratings" may cause permane nt damage to the device. functional ope ration should be restricted to recommended operating condition . exposure to absolute maximum rating c onditions for extended periods may affect reliability. item symbol ratings unit remark voltage on any pin relative to vss v in , v out -0.2 to v cc +0.3(max. 3.9v) v - voltage on vcc supply relative to vss v cc -0.2 to 3.9 v - power dissipation p d 1.0 w - storage temperature t stg -65 to 150 c- operating temperature t a 0 to 70 c k6f4008t1f-b -40 to 85 c k6f4008t1f-f -40 to 125 c k6f4008t1f-q
k6x4008t1f family cmos sram revision 2.0 march 2005 4 recommended dc operating conditions 1) note: 1. commercial product: t a =0 to 70 c, otherwise specified industrial product: t a =-40 to 85 c, otherwise specified automotive product: t a =-40 to 125 c, otherwise specified 2. overshoot: v cc +2.0v in case of pulse width 30ns 3. undershoot: -2.0v in case of pulse width 30ns 4. overshoot and undershoot are sampled, not 100% tested. item symbol min typ max unit supply voltage vcc 2.7 3.0/3.3 3.6 v ground vss 0 0 0 v input high voltage v ih 2.2 - vcc+0.2 2) v input low voltage v il -0.2 3) -0.6v capacitance 1) (f=1mhz, t a =25 c) 1. capacitance is sampled, not 100% tested. item symbol test condition min max unit input capacitance c in v in =0v - 8 pf input/output capacitance c io v io =0v - 10 pf dc and operating characteristics item symbol test conditions min typ max unit input leakage current i li v in =vss to vcc -1 - 1 a output leakage current i lo cs =v ih or oe =v ih or we =v il v io =vss to vcc -1 - 1 a operating power supply current i cc i io =0ma, cs =v il , v in =v il or v ih , read - - 2 ma average operating current i cc1 cycle time=1 s, 100% duty, i io =0ma cs 0.2v,v in 0.2v or v in vcc-0.2v --3ma i cc2 cycle time=min, 100% duty, i io =0ma, cs =v il, v in =v ih or v il --25ma output low voltage v ol i ol =2.1ma - - 0.4 v output high voltage v oh i oh =-1.0ma 2.4 - - v standby current(ttl) i sb cs =v ih , other inputs = v il or v ih --0.3ma standby current (cmos) i sb1 cs vcc-0.2v, other inputs=0~vcc k6x4008t1f-b - - 10 a k6x4008t1f-f - - 10 a k6x4008t1f-q - - 30 a
k6x4008t1f family cmos sram revision 2.0 march 2005 5 ac characteristics (v cc =2.7~3.6v, commercial product: t a =0 to 70 c, industrial product: t a =-40 to 85 c, automotive product: t a =-40 to 125 c) 1. voltage range is 3.0v~3.6v for commercial and industrial product. parameter list symbol speed bins units 55ns 1) 70ns 85ns min max min max min max read read cycle time t rc 55 - 70 - 85 - ns address access time t aa -55-70-85ns chip select to output t co -55-70-85ns output enable to valid output t oe -25-35-40ns chip select to low-z output t lz 10 - 10 - 10 - ns output enable to low-z output t olz 5-5-5-ns chip disable to high-z output t hz 020025025ns output disable to high-z output t ohz 020025025ns output hold from address change t oh 10 - 10 - 10 - ns write write cycle time t wc 55 - 70 - 85 - ns chip select to end of write t cw 45 - 60 - 70 - ns address set-up time t as 0-0-0-ns address valid to end of write t aw 45 - 60 - 70 - ns write pulse width t wp 40 - 55 - 55 - ns write recovery time t wr 0-0-0-ns write to output high-z t whz 020025025ns data to write time overlap t dw 25 - 30 - 35 - ns data hold from write time t dh 0-0-0-ns end write to output low-z t ow 5-5-5-ns c l 1) 1. including scope and jig capacitance ac operating conditions test conditions (test load and input/output reference) input pulse level: 0.4 to 2.2v input rising and falling time: 5ns input and output reference voltage: 1.5v output load(see right): c l =100pf+1ttl c l 1) =30pf+1ttl 1. 55ns, 70ns product data retention characteristics 1. typical values are measured at t a = 25 c and not 100% tested. item symbol test condition min typ 1) max unit vcc for data retention v dr cs vcc-0.2v 2.0 - 3.6 v data retention current i dr vcc=3.0v, cs vcc-0.2v k6x4008t1f-b - 0.5 10 a k6x4008t1f-f - 10 a k6x4008t1f-q - 30 a data retention set-up time t sdr see data retention waveform 0- - ms recovery time t rdr 5- -
k6x4008t1f family cmos sram revision 2.0 march 2005 6 address data out previous data valid data valid timing diagrams timing waveform of read cycle(1) (address controlled , cs =oe =v il , we =v ih ) t aa t rc t oh timing waveform of read cycle(2) (we =v ih ) data valid high-z cs address oe data out notes (read cycle) 1. t hz and t ohz are defined as the time at which the outputs achieve the op en circuit conditions and are not referenced to output voltage levels. 2. at any given temperature and voltage condition, t hz (max.) is less than t lz (min.) both for a given device and from device to device interconnection. t oh t aa t olz t lz t ohz t hz t rc t oe t co1
k6x4008t1f family cmos sram revision 2.0 march 2005 7 timing waveform of write cycle(2) (cs controlled) address cs t wc t wr(4) t as(3) t dw t dh data valid we data in data out high-z high-z t cw(2) t wp(1) t aw notes (write cycle) 1. a write occurs during the overlap of a low cs and a low we . a write begins at the latest transition among cs going low and we going low : a write end at the earliest transition among cs going high and we going high, t wp is measured from the begining of write to the end of write. 2. t cw is measured from the cs going low to the end of write. 3. t as is measured from the address valid to the beginning of write. 4. t wr is measured from the end of write to the address change. t wr is applied in case a write ends with cs or we going high. data retention wave form cs controlled v cc 2.7v 2.2v v dr cs gnd data retention mode cs v cc - 0.2v t sdr t rdr timing waveform of write cycle(1) (we controlled) address cs t cw(2) t wr(4) t wp(1) t dw t dh t ow t whz data undefined data valid we data in data out t wc t aw t as(3)
k6x4008t1f family cmos sram revision 2.0 march 2005 8 package dimensions units: millimeters(inches) 32 pin plastic small ou tline package (525mil) 0~8 #32 20.47 0.20 0.806 0.008 max 20.87 0.822 max 2.74 0.20 0.108 0.008 3.00 0.118 min 0.002 0.05 0.004 max 0.10 max #1 0.71 ( ) 0.028 13.34 0.525 11.43 0.20 0.450 0.008 0.80 0.20 0.031 0.008 +0.10 0.20 -0.05 +0.004 0.008 -0.002 14.12 0.30 0.556 0.012 #17 #16 1.27 0.050 +0.100 0.41 -0.050 +0.004 0.016 -0.002 32 pin smaller thin small ou tline package type i (0813.4f) 1.00 0.10 0.039 0.004 max 8.40 0.331 1.10 max 0.004 max #1 0.50 ( ) 0.020 11.80 0.10 0.465 0.004 0.45 ~0.75 0.018 ~0.030 13.40 0.20 0.528 0.008 +0.10 0.15 -0.05 +0.004 0.006 -0.002 0~8 +0.10 0.20 -0.05 +0.004 0.008 -0.002 0.50 0.0197 0.25 ( ) 0.010 min 0.05 0.002 max 1.20 0.047 8.00 0.315 typ 0.25 0.010 #16 #32 #17
k6x4008t1f family cmos sram revision 2.0 march 2005 9 32 pin thin small outlin e package type ii (400f) 0~8 #32 20.95 0.10 0.825 0.004 max 21.35 0.841 max 1.00 0.10 0.039 0.004 1.20 0.047 min 0.002 0.05 0.004 max 0.10 max #1 0.95 ( ) 0.037 10.16 0.400 +0.10 0.15 -0.05 +0.004 0.006 -0.002 11.76 0.20 0.463 0.008 #17 #16 0.50 ( ) 0.020 0.45~0.75 0.018 ~ 0.030 0.25 ( ) 0.010 1.27 0.050 0.40 0.10 0.016 0.004 package dimensions 32 pin thin small outlin e package type ii (400r) 0~8 #32 #1 10.16 0.400 +0.10 0.15 -0.05 +0.004 0.006 -0.002 11.76 0.20 0.463 0.008 #17 #16 0.50 ( ) 0.020 0.45 ~0.75 0.018 ~ 0.030 0.25 ( ) 0.010 20.95 0.10 0.825 0.004 max 21.35 0.841 max 1.00 0.10 0.039 0.004 1.20 0.047 min 0.002 0.05 0.004 max 0.10 max 0.95 ( ) 0.037 1.27 0.050 0.40 0.10 0.016 0.004 units: millimeters(inches)
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