Part Number Hot Search : 
8251A MBRP300 AOB414 C85FCCBA BB1F3P 74F323PC EG2325A AQV251
Product Description
Full Text Search
 

To Download BAR63V-03W-GS18 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  bar63v-03w document number 85697 rev. 1.3, 15-apr-05 vishay semiconductors www.vishay.com 1 18375 12 3 1 2 3 rf pin diode - single in sot-323 description characterized by a very low reverse capacitance the pin diode bar63v-03w was designed for rf signal tuning. as a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 ? while the low reverse capacitance offers a high isolation. typical applications for this pin diodes are wireless, mobile and tv-systems. features ? low forward resistance  very small reverse capacitance  lead (pb)-free component  component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications for frequency up to 3 ghz rf-signal tuning mobile, wireless and tv-applications mechanical data case: sot-323 plastic case weight: approx. 6.0 mg packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified part ordering code marking remarks bar63v-03w BAR63V-03W-GS18 or bar63v-03w-gs08 cw3 tape and reel parameter test condition symbol value unit reverse voltage v r 50 v forward current i f 100 ma junction temperature t j 150 c storage temperature range t stg - 55 to + 150 c parameter test condition symbol min ty p. max unit reverse voltage i r = 10 av r 50 v reverse current v r = 35 v i r 10 na forward voltage i f = 100 ma v f 1.2 v diode capacitance f = 1 mhz, v r = 0 c d 0.28 pf f = 1 mhz, v r = 5 v c d 0.23 0.3 pf e3
www.vishay.com 2 document number 85697 rev. 1.3, 15-apr-05 bar63v-03w vishay semiconductors typical characteri stics (tamb = 25 c unless otherwise specified) forward resistance f = 100 mhz, i f = 1 ma r f 2.0 ? f = 100 mhz, i f = 5 ma r f 1.1 2.0 ? f = 100 mhz, i f = 10 ma r f 0.9 ? charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma t rr 115 ns parameter test condition symbol min ty p. max unit figure 1. forward resistance vs. forward current figure 2. diode capacitance vs. reverse voltage             
            !"  #$   0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 4 8 12 16 20 24 28 18333 v r - reverse v oltage (v) c - diode capacitance ( pf ) d f=1mhz figure 3. forward current vs. forward voltage figure 4. reverse voltage vs. reverse current 0.01 0.10 1.00 10.00 100.00 0.5 0.6 0.7 0.8 0.9 1.0 i - forward current ( ma ) v f - forward voltag e(v) 18325 f 0 20 40 60 80 100 120 0.01 0.1 1.0 10 100 1000 v - reverse v oltag e(v) i r - reverse current ( a) 18329 r
bar63v-03w document number 85697 rev. 1.3, 15-apr-05 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) figure 5. typical charge recovery curve -8 -6 -4 -2 0 2 4 6 8 10 12 -50 0 50 100 150 200 18337 recovery time ( ns ) i - forward current ( ma ) f i f =10ma i r =6ma i rr =3ma 96 12236 0.9 (0.035) 0.39 (0.015) mounting pad layout 0.95 (0.37) 0.95 (0.037) 2.0 (0.079) 1.00 (0.039) 10 0.10 (0.004) 0.10 (0.004) 2.05 (0.080) 2.00 (0.078) 1.25 (0.049) 0.30 (0.012) 1.3 (0.051) s o m e t h o d e
www.vishay.com 4 document number 85697 rev. 1.3, 15-apr-05 bar63v-03w vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.


▲Up To Search▲   

 
Price & Availability of BAR63V-03W-GS18

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X