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| Datasheet File OCR Text: |
| 4-l53p-1 features l mechanically and spectrally matched to the l-53 series infrared emitting led lamp. l water clear lens. description made with npn silicon phototransistor chips. notes: 1. all dimensions are in millimeters (inches). 2. tolerance is 0.25(0.01") unless oth erwise noted. 3. lead spacing is measured where the lead emer- ge package. 4. specifications are subjected to change without notice. absolute maximum ratings at t a =25 c kingbright ? c c c c c package dimensions c parameter maximum rating collector-to-emitter breakdown voltage 30v emitter-to-collector breakdown voltage 5v power dissipation at (or below) 25 free air temperature 100mw operating temperature range -40 ~ +85 storage temperature range -40 ~ +85 lead soldering temperature (4mm for 5sec) 260 t-1 3/4(5mm) phototransistor L-53P3C
4-l53p-2-2 symbol parameter min. typ. max. unit test condiction collector-to-emitter breakdown voltage 30 - - v emitter-to-collector breakdown voltage 5 - - v collector-to-emitter saturation voltage - - 0.8 v collector dark current - - 100 na rise time (10% to 90%) - 3 - us fall time (90% to 10%) - 3 - us on state collector current 1.2 - 1.9 ma 1.9 - 2.6 ma 2.6 3.3 ma 3.3 - 4.0 ma electrical and radiant characteristics t a =25 c v br ceo v br eco v ce (sat) i ceo i (on) t r t f i c =100ua i b =0 i e =100ua i b =0 i c =0.1ma h=2.5mw/cm 2 v ce =10v h=0mw/cm 2 v ce =5v i c =1ma r l =100 ohms v ce =5v e e =1mw/cm 2 l =940nm 4-l53p-3 L-53P3C |
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