2sb920 / 2sd1236 no.1027-1/4 applications ? large current switching of relay drivers, high-speed inverters, converters. features ? low collector-to-emitter saturation voltage : v ce (sat)=--0.5v (pnp), 0.4v (npn) max. ? large current capacity. specifications ( ) : 2sb920 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)120 v collector-to-emitter voltage v ceo (--)80 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)5 a collector current (pulse) i cp (--)9 a collector dissipation p c 1.75 w tc=25 c30w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)80v, i e =0 (--)0.1 ma emitter cutoff current i ebo v eb =(--)4v, i c =0 (--)0.1 ma continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn1027a 2sb920 / 2sd1236 large current switching applications package dimensions unit : mm 2010c [2sb920 / 2sd1236] 92502 ts im 8-4532 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. pnp / npn epitaxial planar silicon transistors 1 : base 2 : collector 3 : emitter sanyo : to-220 10.2 5.1 3.6 18.0 5.6 2.7 6.3 15.1 1.2 14.0 0.8 1.3 4.5 0.4 2.55 2.55 2.7 123
2sb920 / 2sd1236 no.1027-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit dc current gain h fe 1* v ce =(--)2v, i c =(--)1a 70* 280* h fe 2v ce =(--)2v, i c =(--)3a 30 gain-bandwidth product f t v ce =(--)5v, i c =(--)1a 20 mhz collector-to-emitter saturation voltage v ce (sat) i c =(--)3a, i b =(--)0.3a (--0.5)0.4 v collector-to-base breakdown voltage v (br)cbo i c =(--)1ma, i e =0 (--)120 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)80 v emitter-to-base breakdown voltage v (br)ebo i e =(--)1ma, i c =0 (--)6 v turn-on time t on see specified test circuit. (0.2)0.1 m s storage time t stg see specified test circuit. (0.7)1.2 m s fall time t f see specified test circuit. (0.2)0.4 m s *the 2sb920 / 2sd1236 are graded as follows by h fe at 1a : rank q r s h fe 70 to 140 100 to 200 140 to 280 swicthing time test circuit 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i c -- v ce it04407 2sb920 from top --200ma --180ma --160ma --140ma --120ma i b =0 i c -- v ce it04408 2sd1236 i b =0 --40ma --20ma --100ma --80ma --60ma 40ma 60ma 80ma 100ma 120ma 140ma 20ma 160ma 200ma 180ma 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 -- 9 --10 0 1 2 3 4 5 6 7 8 9 10 i c -- v ce it04409 2sb920 i b =0 i c -- v ce it04410 2sd1236 i b =0 --200ma --100ma --400ma --300ma 200ma 300ma 400ma 500ma 600ma 700ma 100ma 800ma 900ma 1a --600ma --800ma --900ma 1a --500ma --700ma collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a v r =10 r b =1 v cc =50v v be = --5v + + 50 input output r l =25 100 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =10i b1 = --10i b2 =2a for pnp, the polarity is reversed.
2sb920 / 2sd1236 no.1027-3/4 v ce (sat) -- i c it04415 2sb920 i c / i b =10 v ce (sat) -- i c it04416 2sd1236 i c / i b =10 --0.01 --0.1 23 5 23 5 23 5 --1.0 --10 2 0.01 0.1 23 5 23 5 23 5 1.0 10 2 1.0 10 100 1000 5 2 3 5 2 3 5 2 3 --0.01 --0.1 23 5 23 5 23 5 --1.0 --10 2 --0.01 --0.1 --10 5 2 --1.0 5 2 5 2 0.01 0.1 23 5 23 5 23 5 1.0 10 2 0.01 0.1 10 1.0 5 2 5 2 5 2 1.0 10 100 1000 5 2 3 5 2 3 5 2 3 h fe -- i c it04413 h fe -- i c it04414 2sd1236 v ce =2v 2sb920 v ce = --2v 0 i c -- v be -- 2 -- 4 -- 6 -- 8 --10 --12 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 2 0 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 it04411 2sb920 v ce = --2v i c -- v be it04412 2sd1236 v ce =2v ta=120 c 25 c --40 c ta=120 c 25 c --40 c ta=120 c 25 c --40 c ta=120 c 25 c --40 c ta=120 c 25 c --40 c ta= --40 c 25 c 120 c ta= --40 c 25 c 120 c ta=120 c 25 c --40 c v be (sat) -- i c it04417 2sb920 i c / i b =10 v be (sat) -- i c it04418 2sd1236 i c / i b =10 --0.01 --0.1 23 5 23 5 23 5 --1.0 --10 2 --0.1 --1.0 5 2 3 5 2 3 0.1 1.0 5 2 3 5 2 3 0.01 0.1 23 5 23 5 23 5 1.0 10 2 base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a dc current gain, h fe collector current, i c -- a collector current, i c -- a dc current gain, h fe collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- v collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v
2sb920 / 2sd1236 no.1027-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of september, 2002. specifications and information herein are subject to change without notice. ps --1.0 --10 25 37 --100 25 37 a s o 3 --1.0 --10 5 7 3 2 --0.1 5 7 5 7 3 2 2 it04419 10ms 1ms dc operation 1ms to 10ms : single pulse 2sb920 i c = --5a i cp = --9a 100ms 1.0 10 25 37 100 25 37 a s o 3 1.0 10 5 7 3 2 0.1 5 7 5 7 3 2 2 it04420 10ms 1ms dc operation 2sd1236 i c =5a i cp =9a 100ms collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a 1ms to 10ms : single pulse it04479 p c -- ta ambient temperature, ta -- c collector dissipation, p c -- w it05325 0 100 20 60 40 80 120 140 160 0 5 15 25 30 20 10 35 2sb920 / 2sd1236 p c -- tc case temperature, tc -- c collector dissipation, p c -- w 0 100 20 60 40 80 120 140 160 0 1.75 1.5 1.0 0.5 2.0 no heatsink 2sb920 / 2sd1236
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