DXTA44 discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor pinning 1 = base 2 = collector 3 = emitter description designed for applications requiring high breakdown voltage. sot-89 dimensions in inches and (millimeters) .063(1.60).055(1.40) .066(1.70).059(1.50) .167(4.25).159(4.05) .016(0.41).014(0.35) .120(3.04) .117(2.96) .181(4.60).173(4.40) .060(1.52).058(1.48) .020(0.51).014(0.36) .102(2.60).095(2.40) 1 2 3 characteristic symbol rating unit collector-base voltage vcbo 400 v collector-emitter voltage vceo 400 v emitter-base voltage vebo 6 v collector current ic 300 ma total power dissipation pd 1 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 400 - - v ic=100ma collector-emitter breakdown voltage bvceo 400 - - v ic=1ma emitter-base breakdown volatge bvebo 6 - - v ie=10ma collector cutoff current icbo - - 100 na vcb =400v ices - - 500 na vce =400v emitter cutoff current iebo - - 100 na veb =4v collector-emitter saturation voltage (1) vce(sat)1 - - 0.375 v ic=20ma, ib=2ma vce(sat)2 - - 0.75 v ic=50ma, ib=5ma base-emitter saturation voltage (1) vbe(sat) - - 0.75 v ic=10ma, ib=1ma hfe1 40 - - - ic=1ma, vce=10v dc current gain(1) hfe2 50 - 300 - ic=10ma, vce=10v hfe3 45 - - - ic=50ma, vce=10v hfe4 40 - - - ic=100ma, vce=10v output capacitance cob - 4 6 pf vcb =20v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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