DXTA94 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor pinning 1 = base 2 = collector 3 = emitter description designed for applications requiring high breakdown voltage. sot-89 dimensions in inches and (millimeters) .063(1.60).055(1.40) .066(1.70).059(1.50) .167(4.25).159(4.05) .016(0.41).014(0.35) .120(3.04) .117(2.96) .181(4.60).173(4.40) .060(1.52).058(1.48) .020(0.51).014(0.36) .102(2.60).095(2.40) 1 2 3 characteristic symbol rating unit collector-base voltage vcbo -400 v collector-emitter voltage vceo -400 v emitter-base voltage vebo -6 v collector current ic -500 ma total power dissipation pd 1 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -400 - - v ic=-100ma collector-emitter breakdown voltage bvceo -400 - - v ic=-1ma emitter-base breakdown volatge bvebo -6 - - v ie=-10ma collector cutoff current icbo - - -100 na vcb =-400v ices - - -500 na vce =-400v, vbe=0 emitter cutoff current iebo - - -100 na veb =-6v vce(sat)1 - - -0.35 v ic=-1ma, ib=-0.1ma collector-emitter saturation voltage (1) vce(sat)2 - - -0.5 v ic=-10ma, ib=-1ma vce(sat)3 - - -0.75 v ic=-50ma, ib=-5ma base-emitter saturation voltage (1) vbe(sat) - - -0.75 v ic=-10ma, ib=-1ma hfe1 40 - - - ic=-1ma, vce=-10v dc current gain(1) hfe2 50 - 300 - ic=-10ma, vce=-10v hfe3 45 - - - ic=-50ma, vce=-10v hfe4 40 - - - ic=-100ma, vce=-10v electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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