features: 850nm multi-mode oxide isolated vcsel capable of modulation operation from dc to 2.5gbps to-46 flat window metal can component designed for drive currents between 3-15ma average packaged with a back monitor attenuated window can unattenuated versions also available 2.5gbps 850nm vcsel to-46 package hfe409x-342 data sheet these products are high-performance 850nm vcsels (vertical cavity surface- emitting lasers) designed for high-speed data communications and packaged with a custom designed power monitor diode. the power monitor diode can be used with appropriate feedback control circuitry to set a maximum power level for the vcsel. these combined features simplify design for high data rate communication and eye safety. these products are high radiance vcsels designed to convert electrical current into optical power that can be used in fiber optic communications and other applications. as the current varies above threshold, the light intensity increases proportionally. these products are designed to be used with inexpensive silicon or gallium arsenide detectors, but excellent performance can also be achieved with some indium gallium arsenide detectors (see hfd3081-002 and hfd3081-102 product data sheets). the low drive current requirement makes direct drive from pecl (positive emitter coupled logic) or ecl (emitter coupled logic) gates possible and eases driver design. these are designed to interface with 50/125 and 62.5/125 m multi-mode fiber. they produce circularly symmetric, non-astigmatic, narrow divergence beams that, with appropriate lensing, fiber couple all of the emitter power (see sc, lc and mu connectorized product data sheets). part number description HFE4093-342 unattenuated to-46 component, vcsel with back monitor photodiode, anode of vcsel common with photodiode cathode hfe4094-342 unattenuated to-46 component, vcsel with back monitor photodiode, cathode of vcsel common with photodiode anode
hfe409x-341 2.5gbps 850nm vcsel to-46 package laser radiation avoid exposure to beam class 3b laser product invisible laser radiation avoid exposure to beam class 3b laser product 30mw at 820-860 nm per iec/en 60825-1/a2.2001 and 21 cfr 1040.10 and 1040.11 except for deviations pursuant to laser notice no.50 dated 26 july 2001 advanced optical components 600 millennium drive, allen, tx 75013 semiconductor laser avoid exposure : invisible laser radiation is emitted from this aperture. n otice: stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operations section for extended periods of time may affect reliability. absolute maximum ratings parameter r atin g storage temperature -40 o c to +100 o c operating temperature -40 o c to +85 o c, see note 1 (page 3) lead solder temperature 260 o c, 10 seconds laser continuous average current 12ma laser peak forward current with pulse width less than 1 s 18ma laser reverse voltage 5v pn55449
hfe409x-341 electro-optical characteristics (t a =25 o c unless otherwise stated) vcsel parameters test condition symbol min. typ. max. units notes optical power output i f = 7ma p o 2.0 mw 2 threshold current i th 0.5 1.8 2.5 ma t a = 0 o c to 70 o c ?i th -0.5 1 ma 3 t a = 25 o c to 85 o c ?i th 1.7 ma 3 threshold current maximum deviation from 25 o c value t a = -40 o c to 25 o c ?i th 2.5 ma 3 temperature at minimum threshold current t o -20 50 o c 3 t a = 25 o c 0.225 0.4 0.6 mw/ma 4 t a = -40 o c 0.75 mw/ma slope efficiency t a = 85 o c 0.19 mw/ma slope efficiency temperature variation t a = 0 o c to 70 o c ?/?t -6000 ppm/ o c 5 peak wavelength i f = 7ma, t a = 0 o c to 85 o c p 830 850 860 nm p temperature variation i f = 7ma, t a = -40 o c to 85 o c ? p /?t 0.06 nm/ o c spectral bandwidth, rms i f = 7ma ? 0.65 nm laser forward voltage i f = 7ma v f 1.8 2.0 v rollover p max 4.0 mw 6 rise and fall times pavg = 2mw, extin ction ratio = 10 t r t f 130 150 ps 7 relative intensity noise 1 ghz bw, i f = 7ma rin -130 -122 db/hz i f = 7ma , t a = 25 o c r s 25 35 50 ? t a = -40 o c r s 60 ? series resistance t a = 85 o c r s 20 ? series resistance temperature coefficient i f = 7ma, t a = 0 o c to 70 o c ?r s /? t -3000 ppm/ o c 8 beam divergence 15 30 degrees 9 beam divergence current variation ?/? f 0.45 degree/ma photodiode parameters test condition symbol min. typ. max. units notes po = 2mw, t a = 25 o c i pd tbd 0.025 tbd ma 10 po = 2mw, t a = -40 o c i pd tbd tbd 10 monitor current po = 2mw, t a = +85 o c i pd tbd tbd ma 10 monitor current temperature variation po = 2mw, 0 o c to 70 o c ?i pd /? t tbd %/ o c 10 monitor current tracking deltrk tbd 10, 11 dark current po = 0 mw, v r = 3v i d 20 na pd capacitance v r = 0v, freq = 1mhz v r = 3v, freq = 1mhz c 75 40 100 55 pf electrical-optical characteristics
hfe409x-341 2.5gbps 850nm vcsel to-46 package notes 1. reliability is a function of temperature, see www.finisar.com/aoc.php for details. 2. for the purpose of these tests, i f is dc current. 3) threshold current varies as (t a C t o ) 2 . it may either increase or decrease with temperature, depending upon relationship of t a to t o . the magnitude of the change is proportional to the threshold at t o . 4) slope efficiency is defined as ? p o / ? i f . 5) to compute the value of slope efficiency at a temperature t, use the following equation: (t) ? (25 o c)*[1+( ?/? t)*(t-25)] 6) rollover is the power at which a further current increase does not result in a power increase. 7) rise and fall times specifications are the 20% - 80%. most of the devices will measure <135ps fall time. rise and fall times are sensitive to drive electronics. 8) to compute the value of series resistance at a temperature t, use the following equation: r s (t) r s (25 o c)*[1+ ? r s / ? t)*(t-25)] 9) beam divergence is defined as the total included angle between the 1/e 2 intensity points. 10) these specifications are for the to-46 component alone. reflections introduced by any subsequent higher level assembly may affect these values. 11) monitor current tracking is defined as follows: typical performance curves e mitted power vs. c urrent : power varies approximately linearly with current above threshold. t hreshold c urrent vs. t emperature : threshold current varies parabolically with temperature; thus it can be nearly constant for a limited temperature range. current emitted power pmax typical operating current / power i th threshold current temperature t min , i min i th i min [1.110 -4 (t-t min ) 2 +1] 0.45mw / 0.45mw) (p i 0.75mw / 0.75mw) (p i deltrk o pd o pd = = =
hfe409x-341 mounting dimensions (for reference only): all dimensions are in inches. mounting dimensions hf e 4093-342 hf e 4094-342 number function number function 1 k ld 1 a ld 2 k pd , a ld 2 k ld , a pd 3 a pd 3 k pd pinout pinout definitions a ld vcsel anode a pd monitor photodiode anode k ld vcsel cathode k pd monitor photodiode cathode
?2007 finisar corporation. all rights reserved. finisar is a regi stered trademark of finisar corporation. features and specific ations are subject to change without notice. 1/07 phone : 1-866-my-vcsel usa (toll free) 1-214-509-2700 usa (direct dial) 44 (0) 174 336 5533 europe 886-935-409898 china & taiwan 81-90-4437-1130 japan 82-11-220-6153 asia pacific & korea fa x: 1-214-509-3709 usa email: support@adopco.com web: www.finisar.com/aoc.php advanced optical components finisars advanced optical components division was formed through strategic acquisition of key optical compon- ent suppliers. the company has led the industry in high volume vertical cavity surface emitting laser (vcsel) and associated detector technology since 1996. vcsels have become the primary laser source for optical data communi- cation, and are rapidly expanding into a wide variety of sensor applications. vcsels superior reliability, low drive current, high coupled power, narrow and circularly symmetric beam and versatile packaging options (including arrays) are enabling solutions not possible with other optical technologies. advanced optical components is also a key supplier of fabrey-perot (fp) and distributed feedback (dfb) lasers, and optical isolators (oi) for use in single mode fiber data and telecommunications networks location allen, tx - business unit headquarters, vcsel wafer growth, wafer fabrication and to package assembly. fremont, ca C wafer growth and fabrication of 1310 to 1550nm fp and dfb lasers. shanghai, prc C optical passives assembly, including optical isolators and splitters. sales and service finisars advanced optical components division serves its customers through a worldwide network of sales offices and distributors. for application assistance, current specifications, pricing or name of the nearest authorized distributor, contact a nearby sales office or call the number listed below. aoc capabilities advanced optical components advanced capabilities include: 1, 2, 4, 8, and 10gbps serial vcsel solutions 1, 2, 4, 8, and 10gbps serial sw detector solutions vcsel and detector arrays 1, 2, 4, 8, and 10gbps fp and dfb solutions at 1310 and 1550nm 1, 2, 4, 8, and 10gbps serial lw detector solutions optical isolators from 1260 to 1600nm range laser packaging in to46, to56, and optical subassemblies with sc, lc, and mu interfaces for communication networks vcsels operating at 670nm, 780nm, 980nm, and 1310nm in development sensor packages include surface mount, various plastics, chip on board, chipscale packages, etc. custom packaging options hfe409x-341 2.5gbps 850nm vcsel to-46 package
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