BPW82 vishay telefunken 1 (5) rev. 2, 20-may-99 www.vishay.com document number 81529 silicon pin photodiode description BPW82 is a high speed and high sensitive pin photo- diode in a flat side view plastic package. the epoxy package itself is an ir filter, spectrally matched to gaas or gaalas ir emitters ( p 800 nm). the large active area combined with a flat case gives a high sensitivity at a wide viewing angle. features large radiant sensitive area (a=7.5 mm 2 ) wide angle of half sensitivity j = 65 high radiant sensitivity fast response times small junction capacitance plastic case with ir filter suitable for near infrared radiation especially for gaalas emitters with p =870nm 94 8480 applications high speed photo detector absolute maximum ratings t amb = 25 c parameter test conditions symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c storage temperature range t stg 55...+100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ambient r thja 350 k/w
BPW82 vishay telefunken 2 (5) rev. 2, 20-may-99 www.vishay.com document number 81529 basic characteristics t amb = 25 c parameter test conditions symbol min typ max unit breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 10 v, e = 0 i ro 2 30 na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 70 pf v r = 3 v, f = 1 mhz, e = 0 c d 25 40 pf open circuit voltage e e = 1 mw/cm 2 , = 870 nm v o 350 mv short circuit current e e = 1 mw/cm 2 , = 870 nm i k 38 a reverse light current e e = 1 mw/cm 2 , = 870 nm, v r = 5 v i ra 43 45 a angle of half sensitivity j 65 deg wavelength of peak sensitivity p 950 nm range of spectral bandwidth 0.5 790...1050 nm noise equivalent power v r = 10 v, = 870 nm nep 4x10 14 w/ hz rise time v r = 10 v, r l = 1k , = 820 nm t r 100 ns fall time v r = 10 v, r l = 1k , = 820 nm t f 100 ns typical characteristics (t amb = 25 c unless otherwise specified) 20 40 60 80 1 10 100 1000 i reverse dark current ( na ) ro t amb ambient temperature ( c ) 100 94 8403 v r =10v figure 1. reverse dark current vs. ambient temperature 020 40 6080 0.6 0.8 1.0 1.2 1.4 i relative reverse light current ra rel t amb ambient temperature ( c ) 100 94 8409 v r =5v =950nm figure 2. relative reverse light current vs. ambient temperature
BPW82 vishay telefunken 3 (5) rev. 2, 20-may-99 www.vishay.com document number 81529 0.01 0.1 1 0.1 1 10 100 1000 i reverse light current ( a ) ra e e irradiance ( mw / cm 2 ) 10 94 8414 v r =5v =950nm figure 3. reverse light current vs. irradiance 0.1 1 10 1 10 100 v r reverse voltage ( v ) 100 94 8415 i reverse light current ( a ) ra 1 mw/cm 2 0.5 mw/cm 2 0.2 mw/cm 2 0.1 mw/cm 2 0.05 mw/cm 2 0.02 mw/cm 2 =950nm figure 4. reverse light current vs. reverse voltage 0.1 1 10 0 20 40 60 80 c diode capacitance ( pf ) d v r reverse voltage ( v ) 100 94 8407 e=0 f=1mhz figure 5. diode capacitance vs. reverse voltage 750 850 950 1050 0 0.2 0.4 0.6 0.8 1.2 s ( ) relative spectral sensitivity rel wavelength ( nm ) 1150 94 8426 1.0 figure 6. relative spectral sensitivity vs. wavelength 0.4 0.2 0 0.2 0.4 s relative sensitivity rel 0.6 94 8406 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 figure 7. relative radiant sensitivity vs. angular displacement
BPW82 vishay telefunken 4 (5) rev. 2, 20-may-99 www.vishay.com document number 81529 dimensions in mm 96 12195
BPW82 vishay telefunken 5 (5) rev. 2, 20-may-99 www.vishay.com document number 81529 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay-telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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