MG300Q2YS60A 2003-08-05 1 toshiba igbt module silicon n channel igbt MG300Q2YS60A (1200v/300a 2in1) high power switching applications motor control applications ? integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) ? the electrodes are isolated from case. ? low thermal resistance ? v ce (sat) = 2.4 v (typ.) equivalent circuit signal terminal 1. g (l) 2. f o (l) 3. e (l) 4. v d 5. g (h) 6. f o (h) 7. e (h) 8. open 5 6 7 1 2 3 e1/c2 1 e2 f o f o ot 4
MG300Q2YS60A 2003-08-05 2 package dimensions: 2-123c1b 1. g (l) 2. f o (l) 3. e (l) 4. v d 5. g (h) 6. f o (h) 7. e (h) 8. open signal terminal layout 1. g (l) 2. f o (l) 3. e (l) 4. v d 5. g (h) 6. f o (h) 7. e (h) 8. open weight: 375 g 2.54 8 6 7 5 2.54 25.4 0.6 2.54 4 2 3 1
MG300Q2YS60A 2003-08-05 3 maximum ratings (ta = 25c) stage characteristics symbol rating unit collector-emitter voltage v ces 1200 v gate-emitter voltage v ges 20 v dc i c 300 collector current 1 ms i cp 600 a dc i f 300 forward current 1 ms i fm 600 a inverter collector power dissipation (tc = 25c) p c 2800 w control voltage (ot) v d 20 v fault input voltage vf o 20 v control fault input current if o 20 ma junction temperature t j 150 c storage temperature range t stg ? 40~125 c operation temperature range t ope ? 20~100 c isolation voltage v isol 2500 (ac 1 min) v module screw torque ? 3 (m5) n ? m electrical characteristics (t j = 25c) 1. inverter stage characteristics symbol test condition min typ. max unit v ge = 20 v, v ce = 0 ? ? + 3/ ? 4ma gate leakage current i ges v ge = + 10 v, v ce = 0 ? ? 100 na collector cut-off current i ces v ce = 1200 v, v ge = 0 ? ? 1.0 ma gate-emitter cut-off voltage v ge (off) v ce = 5 v, i c = 300 ma 6.0 7.0 8.0 v tj = 25c ? 2.4 2.8 collector-emitter saturation voltage v ce (sat) v ge = 15 v, i c = 300 a tj = 125c ? ? 3.2 v input capacitance c ies v ce = 10 v, v ge = 0, f = 1 mhz ? 21000 ? pf turn-on delay time t d (on) 0.10 ? 1.00 turn-off time t off ? ? 2.00 switching time fall time t f ? ? 0.50 reverse recovery time t rr v cc = 600 v, i c = 300 a v ge = 15 v, r g = 6.8 ? (note 1) ? ? 0.50 s forward voltage v f i f = 300 a ? 2.1 2.6 v note 1: switching time te st circuit & timing chart 2. control (tc = 25c) characteristics symbol test condition min typ. max unit fault output current oc v ge = 15 v 360 ? ? a over temperature ot ? 100 ? 125 c fault output delay time t d (fo) v cc = 600 v, v ge = 15 v ? ? 8 s
MG300Q2YS60A 2003-08-05 4 3. module (tc = 25c) characteristics symbol test condition min typ. max unit inverter igbt stage ? ? 0.044 junction to case thermal resistance r th (j-c) inverter frd stage ? ? 0.068 c/w case to fin thermal resistance r th (c-f) with silicon compound ? 0.013 ? c/w switching time test circuit timing chart i c r g r g l i f ? v ge v cc t d (on) t d (off) t r r 90% 90% 10% 10% t f i c v ge 10% i r r 90% i rr 20% i rr
MG300Q2YS60A 2003-08-05 5 remark short circuit capability is 6 s after fault output signal. please keep following condition to use fault output signal. ? v cc < = 750 v ? 14.8 v < = v ge < = 17.0 v ? r g > = 6.8 ? ? t j < = 125c to use this product, v ge must be provided higher than 14.8 v. in case v ge is less than 14.8 v, fault signal f o may not be output even under error conditions. characteristics symbol min typ. max unit p-n power terminal supply voltage v cc ? 600 750 v gate voltage v ge 14.8 15 17 v gate resistance r g 6.8 ? ? ? switching frequency fc ? ? 20 khz
MG300Q2YS60A 2003-08-05 6 collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge gate-emitter voltage v ge (v) v ce ? v ge gate-emitter voltage v ge (v) i c ? v ge collector current i c (a) 0 0 1 5 100 300 400 500 2 3 4 200 600 8 v common emitter t j = 25c v ge = 20 v 12 v 15 v 9 v 10 v 0 0 1 5 100 300 400 500 2 3 4 200 600 v ge = 20 v 15 v common emitter t j = 125c 12 v 10 v 9 v 8 v 0 0 5 10 15 20 2 4 6 8 10 12 i c = 600 a common emitter t j = 25c 300 a 150 a 0 0 5 10 15 20 2 4 6 8 10 12 i c = 600 a common emitter t j = 125c 300 a 150 a 0 0 5 10 15 20 2 4 6 8 10 12 i c = 600 a common emitter t j = ? 40c 300 a 150 a 0 0 4 8 12 100 300 400 600 25c t j = 125c ? 40c 200 500 common emitter v ce = 5 v
MG300Q2YS60A 2003-08-05 7 sw time (ns) sw loss e on , e off (mj) forward voltage v f (v) i f ? v f forward current i f (a) gate-emitter voltage v ge (v) charge q g (nc) v ce , v ge ? q g collector-emitter voltage v ce (v) gate resistance r g ( ? ) sw time ? r g sw time (ns) gate resistance r g ( ? ) e on , e off ? r g collector current i c (a) sw time ? i c collector current i c (a) e on , e off ? i c sw loss e on , e off (mj) 0 0 500 1000 1500 2500 200 400 600 800 1000 0 4 8 12 16 20 2000 v ce = 0 v 200 v 600 v 400 v common emitter r l = 2 ? t j = 25c 10 5 0 10 15 20 25 1000 100 10000 t off t f t r t d (on) t on t d (off) common emitter v cc = 600 v i c = 300 a t j = 25c v ge = 15 v t j = 125c 10 0 100 1000 5 10 15 20 25 e off e on common emitter v cc = 600 v i c = 300 a t j = 25c v ge = 15 v t j = 125c 10 0 50 150 250 300 100 1000 10000 100 200 common emitter v cc = 600 v r g = 6.8 ? t j = 25c v ge = 15 v t j = 125c t on t d ( on ) t off t d (off) t f t r 1 0 50 150 200 300 10 100 e off e on common emitter v cc = 600 v r g = 6.8 ? t j = 25c v ge = 15 v t j = 125c 100 250 0 0 1 5 100 300 400 500 2 3 4 200 600 125c t j = 25c ? 40c common cathode v ge = 0 v
MG300Q2YS60A 2003-08-05 8 collector current i c (a) collector current i c (a) forward current i f (a) i rr , t rr ? i f reverse recovery time t rr (ns) reverse recovery current i rr (a) forward current i f (a) e dsw ? i f reverse recovery loss e dsw (mj) collector-emitter voltage v ce (v) c ? v ce capacitance c (pf) collector-emitter voltage v ce (v) safe-operating area collector-emitter voltage v ce (v) reverse bias soa pulse width t w (s) r th ? t w r th (j-c) (c/w) 10 0 50 150 200 300 100 1000 100 250 t r r i r r common cathode v cc = 600 v r g = 6.8 ? t j = 25c v ge = 15 v t j = 125c 100 0.01 0.1 1 10 100 1000 10000 100000 c ies c oes c res common emitter v ge = 0 v f = 1 mhz t j = 25c 1 0 10 100 1000 400 800 1200 t j < = 125c r g = 6.8 ? v ge = 15 v 0.1 0 50 150 250 300 1 10 100 100 200 common cathode v cc = 600 v r g = 6.8 ? t j = 25c v ge = 15 v t j = 125c 0.001 0.001 0.01 0.1 1 10 0.01 0.1 1 diode stage transistor stage tc = 25c 3 1 10 100 1000 10000 10 100 1000 i c max (continuous) i c max (pulsed) * * : single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in tem p erature. dc operation 1 ms ? 50 s ? 100 s ?
MG300Q2YS60A 2003-08-05 9 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inhe rent electrical sensitivity and vulnerability to physical stress. it is the responsibility of t he buyer, when utilizing toshiba products , to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within s pecified operating ranges as set forth in the most recent toshi ba products specifications. also, pl ease keep in mind the precautions and conditions set forth in the ?handling guide for semicond uctor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are inte nded for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunc tion or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control in struments, airplane or spaceship instruments, transportation instruments, traffic signa l instruments, combusti on control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in this document shall be made at th e customer?s own risk. ? toshiba products should not be embedded to the down stream products which are prohibited to be produced and sold, under any law and regulations. 030619ea a restrictions on product use
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