MG300Q2YS61 2002-08-29 1 toshiba igbt module silicon n channel igbt MG300Q2YS61 high power switching applications motor control applications ? high input impedance ? high speed: t f = 0.3 s (max) inductive load ? low saturation voltage: v ce (sat) = 2.6 v (max) ? enhancement-mode ? includes a complete half bridge in one package. ? the electrodes are isolated from case. equivalent circuit maximum ratings (tc = = = = 25c) characteristics symbol rating unit collector-emitter voltage v ces 1200 v gate-emitter voltage v ges 20 v collector current dc (tc = 80c) i c 300 a forward current dc (tc = 80c) i f 300 a collector power dissipation (tc = 25c) p c 2700 w junction temperature t j 150 c storage temperature range t stg ? 40 to 125 c isolation voltage v isol 2500 (ac 1 minute) vrms terminal ? 3 nm screw torque mounting ? 3 nm ? unit: mm ? jedec D jeita D toshiba 2-109c4a weight: 430 g (typ.) g1 e1 e1/c2 c1 e2 g2 e2
MG300Q2YS61 2002-08-29 2 electrical characteristics (ta = = = = 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge = 20 v, v ce = 0 v ? ? 500 na collector cut-off current i ces v ce = 1200 v, v ge = 0 v ? ? 1 ma gate-emitter cut-off voltage v ge (off) i c = 300 ma, v ce = 5v 6.0 7.0 8.0 v tc = 25c ? 2.1 2.6 collector-emitter saturation voltage v ce (sat) i c = 300 a, v ge = 15 v tc = 125c ? 2.7 3.2 v input capacitance c ies v ce = 10 v, v ge = 0 v, f = 1 mhz ? 25000 ? pf turn-on delay time t d (on) ? 0.3 ? rise time t r ? 0.2 ? turn-on time t on ? 0.5 ? turn-off delay time t d (off) ? 0.5 ? fall time t f ? 0.1 0.3 switching time turn-off time t off inductive load v cc = 600 v i c = 300 a v ge = 15 v r g = 2.7 ? (note 1) ? 0.6 ? s tc = 25c ? 2.4 2.8 forward voltage v f i f = 300 a, v ge = 0 v tc = 125c ? 2.2 ? v reverse recovery time t rr i f = 300 a, v ge = ? 15 v, di/dt = 1500 a/ s ? 0.2 ? s transistor stage ? ? 0.045 thermal resistance r th (j-c) diode stage ? ? 0.100 c/w note 1: switching time and reverse recovery time test circuit and timing chart i f 90% i rr 50% i rr i f i r r t rr i c r g r g l i f ? v ge v cc v ce v ge i c 0 0 90% 90% 10% 10% 90% t d (off) t off t f t r t d (on) t on 10%
MG300Q2YS61 2002-08-29 3 < v ce (sat) rank > < v f rank > v ce (sat) v f rank symbol min max rank symbol min max 21 1.80 2.10 d 1.9 2.2 22 1.90 2.20 e 2.1 2.4 23 2.00 2.30 f 2.3 2.6 24 2.10 2.40 g 2.5 2.8 25 2.20 2.50 26 2.30 2.60 27 2.40 2.70 < mark position > toshiba MG300Q2YS61 21d 22e low side hi g h side
MG300Q2YS61 2002-08-29 4 collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) i c ? v ge collector current i c (a) 600 500 400 300 200 100 0 0 2 4 6 8 10 common emitter t j = 25c 20 15 10 v ge = 9 v 12 600 500 400 300 200 100 0 0 2 4 6 8 10 common emitter t j = 125c 20 15 10 v ge = 9 v 12 0 0 5 10 15 20 2 4 6 8 10 12 common emitter t j = 25c i c = 150 a 600 300 0 0 5 10 15 20 2 4 6 8 10 12 common emitter t j = 125c 300 i c = 150 a 600 0 0 5 10 15 20 2 4 6 8 10 12 common emitter t j = ? 40c 600 i c = 150 a 300 common emitter v ce = 5 v 0 0 14 10 6 2 8 4 12 600 300 400 500 100 200 25 t j = 125c ? 40
MG300Q2YS61 2002-08-29 5 switching time (ns) switching loss (mj) forward voltage v f (v) i f ? v f forward current i f (a) gate-emitter voltage v ge (v) charge q g (nc) v ce , v ge ? q g collector-emitter voltage v ce (v) gate resistance r g ( ? ) switching time ? r g switching time (ns) gate resistance r g ( ? ) switching loss ? r g collector current i c (a) switching time ? i c collector current i c (a) switching loss ? i c switching loss (mj) 0 10 100 1000 2 4 6 8 1 0 12 14 1 6 v cc = 600 v i c = 300 a v ge = 15 v ls = 80 nh : t j = 25c : t j = 125c 0 10 4 6 8 1 0 12 14 1 6 2 100 10000 1000 v cc = 600 v i c = 300 a v ge = 15 v ls = 80 nh : t j = 25c : t j = 125c 600 500 400 300 200 100 0 0 1 2 3 4 5 common cathode v ge = 0 125 t j = 25c ? 40 t f t d (on) t d (off) t r t off t on e on e off 10 1000 10000 100 0 50 100 150 200 250 300 v cc = 600 v, r g = 2.7 ? v ge = 15 v, ls = 80 nh : t j = 25c : t j = 125c t r t f t d (off) t off t on t d (on) 1 0 50 100 150 200 250 300 100 10 v cc = 600 v r g = 2.7 ? v ge = 15 v ls = 80 nh : t j = 25c : t j = 125c e off e on 1000 0 800 600 400 200 0 0 500 1000 1500 2000 2500 4 8 12 16 20 common emitter r l = 2 ? t j = 25c v ce = 0 v 600 200 400
MG300Q2YS61 2002-08-29 6 collector current i c (a) collector current i c (a) forward current i f (a) i rr , t rr ? i f peak reverse recovery current i rr (a) reverse recovery time t rr ( s) forward current i f (a) e dsw ? i f reverse recovery loss e d sw (mj) collector-emitter voltage v ce (v) c ? v ce capacitance c (pf) collector-emitter voltage v ce (v) safe operating area collector-emitter voltage v ce (v) reverse bias soa pulse width t w (s) r th (t) ? t w transient thermal resistance r th (j-c) (c/w) 10 0 50 100 150 200 250 300 1000 100 common cathode v cc = 600 v r g = 2.7 ? v ge = 15 v : t j = 25c : t j = 125c t rr i rr 0.1 0 50 100 150 200 250 300 10 1 common cathode v cc = 600 v r g = 2.7 ? v ge = 15 v : t j = 25c : t j = 125c 300 0.1 10000 100000 1000 5000 50000 500 3000 30000 1 10 100 5 50 0.5 30 3 0.3 common emitter f = 1 mhz cies coes cres 1 3 10 30 100 * single nonrepetitive pulse tc = 25c curves must be derated lineary with increase in temperature. 1000 3000 300 3 10 30 100 300 1000 3000 i c max (pulsed) * i c max (continuous) dc operation 100 s * 1 ms * 50 s * 0 200 400 600 t j < = 125c v ge = 15 v r g = 2.7 ? 800 1000 1200 1400 10 100 1000 tc = 25c 0.0003 0.001 0.01 0.1 1 10 0.001 0.003 0.01 0.03 0.1 0.3 1 transistor stage diode stage
MG300Q2YS61 2002-08-29 7 collector-emitter voltage v ce (v) short circuit soa collector current i c (a) 0 200 400 600 800 1000 1200 1400 10 100 1000 10000 v ge = 15 v t w = 10 s t j = 125c
MG300Q2YS61 2002-08-29 8 ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. ? the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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