2008. 9. 23 1/4 semiconductor technical data KRC657E~krc659e epitaxial planar npn transistor revision no : 2 switching application. interface circuit and driver circuit application. features with built-in bias resistors. simplify circuit design. reduce a quantity of parts and manufacturing process. high packing density. dim millimeters a a1 b1 c tesv 1.6 0.05 1.0 0.05 1.6 0.05 1.2 0.05 0.50 0.2 0.05 0.5 0.05 0.12 0.05 b d h j b1 b d a a1 c c j h 1 2 3 5 4 p p p5 + _ + _ + _ + _ + _ + _ + _ 1. q in (base) 2. q , q common (emitter) 3. q in (base) 4. q out (collector) 5. q out (collector) 1 1 1 2 2 2 equivalent circuit maximum rating (ta=25 ) bias resistor values r1 r2 common out in mark spec 123 4 5 lot no. type name 1 q1 23 54 q2 equivalent circuit (top view) type no. r1(k ) r2(k ) KRC657E 10 47 krc658e 22 47 krc659e 47 22 characteristic symbol rating unit output voltage KRC657E 659e v o 50 v input voltage KRC657E v i 30, -6 v krc658e 40, -7 krc659e 40,-15 output current KRC657E 659e i o 100 ma power dissipation p d * 200 mw junction temperature t j 150 storage temperature range t stg -55 150 type KRC657E krc658e krc659e mark nh ni nj * total rating. marking
2008. 9. 23 2/4 KRC657E~krc659e revision no : 2 electrical characteristics (ta=25 ) note : * characteristic of transistor only. characteristic symbol test condition min. typ. max. unit output cut-off current KRC657E 659e i o(off) v o =50v, v i =0 - - 500 na dc current gain KRC657E g i v o =5v, i o =10ma 80 150 - krc658e 80 150 - krc659e 70 140 - output voltage KRC657E 659e v o(on) i o =10ma, i i =0.5ma - 0.1 0.3 v input voltage (on) KRC657E v i(on) v o =0.2v, i o =5ma - 1.2 1.8 v krc658e - 1.8 2.6 krc659e - 3.0 5.8 input votlage (off) KRC657E v i(off) v o =5v, i o =0.1ma 0.5 0.75 - v krc658e 0.6 0.88 - krc659e 1.5 1.82 - transition frequency KRC657E 659e f t * v o =10v, i o =5ma - 200 - mhz input current KRC657E i i v i =5v - - 0.88 ma krc658e - - 0.36 krc659e - - 0.16 switching time rise time KRC657E t r v o =5v, v in =5v r l =1k - 0.05 - s krc658e - 0.12 - krc659e - 0.26 - storage time KRC657E t stg - 2.0 - krc658e - 2.4 - krc659e - 1.5 - fall time KRC657E t f - 0.36 - krc658e - 0.4 - krc659e - 0.41 -
2008. 9. 23 3/4 KRC657E~krc659e revision no : 2 i o - v i(on) input on voltage v i(on) (v) input on voltage v i(on) (v) input on voltage v i(on) (v) 0.1 0.3 1 3 output current i o (ma) output current i o (ma) output current i o (ma) i o - v i(on) i o - v i(on) input off voltage v i(off) (v) output current i o ( a) i o - v i(off) input off voltage v i(off) (v) output current i o ( a) i o - v i(off) 10 30 100 0.3 0.5 1 3 5 10 30 50 v =0.2v o ta=100 c ta=25 c ta=-25 c -25 25 100 ta=-25 c ta=25 c ta=100 c o v =0.2v 50 30 10 5 3 1 0.5 0.3 100 30 10 3 1 0.3 0.1 ta=-25 c ta=25 c ta=100 c o v =0.2v 50 30 10 5 3 1 0.5 0.3 100 30 10 3 1 0.3 0.1 KRC657E krc658e krc659e o v =5v krc658e 3k 1k 500 300 100 50 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 30 o v =5v krc659e 3k 1k 500 300 100 50 3.0 2.6 2.2 1.8 1.4 1.0 0.6 0.2 30 t a =100 c ta=25 c ta=-25 c 3.4 t a=100 c ta=25 c ta=-25 c input off voltage v i(off) (v) output current i o ( a) i o - v i(off) o v =5v KRC657E 3k 1k 500 300 100 50 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 30 ta=100 c ta=25 c ta=-25 c
2008. 9. 23 4/4 KRC657E~krc659e revision no : 2 g i - i o output current i o (ma) output current i o (ma) output current i o (ma) 1310 30 dc current gain g i dc current gain g i dc current gain g i g i - i o g i - i o 100 30 50 100 300 500 1k KRC657E krc658e 1k 500 300 100 50 20 v =5v o ta=100 c ta=25 c ta=-25 c 13 10 30 100 1k 500 300 100 50 20 100 30 10 3 1 krc659e o v =5v ta=100 c ta=25 c ta=-25 c o v =5v ta=100 c ta=25 c ta=-25 c
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