specifications and information are subject to change without notice. wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 1 of 5 july 2006 AH1 high dynamic range amplifier product information the communications ed g e tm product features ? 250 ? 4000 mhz ? +41 dbm oip3 ? 3 db noise figure ? 13.5 db gain ? +22 dbm p1db ? lead-free/green/ rohs-compliant sot-89 package ? single +5 v supply ? mttf > 100 years applications ? mobile infrastructure ? catv / dbs ? w-lan / wi-bro / wimax ? rfid ? defense / homeland security ? fixed wireless product description the AH1 is a high dynamic range amplifier in a low-cost surface-mount package. the combination of low noise figure and high output ip3 at the same bias point makes it ideal for receiver and transmitter applications. the device combines dependable performance with superb quality to maintain mttf values exceeding 100 years at mounting temperatures of +85 c. the AH1 is available in the environmentally-friendly lead-free/green/rohs-compliant sot-89 package. the broadband amplifier uses a high reliability gaas mmic technology and is target ed for applications where high linearity is required. it is well suited for various current and next generation wi reless technologies such as gprs, gsm, cdma, and w-cd ma. in addition, the AH1 will work for other applications within the 250 to 4000 mhz frequency range such as fixed wireless, w- lan, and wibro. functional diagram rf in gnd rf out gnd 1 23 4 function pin no. input 1 output/bias 3 ground 2, 4 specifications (1) parameter units min typ max operational bandwidth mhz 250 4000 test frequency mhz 800 gain db 12.4 13.5 input return loss db 8 output return loss db 15 output p1db dbm +21.7 output ip3 (2) dbm +37 +41 noise figure (3) db 3.0 operating current range ma 120 150 180 supply voltage v 5 1. test conditions unless otherwise noted: t = 25 oc, 50 system. 2. 3oip measured with two tones at an output power of +5 dbm/tone separated by 10 mhz. the suppression on the largest im3 product is used to calculate the 3oip using a 2:1 rule. 3. noise figure can be optimized by matchi ng the input for optimal return loss. absolute maximum rating parameter rating operating case temperature -40 to +85 c storage temperature -55 to +150 c supply voltage +6 v rf input power (continuous) +10 dbm junction temperature +220 c operation of this device above any of th ese parameters may cause permanent damage. typical performance (4) parameter units typical frequency mhz 900 1900 2140 s21 db 14.2 12.2 12.0 s11 db -21 -14 -21 s22 db -14 -13 -11 output p1db dbm +21.7 +22 +22 output ip3 (2) dbm +42 +41 +40 is-95 channel power (5) db +15.5 +16.5 noise figure db 3.2 3.3 3.3 supply voltage v 5 device current ma 150 4. parameters reflect performance in an AH1-pcb application circuit, as shown on page 3. 5. measured with -45 dbc acpr, is-95 9 channels fwd. ordering information part no. description AH1-g high dynamic range amplifier (lead-free/green/rohs-c ompliant sot-89 pkg) AH1-pcb 0.8 ? 2.5 ghz fully assembled application circuit
specifications and information are subject to change without notice. wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 2 of 5 july 2006 AH1 high dynamic range amplifier product information the communications ed g e tm typical device data s-parameters (v ds = +5 v, i ds = 150 ma, t = 25 c, unmatched device in a 50 ohm system) input return loss can be improved with the appropriate input matching netw ork shown later in this datasheet. gain vs. output power 9 10 11 12 13 14 0 5 10 15 20 output power (dbm) 100% idss 75% idss 50% idss output ip3 vs. output power 20 25 30 35 40 45 0 5 10 15 20 output power (dbm) 100% idss 75% idss 50% idss 900 mhz gain vs. frequency 0 5 10 15 20 0 500 1000 1500 2000 2500 3000 frequency (mhz) return loss vs. frequency -30 -25 -20 -15 -10 -5 0 0 500 1000 1500 2000 2500 3000 frequency (mhz) s11 s22 w/o matching circuitry s-parameters (v d = +5 v, i d = 150 ma, t = 25 c, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -2.65 -29.52 17.80 164.25 -24.29 45.18 -8.25 -39.80 250 -7.97 -44.15 15.28 158.50 -21.31 6.75 -19.01 -65.37 500 -8.57 -60.61 14.91 147.54 -21.11 -3.83 -25.15 -69.25 750 -8.47 -80.72 14.60 134.66 -21.11 -10.90 -29.26 -84.69 1000 -8.24 -100.99 14.22 121.38 -21.21 -17.00 -30.76 -115.12 1250 -7.79 -120.81 13.80 108.59 -21.21 -23.01 -29.83 -88.78 1500 -7.18 -138.15 13.27 96.13 -21.41 -28.54 -29.30 -94.19 1750 -6.55 -152.70 12.69 84.26 -21.62 -33.67 -29.12 -136.07 2000 -6.03 -164.30 12.11 73.25 -21.83 -38.35 -28.24 -112.00 2250 -5.69 -173.54 11.57 62.88 -21.99 -42.48 -26.58 -97.44 2500 -5.55 176.22 11.12 52.70 -22.10 -46.41 -25.60 -90.19 2750 -5.68 166.67 10.76 42.57 -22.16 -50.57 -26.12 -87.80 3000 -5.86 153.06 10.40 31.81 -22.27 -55.21 -29.48 -82.67 device s-parameters are available for download off of the website at: http://www.wj.com vswr=2 vswr=3 vswr=4 vswr=5 ip3=41 ip3=38 ip3=37 ip3=36 ip3=35 ip3=39 vswr=1.5 oip3 load pull circles 900 mhz
specifications and information are subject to change without notice. wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 3 of 5 july 2006 AH1 high dynamic range amplifier product information the communications ed g e tm application circuit: 800 ? 2500 mhz (AH1-pcb) typical rf performance at 25 c frequency mhz 900 1900 2140 s21 ? gain db 14.2 12.2 12.0 s11 ? input r.l. db -21 -14 -21 s22 ? output r.l. db -14 -13 -11 output p1db dbm +21.7 +22 +22 output ip3 (+5 dbm / tone, 10 mhz spacing) dbm +42 +41 +40 is-95 channel power (@-45 dbc acpr, 9 channels fwd) dbm +15.5 +16.5 noise figure db 3.2 3.3 3.3 device bias +5v @ 150ma c= id= 56 pf c2 c= id= 56 pf c6 c= id= 56 pf c5 l= id= 12 nh c4 l= id= 5.6 nh c3 f0= el= z0= 0.9 ghz 15.2 deg 22 ohm net= id= "AH1" q1 vcc = +5 v all passive components are of size 0603 unless otherwise noted. configuration. component c1 is shown in the silkscreen but is not used for this circuit board material: .062? total thickness with a .014? fr-4 top rf layer, 4 layers (other layers added for rigidity), 1 oz copper, 50 microstrip line details: width = .025?. gain 10 11 12 13 14 15 750 1000 1250 1500 1750 2000 2250 frequency (mhz) return loss -30 -25 -20 -15 -10 -5 0 750 1000 1250 1500 1750 2000 2250 frequency (mhz) s11 s22 acpr vs. channel power is-95, 9 ch. fwd, 885 khz offset, 30 khz meas bw, 900 mhz -70 -60 -50 -40 10 11 12 13 14 15 16 17 output channel power (dbm) acpr vs. channel power is-95, 9 ch. fwd, 885 khz offset, 30 khz meas bw, 1900 mhz -70 -60 -50 -40 10 11 12 13 14 15 16 17 output channel power (dbm)
specifications and information are subject to change without notice. wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 4 of 5 july 2006 AH1 high dynamic range amplifier product information the communications ed g e tm 250 - 650 mhz reference design freq. mhz 250 450 650 gain db 14.8 14.5 13.8 s11 db -10 -36 -11 s22 db -19 -17 -13 p1db dbm +22 oip3 dbm +42 nf db 2.8 2.8 3.2 bias +5v @ 150ma 0.2 0.3 0.4 0.5 0.6 0.7 frequency (ghz) gain / return loss 11 12 13 14 15 16 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (sb) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) c=1000 pf l=82 nh c=1000 pf l=15 nh net="AH1" +5v 900 mhz reference design freq. mhz 800 900 1000 gain db 13.7 13.7 13.6 s11 db -13 -16 -18 s22 db -13 -14 -15 p1db dbm +22 oip3 dbm +41 nf db 2.5 bias +5v @ 150ma 0.7 0.8 0.9 1 1.1 frequency (ghz) gain / return loss 10 11 12 13 14 15 gain (db) -25 -20 -15 -10 -5 0 s11, s22 (db) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) c=100 pf c=100 pf c=100 pf l=12 nh l=100 nh net="AH1" +5 v 2350 mhz reference design freq. ghz 2.3 2.35 2.4 gain db 12.0 12.0 11.9 s11 db -24 -40 -25 s22 db -12 -13 -14 p1db dbm +22 oip3 dbm +41 nf db 3.7 bias +5v @ 150ma 2.1 2.2 2.3 2.4 2.5 2.6 frequency (ghz) gain / return loss 8 9 10 11 12 13 gain (db) -25 -20 -15 -10 -5 0 s11 , s22 ( sb ) db(|s(2,1)|) (l) db(|s(1,1)|) (r) db(|s(2,2)|) (r) c=56 pf l=22 nh c=1.2 pf tlinp z0=50 ohm l=250 mil eeff=3.4 loss=0 f0=0 ghz c=56 pf net="AH1" +5v 3500 mhz reference design freq. ghz 3.3 3.5 3.8 gain db 9.8 9.9 9.5 s11 db -10 -18 -14 s22 db -16 -17 -16 p1db dbm +21.6 oip3 dbm +41 nf db 4.8 4.3 4.1 bias +5v @ 150ma 3 3.2 3.4 3.6 3.8 4 frequency (ghz) gain / return loss 6 7 8 9 10 11 gain (db) -25 -20 -15 -10 -5 0 s11 , s22 , ( db ) db(|s(1,1)|) (r) db(|s(2,2)|) (r) db(|s(2,1)|) (l) c=18 pf l=12 nh tlinp z0=80 ohm l=50 mil eeff=3.4 loss=0 f0=0 ghz c=1 pf c=18 pf net="AH1" +5v
specifications and information are subject to change without notice. wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com page 5 of 5 july 2006 AH1 high dynamic range amplifier product information the communications ed g e tm AH1-g (green / lead-free sot -89 package) mechanical information this package is lead-free/green/ro hs-compliant. it is compatible with both lead- free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the plating material on the leads is nipdau. outline drawing land pattern thermal specifications parameter rating operating case temperature -40 to +85 c thermal resistance, rth (1) 59 c / w junction temperature, tj (2) 129 c 1. the thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. this corresponds to the typical biasing condition of +5v, 150 ma at an 85 c case temperature. a minimum mttf of 1 million hours is achieved for junction temperatures below 160 c. product marking the AH1-g will be mark ed with an ?AH1g? designator. an alphanumeric lot code (?xxxx-x?) is also ma rked below the part designator on the top surface of the package. the obsolete tin-lead package is marked with an ?AH1? designator followed by an alphanumeric lot code. tape and reel specifications for this part are located on the website in the ?application notes? section. msl / esd rating esd rating: class 1b value: passes 500v to <1000v test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes 1000v to <2000v test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 3 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. ground / thermal vias are critical for the proper performance of this device. vias should use a .35mm (#80 / .0135?) diameter drill and have a final plated th ru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. mounting screws can be added near the part to fasten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 4. do not put solder mask on the backside of the pc board in the region where the board contacts the heatsink. 5. rf trace width depends upon the pc board material and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). angles are in degrees. mttf vs. gnd tab temperature 1 10 100 1000 60 70 80 90 100 110 tab temperature (c) mttf ( million hrs )
|
