515a inverter grade thyristors hockey puk version st303c..l series bulletin i25186 rev. b 04/00 case style to-200ac (b-puk) typical applications inverters choppers induction heating all types of force-commutated converters features metal case with ceramic insulator international standard case to-200ac (b-puk) all diffused design center amplifying gate guaranteed high dv/dt guaranteed high di/dt high surge current capibility low thermal impedance high speed performance (*) t q = 10 to 20s for 400 to 800v devices t q = 15 to 30s for 1000 to 1200v devices i t(av) 515 a @ t hs 55 c i t(rms) 995 a @ t hs 25 c i tsm @ 50hz 7950 a @ 60hz 8320 a i 2 t@ 50hz 316 ka 2 s @ 60hz 289 ka 2 s v drm /v rrm 400 to 1200 v t q range (*) 10 to 30 s t j - 40 to 125 c parameters st303c..l units major ratings and characteristics document number: 93675 www.vishay.com 1
st303c..l series bulletin i25186 rev. b 04/00 voltage v drm /v rrm , maximum v rsm , maximum i drm /i rrm max. type number code repetitive peak voltage non-repetitive peak voltage @ t j = t j max. vvm a 04 400 500 08 800 900 10 1000 1100 12 1200 1300 frequency units 50hz 1130 950 1800 1540 5660 4990 400hz 1010 820 1850 1570 2830 2420 1000hz 680 530 1560 1300 1490 1220 2500hz 230 140 690 510 540 390 recovery voltage vr 50 50 50 50 50 50 voltage before turn-on vd v drm v drm v drm rise of on-state current di/dt 50 50 - - - - a/ s heatsink temperature 40 55 40 55 40 55 c equivalent values for rc circuit 10 ? / 0.47f 10 ? / 0.47f 10 ? / 0.47f electrical specifications voltage ratings i t(av) max. average on-state current 515 (190) a 180 conduction, half sine wave @ heatsink temperature 55 (85) c double side (single side) cooled i t(rms) max. rms on-state current 995 dc @ 25 c heatsink temperature double side cooled i tsm max. peak, one half cycle, 7950 t = 10ms no voltage non-repetitive surge current 8320 a t = 8.3ms reapplied 6690 t = 10ms 100% v rrm 7000 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 316 t = 10ms no voltage initial t j = t j max 289 t = 8.3ms reapplied 224 t = 10ms 100% v rrm 204 t = 8.3ms reapplied i 2 t maximum i 2 t for fusing 3160 ka 2 s t = 0.1 to 10ms, no voltage reapplied parameter st303c..l units conditions on-state conduction ka 2 s i tm 180 o el 180 o el 100 s i tm i tm current carrying capability v a st303c..l 50 document number: 93675 www.vishay.com 2
st303c..l series bulletin i25186 rev. b 04/00 v tm max. peak on-state voltage 2.16 i tm = 1255a, t j = t j max, t p = 10ms sine wave pulse v t(to)1 low level value of threshold voltage v t(to)2 high level value of threshold voltage r t 1 low level value of forward slope resistance r t 2 high level value of forward slope resistance i h maximum holding current 600 t j = 25 c, i t > 30a i l typical atching current 1000 t j = 25 c, v a = 12v, ra = 6 i g = 1a parameter st303c..l units conditions on-state conduction 1.44 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 1.48 (i > x i t(av) ), t j = t j max. v 0.57 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.56 (i > x i t(av) ), t j = t j max. m ma di/dt max. non-repetitive rate of rise t j = t j max, v drm = rated v drm of turned-on current i tm = 2 x di/dt t j = 25 c, v dm = rated v drm , i tm = 50a dc, t p = 1s resistive load gate pulse: 10v, 5 source t j = t j max, i tm = 550a, commutating di/dt = 40a/s v r = 50v, t p = 500s, dv/dt: see table in device code switching parameter st303c..l units conditions 1000 a/s t d typical delay time 0.83 min max dv/dt maximum critical rate of rise of t j = t j max. linear to 80% v drm , higher value off-state voltage available on request i rrm max. peak reverse and off-state i drm leakage current parameter st303c..l units conditions blocking 500 v/ s 50 ma t j = t j max, rated v drm /v rrm applied p gm maximum peak gate power 60 p g(av) maximum average gate power 10 i gm max. peak positive gate current 10 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage i gt max. dc gate current required to trigger v gt max. dc gate voltage required to trigger i gd max. dc gate current not to trigger 20 ma v gd max. dc gate voltage not to trigger 0.25 v triggering parameter st303c..l units conditions 20 5 vt j = t j max, t p 5ms 200 ma 3v t j = 25 c, v a = 12v, ra = 6 t j = t j max, rated v drm applied s (*) t q = 10 to 20s for 400 to 800v devices; t q = 15 to 30s for 1000 to 1200v devices. 10 30 wt j = t j max, f = 50hz, d% = 50 t q max. turn-off time (*) document number: 93675 www.vishay.com 3
st303c..l series bulletin i25186 rev. b 04/00 ordering information table 5 68 9 st 30 3 c 12 l h k 1 34 7 device code 1 2 10 1 - thyristor 2 - essential part number 3 - 3 = fast turn off 4 - c = ceramic puk 5 - voltage code: code x 100 = v rrm (see voltage rating table) 6 - l = puk case to-200ac (b-puk) 7 - reapplied dv/dt code (for t q test condition) 8 -t q code 9 - 0 = eyelet term. (gate and aux. cathode unsoldered leads) 1 = fast-on term. (gate and aux. cathode unsoldered leads) 2 = eyelet term. (gate and aux. cathode soldered leads) 3 = fast-on term. (gate and aux. cathode soldered leads) - critical dv/dt: none = 500v/sec (standard value) l = 1000v/sec (special selection) up to 800v dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 t q (s) 10 cn dn en fn * hn 12 cm dm em fm hm 15 cl dl el fl * hl 20 ck dk ek fk * hk t q (s) 15 cl -- -- -- -- 18 cp dp -- -- -- 20 ck dk ek fk * hk 25 cj dj ej fj * hj 30 -- dh eh fh hh 10 * standard part number. all other types available only on request. only for 1000/1200v t j max. operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thj-hs max. thermal resistance, 0.11 dc operation single side cooled junction to heatsink 0.05 dc operation double side cooled r thc-hs max. thermal resistance, 0.011 dc operation single side cooled case to heatsink 0.005 dc operation double side cooled f mounting force, 10% 9800 n (1000) (kg) wt approximate weight 250 g parameter st303c..l units conditions k/w thermal and mechanical specification c k/w case style to - 200ac (b-puk) see outline table single side double side single side double side 180 0.012 0.010 0.008 0.008 t j = t j max. 120 0.014 0.015 0.014 0.014 90 0.018 0.018 0.019 0.019 k/w 60 0.026 0.027 0.027 0.028 30 0.045 0.046 0.046 0.046 sinusoidal conduction rectangular conduction conduction angle units conditions r thj-hs conduction (the following table shows the increment of thermal resistence r thj-hs when devices operate at different conduction angles than dc) document number: 93675 www.vishay.com 4
st303c..l series bulletin i25186 rev. b 04/00 fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics 40 50 60 70 80 90 100 110 120 130 0 50 1 00 15 0 2 00 2 50 3 0 0 35 0 30 60 90 1 20 180 a ve rage on -state curren t (a) conduction angle m aximum allowable heatsink tem perature (c) st303c ..l series ( s in g l e s i d e c o o le d ) r (d c ) = 0.11 k/w th j- hs 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 dc 30 60 90 120 18 0 average o n-state c urren t (a) conduction period m aximum allow able heatsink tem perature ( c) st303c ..l serie s (single side cooled) r (d c ) = 0.11 k/w th j-hs outline table two places pin receptacle amp. 60598-1 0.7 (0.03) min. 34 (1.34) dia. max. 53 (2.09) dia. max. 5 8 .5 (2 .3 ) d i a . m ax . 2 holes dia. 3.5 (0.14) x 2.5 (0.1) deep 4.7 (0.18) 27 (1.06) max . 0.7 (0.03) min. 6.2 (0.24) min. 20 5 36.5 (1.44) crepage distance 36.33 (1.430) min. strike distance 17.43 (0.686) min. case style to-200ac (b-puk) all dimensions in millimeters (inches) quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) document number: 93675 www.vishay.com 5
st303c..l series bulletin i25186 rev. b 04/00 fig. 8 - maximum non-repetitive surge current single and double side cooled fig. 7 - maximum non-repetitive surge current single and double side cooled fig. 6 - on-state power loss characteristics fig. 5 - on-state power loss characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 dc 30 60 90 120 180 a ve ra g e o n -sta te c urre nt (a) conduction period maxim um allowable heatsink temp erature ( c) st30 3c ..l se rie s (d ouble side c ooled) r (d c ) = 0.05 k/w th j- hs 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 30 60 90 120 180 average on-state curren t (a) con duction angle maxim um allowable heatsink temperature ( c) st 303c ..l se ries (double side cooled) r (d c ) = 0.05 k/w thj -hs 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 0 200 400 600 800 1000 1200 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) st3 03c ..l series t = 125 c j 0 20 0 40 0 60 0 80 0 1000 1200 1400 1600 1800 2000 0 100 200 300 400 500 600 700 800 180 120 90 60 30 rms limit con duction angle m axim um average o n-state pow er loss (w ) av era g e o n-sta te c urre nt ( a) st30 3c ..l se rie s t = 125 c j 3000 3500 4000 4500 5000 5500 6000 6500 7000 110100 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) in it ia l t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st303c..l series at an y rated l oad con dition and w ith rated v applied following surge. rrm 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 0.01 0.1 1 p u ls e tr a in d u ra t io n ( s ) v er sus p ulse tra in d ura tion . c on tro l of conduction may not be maintained. peak half sine w ave o n-state current (a) in it i a l t = 1 2 5 c n o v o lt a g e r e a p p l ie d rate d v re applied rrm j st303c..l series m a x im um n on rep e titiv e surg e c urre nt document number: 93675 www.vishay.com 6
st303c..l series bulletin i25186 rev. b 04/00 fig. 9 - on-state voltage drop characteristics fig. 10 - thermal impedance z thj-hs characteristics fig. 11 - reverse recovered charge characteristics fig. 12 - reverse recovery current characteristics fig. 13 - frequency characteristics 100 1000 10000 012345678 t = 2 5 c j instantaneous on-state current (a) instantan eous o n-state voltage (v) t = 1 25 c j st303c..l series 30 40 50 60 70 80 90 10 0 11 0 12 0 13 0 14 0 15 0 16 0 17 0 18 0 10 20 30 40 50 60 70 80 90 100 maximum reverse recovery current - irr (a) rate of fall of forw ard current - di/dt (a/s) 200 a st30 3c ..l se rie s t = 125 c j i = 10 00 a tm 500 a 300 a 100 a 80 100 120 140 160 180 200 220 240 260 280 300 320 10 20 30 40 50 60 70 80 90 100 200 a rate of fall of on-state current - di/dt (a/s) m axim um reverse recovery charge - qrr (c) st303c..l series t = 125 c j i = 1 00 0 a tm 500 a 300 a 100 a e1 1e2 1e3 1e4 50 hz 40 0 25 00 10 0 pulse ba se w id th (s) 10 00 15 00 3000 20 0 500 st303 c. .l se ries s inus o id a l p uls e t = 55 c c snubber circuit r = 1 0 o hm s c = 0.4 7 f v = 80% v s s d dr m 20 00 tp 1e1 0.001 0.0 1 0.1 1 0.001 0.01 0.1 1 10 sq ua re w a ve p ulse d ura tio n (s ) th j-hs tran sien t t he rm al im peda nce z (k/ w ) steady state value r = 0.11 k/w ( s in g l e s id e c o o l e d ) r = 0.05 k/w (d ouble side c ooled) (d c o peratio n) st303c ..l serie s th j- hs th j - h s 1e2 1e3 1e4 1e1 1e2 1e3 1e 4 50 hz 400 2500 100 pulse ba sew id th (s) p ea k o n -s ta te c u rr en t (a ) 1 000 1500 30 00 200 50 0 st303 c. .l serie s s inus o id a l p ul s e t = 40 c c 2000 snubber circuit r = 1 0 o hm s c = 0.4 7 f v = 80% v s s d dr m tp 1e4 document number: 93675 www.vishay.com 7
st303c..l series bulletin i25186 rev. b 04/00 fig. 14 - frequency characteristics fig. 15 - frequency characteristics fig. 16 - maximum on-state energy power loss characteristics 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 10 0 1 000 1500 2000 3000 200 50 0 pulse b ase w id th (s) peak on-state c urrent (a) st30 3c ..l se ries trapezoidal pulse t = 4 0 c di/dt = 100a/s c snub ber circuit r = 10 o hm s c = 0 .47 f v = 8 0% v s s d drm tp 1e4 1e 1 1e 2 1e 3 1e 4 1e1 1e2 1e3 1e4 50 hz 40 0 2500 10 0 100 0 1500 2000 3000 20 0 500 pulse b a sew id th (s) peak on -state c urrent (a) snub ber circuit r = 10 ohms c = 0 .47 f v = 8 0% v s s d drm st303c..l series tra p ezo id a l p uls e t = 40 c di/d t = 50a/s c tp 1e4 1e1 1e2 1e3 1e4 50 hz 40 0 2500 100 pulse b a sew id th (s) 1000 1500 20 00 20 0 50 0 st303c..l series tra p ezo id a l p uls e t = 5 5 c di/dt = 10 0a /s c snubber circuit r = 1 0 o hm s c = 0.47 f v = 80% v s s d drm tp 1e1 3000 1e1 1e2 1e3 1e4 50 hz 40 0 2500 100 pulse ba se w id th (s) 1 000 1500 20 00 20 0 500 snubber circuit r = 10 oh m s c = 0 .47 f v = 8 0% v s s d dr m st30 3c ..l se ries tra p e zoi d a l p uls e t = 55 c di/dt = 50a/s c tp 3000 1e1 1e 1 1e 2 1e 3 1e 4 1e 5 1e1 1e2 1e3 1 e4 pulse b ase w id th (s) 20 joules per pulse 2 1 0.5 10 5 peak o n-state current (a) 3 st30 3c ..l se ries s in uso i d a l p uls e 0.4 tp 1e4 1e1 1e2 1e3 1e4 pulse b a se w id th (s) 20 joules per pulse 2 1 0.5 10 5 0.4 3 st303c ..l se ries rec ta ng ula r p uls e di/dt = 50a/s tp 1e 1 document number: 93675 www.vishay.com 8
st303c..l series bulletin i25186 rev. b 04/00 fig. 17 - gate characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a) tj=25 c tj=125 c tj=-40 c (1) (2) instantaneous gate current ( a ) instantaneous gate voltage (v) rectangular gate pulse a) recommended load line for b) recommended load line for <=30% rated di/dt : 10v, 10ohms rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) pgm = 10w, tp = 20ms (2) pgm = 20w, tp = 10ms (3) pgm = 40w, tp = 5ms (4) pgm = 60w, tp = 3.3ms (3 ) device: st303c..l series frequency limited by pg(av) (4) document number: 93675 www.vishay.com 9
legal disclaimer notice vishay document number: 99901 www.vishay.com revision: 12-mar-07 1 notice the products described herein were acquired by vishay intertechnology, inc., as part of its acquisition of international rectifier?s power control systems (pcs) business, which closed in april 2007. specifications of the products displayed herein are pending review by vishay and are subject to the terms and conditions shown below. specifications of the products displayed herein are subject to change without notice. vishay intertechnology, inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale. international rectifier ? , ir ? , the ir logo, hexfet ? , hexsense ? , hexdip ? , dol ? , intero ? , and powirtrain ? are registered trademarks of international rectifier corporation in the u.s. and other countries. all other product names noted herein may be trademarks of their respective owners.
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