ECH8609 no.0000-1/6 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn0000 ECH8609 package dimensions unit : mm 2206 [ECH8609] n0102 ts im saitou(m) n-channel and p-channel silicon mosfets ultrahigh-speed switching applications specifications absolute maximum ratings at ta=25 c parameter symbol conditions n-channel p-channel unit drain-to-source voltage v dss 30 --30 v gate-to-source voltage v gss 20 20 v drain current (dc) i d 6--4a drain current (pulse) i dp pw 10 s, duty cycle 1% 40 --40 a allowable power dissipation p d mounted on a ceramic board (900mm 2 ? 0.8mm)1unit 1.3 w total power dissipation p t mounted on a ceramic board (900mm 2 ? 0.8mm) 1.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0 1 a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 a marking : fb continued on next page. any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 2.3 0.07 2.8 0.25 0.25 2.9 0.9 5678 43 21 0.3 0.65 0.15 8765 12 34 0.65 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : ech8 (bottom view) (top view) (side view) (side view) features the ECH8609 incorporates an n-channel mosfet and a p-channel mosfet that feature low on-resistance and high-speed switching, thereby enabling hugh-density mounting. 4v drive. preliminary
ECH8609 no.0000-2/6 continued from preceding page. ratings parameter symbol conditions min typ max unit cutoff voltage v gs (off) v ds =10v, i d =1ma 1.0 2.4 v forward transfer admittance ? yfs ? v ds =10v, i d =3a 3.3 5 s static drain-to-source on-state resistance r ds (on)1 i d =2a, v gs =10v 25 34 m ? r ds (on)2 i d =1a, v gs =4v 52 75 m ? input capacitance ciss v ds =10v, f=1mhz 510 pf output capacitance coss v ds =10v, f=1mhz 105 pf reverse transfer capacitance crss v ds =10v, f=1mhz 70 pf turn-on delay time t d (on) see specified test circuit. 15 ns rise time t r see specified test circuit. 74 ns turn-off delay time t d (off) see specified test circuit. 43 ns fall time t f see specified test circuit. 37 ns total gate charge qg v ds =10v, v gs =10v, i d =6a 11 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =6a 1.9 nc gate-to-drain ?iller?charge qgd v ds =10v, v gs =10v, i d =6a 2.9 nc diode forward voltage v sd i s =6a, v gs =0 0.85 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0 --1 a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.0 --2.4 v forward transfer admittance ? yfs ? v ds =--10v, i d =--2a 3.3 5 s static drain-to-source on-state resistance r ds (on)1 i d =--2a, v gs =--10v 50 67 m ? r ds (on)2 i d =--1a, v gs =--4v 87 120 m ? input capacitance ciss v ds =--10v, f=1mhz 550 pf output capacitance coss v ds =--10v, f=1mhz 120 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 90 pf turn-on delay time t d (on) see specified test circuit. 13 ns rise time t r see specified test circuit. 110 ns turn-off delay time t d (off) see specified test circuit. 65 ns fall time t f see specified test circuit. 75 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--4a 14 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--4a 2.2 nc gate-to-drain ?iller?charge qgd v ds =--10v, v gs =--10v, i d =--4a 2.5 nc diode forward voltage v sd i s =--4a, v gs =0 --0.88 --1.2 v switching time test circuit [n-channel] [p-channel] pw=10 s d.c. 1% p. g 50 ? g s d i d =3a r l =5 ? v dd =15v v out v in 10v 0v v in pw=10 s d.c. 1% p. g 50 ? g s d i d = --2a r l =7.5 ? v dd = --15v v out v in 0v --10v v in
ECH8609 no.0000-3/6 20 40 60 80 100 120 140 160 180 0 --2 --4 --6 --8 --10 --12 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 -- 9 -- 1 0 -- 0 . 5 0 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 0 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a it05594 it05596 --4.0v v gs = --2.5v --10.0v --5.0v --25 c ta=75 c it05598 ta=25 c --8.0v --6.0v v ds = --10v 25 c -- 2 a i d = -- 1 a [nch] [pch] [nch] [pch] [nch] [pch] 20 40 60 80 100 120 024681012 0 1 2 3 4 5 6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 2 3 4 5 6 7 8 9 10 0.5 0 1.0 1.5 2.0 2.5 3.0 4.5 5.0 3.5 4.0 0 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a it05593 it05595 4v v gs =3v 10v 5v ta=75 c it05597 ta=25 c 8v 6v v ds =10v --25 c 2 a i d = 1 a 25 c i d -- v ds drain-to-source voltage, v ds -- v drain current, i d -- a r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m ? gate-to-source voltage, v gs -- v r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m ? gate-to-source voltage, v gs -- v electrical connection d1 d1 d2 d2 s1 g1 s2 g2 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 (top view)
ECH8609 no.0000-4/6 1.0 10 7 5 3 2 100 7 5 3 2 1000 7 5 3 2 -- 1 . 0 7 5 3 2 -- 0 . 1 7 5 3 2 0.1 1.0 7 5 3 2 10 7 5 3 2 100 7 5 3 2 -- 1 0 -- 1 . 0 7 5 3 2 -- 0 . 1 7 5 3 22 drain current, i d -- a forward transfer admittance, ? y fs ? -- s ? y fs ? -- i d it05602 v ds = --10v drain current, i d -- a sw time -- i d it05606 it05604 switching time, sw time -- ns 75 c 25 c ta= --25 c --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 --0.001 2 --0.01 -- 0 . 1 7 5 3 2 7 5 3 -- 1 . 0 7 5 3 2 -- 1 0 7 5 3 2 3 2 25 c --25 c v gs =0 ta=75 c v dd = --15v v gs = --10v t d (on) t d (off) t r t f [nch] [pch] [nch] [pch] [nch] [pch] 0 20 40 60 80 100 120 140 --50 --25 0 25 75 50 100 125 150 it05600 i d = -- 2 a, v gs = --10 v [nch] [pch] 0 10 20 30 40 50 60 80 70 -- 5 0 -- 2 5 0 2 5 7 5 50 100 125 150 it05599 i d = 2 a, v gs = 10 v i d = 1 a, v gs =4v 2 10 2 100 2 3 7 5 3 7 5 3 1.0 7 5 3 2 0.1 7 5 3 2 0.1 1.0 7 5 3 2 7 5 3 2 10 5 3 2 10 1.0 7 5 3 2 0.1 7 5 3 22 it05601 v ds =10v it05605 it05603 diode forward voltage, v sd -- v forward current, i f -- a i f -- v sd 75 c 25 c ta= --25 c 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.001 2 0.01 0.1 7 5 3 2 7 5 3 1.0 7 5 3 2 10 7 5 3 2 3 2 25 c --25 c v gs =0 ta=75 c v dd =15v v gs =10v t d (on) t d (off) t f t r r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m ? ambient temperature, ta -- c r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m ? ambient temperature, ta -- c ? y fs ? -- i d drain current, i d -- a forward transfer admittance, ? y fs ? -- s i f -- v sd diode forward voltage, v sd -- v forward current, i f -- a sw time -- i d drain current, i d -- a switching time, sw time -- ns i d = -- 1 a, v gs = --4v
ECH8609 no.0000-5/6 --1.0 --0.1 7 5 3 2 --0.01 7 5 3 2 --10 7 5 3 25 3 2 02468101214 0 --5 --10 --15 --20 --25 --30 10 100 7 5 3 2 1000 3 2 7 5 3 2 0 -- 9 --10 -- 6 -- 8 -- 7 -- 4 -- 5 -- 2 -- 1 -- 3 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v it05610 --100 --10 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 --1.0 --0.1 --0.01 it05612 it05608 f=1mhz ciss crss coss v ds = --10v i d = --4a i dp = --40a i d = -- 4 a 100ms dc operation 1ms 10ms <10 s ta=25 c single pulse mounted on a ceramic board(900mm 2 ? 0.8mm) 0 20 40 60 80 100 120 140 160 0 1.8 2.0 1.2 1.6 1.4 0.8 1.0 0.4 0.2 0.6 it05582 operation in this area is limited by r ds (on). mounted on a ceramic board(900mm 2 ? 0.8mm) 1unit [nch] [nch] [nch] [nch, pch] [pch] [pch] [pch] 1.0 0.1 7 5 3 2 0.01 7 5 3 2 10 7 5 3 25 3 2 024681012 0 5 10 15 20 25 30 2 100 7 5 3 2 1000 2 7 5 3 0 9 10 6 8 7 4 5 2 1 3 it05609 a s o drain-to-source voltage, v ds -- v drain current, i d -- a 100 10 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 1.0 0.1 0.01 it05611 ciss, coss, crss -- v ds drain-to-source voltage, v ds -- v ciss, coss, crss -- pf it05607 f=1mhz ciss crss coss v ds =10v i d =6a i dp =40a i d =6a 100ms dc operation 1ms 10ms <10 s ta=25 c single pulse mounted on a ceramic board(900mm 2 ? 0.8mm) operation in this area is limited by r ds (on). ciss, coss, crss -- v ds drain-to-source voltage, v ds -- v ciss, coss, crss -- pf v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a p d -- ta total dissipation ambient temperature, ta -- c allowable power dissipation, p d -- w
ECH8609 no.0000-6/6 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of october, 2002. specifications and information herein are subject to change without notice. ps
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