1 105 a new add-a-pak tm power modules thyristor/ thyristor irku/v105 series bulletin i27136 rev. b 09/97 www.irf.com major ratings and characteristics features electrically isolated: dbc base plate 3500 v rms isolating voltage standard jedec package simplified mechanical designs, rapid assembly auxiliary cathode terminals for wiring convenience high surge capability wide choice of circuit configurations large creepage distances ul e78996 approved description parameters irku/v105 units i t(av) @ 85c 105 a i t(rms) 165 a i tsm @ 50hz 1785 a @ 60hz 1870 a i 2 t @ 50hz 15.91 ka 2 s @ 60hz 14.52 ka 2 s i 2 ? t 159.1 ka 2 ? s v rrm range 400 to 1600 v t stg - 40 to 125 o c t j - 40 to130 o c these irku/v series of new add-a-paks use power thyristors in two circuit configurations. the semiconductor chips are electrically isolated from the base plate, allowing common heatsinks and compact assemblies to be built. they can be interconnected to form single phase bridges (irku+irkv) or 6-pulse midpoint connection bridge. these modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, battery charge and dc motor speed control circuits.
irku/v105 series 2 bulletin i27136 rev. b 09/97 www.irf.com v rrm , maximum v rsm , maximum v drm , max. repetitive i rrm voltage repetitive non-repetitive peak off-state voltage, i drm code peak reverse voltage peak reverse voltage gate open circuit 130c -vvvma 04 400 500 400 08 800 900 800 12 1200 1300 1200 16 1600 1700 1600 i t(av) max. average on-state 180 o conduction, half sine wave, current t c = 85 o c i t(rms ) max. rms on-state dc current. @ t c 77 c i tsm max. peak, one cycle 1785 t=10ms no voltage non-repetitive on-state 1870 t=8.3ms reapplied current 1500 t=10ms 100% v rrm 1570 t=8.3ms reapplied 2000 t=10ms t j = 25 o c, 2100 t=8.3ms no voltage reapplied i 2 t max. i 2 t for fusing 15.91 t=10ms no voltage 14.52 t=8.3ms reapplied 11.25 t=10ms 100% v rrm 10.27 t=8.3ms reapplied 20.00 t=10ms t j = 25 o c, 18.30 t=8.3ms no voltage reapplied i 2 ? t max. i 2 ? t for fusing (1) 159.1 k a 2 ? s t= 0.1 to 10ms, no voltage reappl., t j =t j max. v t(to) max. value of threshold 0.80 low level (3) voltage (2) 0.85 high level (4) r t max. value of on-state 2.37 low level (3) slope resistance (2) 2.25 high level (4) v tm max. peak on-state i tm = p x i t(av) voltage i fm = p x i f(av) di/dt max. non-repetitive rate t j = 25 o c, from 0.67 v drm , of rise of turned on 150 a/s i tm = p x i t(av) , i g = 500ma, current t r < 0.5 s, t p > 6 s i h max. holding current 200 t j = 25 o c, anode supply = 6v, resistive load, gate open circuit i l max. latching current 400 t j = 25 o c, anode supply = 6v,resistive load initial t j = t j max. v m w 1.64 v electrical specifications voltage ratings type number sinusoidal half wave, initial t j = t j max. 105 parameters irku/v105 units conditions on-state conduction a a 165 irku/v105 20 ma ka 2 s t j = t j max t j = t j max t j = 25c (1) i 2 t for time t x = i 2 ? t x ? t x . (2) average power = v t(to) x i t(av) + r t x ( i t(rms) ) 2 (3) 16.7% x p x i av < i < p x i av (4) i > p x i av
irku/v105 series 3 bulletin i27136 rev. b 09/97 www.irf.com t j junction operating temperature range t stg storage temperature range - 40 to 125 r thjc max. internal thermal resistance, 0.135 per module, dc operation junction to case r thcs typical thermal resistance case to heatsink t mounting torque 10% to heatsink 5 busbar 3 wt approximate weight 83 (3) g (oz) case style to-240aa jedec thermal and mechanical specifications parameters irku/v105 units conditions - 40 to 130 0.1 (5) available with dv/dt = 1000v/ m s, to complete code add s90 i.e. irku105/16s90. a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound c k/w nm mounting surface flat, smooth and greased. flatness < 0.03 mm; roughness < 0.02 mm i rrm max. peak reverse and i drm off-state leakage current 20 ma t j = 130 o c, gate open circuit at v rrm , v drm v ins rms isolation voltage 2500 (1 min) 50 hz, circuit to base, all terminals 3500 (1 sec) shorted dv/dt max. critical rate of rise t j = 130 o c, linear to 0.67 v drm , of off-state voltage (5) gate open circuit triggering p gm max. peak gate power 12 p g(av) max. average gate power 3 i gm max. peak gate current 3 a -v gm max. peak negative gate voltage 10 v gt max. gate voltage 4.0 v t j = - 40c required to trigger 2.5 t j = 25c 1.7 t j = 125c i gt max. gate current 270 t j = - 40c required to trigger 150 ma t j = 25c 80 t j = 125c v gd max. gate voltage that will not trigger i gd max. gate current that will not trigger 0.25 v 6ma anode supply = 6v resistive load anode supply = 6v resistive load w t j = 125 o c, rated v drm applied t j = 125 o c, rated v drm applied parameters irk.u/v105 units conditions parameters irku/v 105 units conditions blocking v 500 v/ m s sine half wave conduction rect. wave conduction devices units 180 o 120 o 90 o 60 o 30 o 180 o 120 o 90 o 60 o 30 o irku/v105 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 c/w d r conduction (per junction) (the following table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc)
irku/v105 series 4 bulletin i27136 rev. b 09/97 www.irf.com all dimensions in millimeters (inches) irku105/.. (*) irkv105/.. (*) outlines table (*) for terminals connections, see circuit configurations table circuit configurations table 30 0.5 (1.18 0.02) 29 0.5 (1.13 0.02) 6.1 0.3 (0.24 0.01) 24 0.5 18 ref. (0.71) 15.5 0.5 (0.61 0.02) 30 0.1 (1.18 0.04) faston tab. 2.8 x 0.8 20.5 0.75 ( 0.8 1 0.03 ) 15 0.5 (0.59 0.02) 20 0.5 (0.79 0.02) 5.8 0.25 (0.16 0.01) 4 pitch 4.0 0.2 (0.23 0.01) (0.25 0.01) 6.3 0.3 576 2 3 80 0.3 (3.15 0.01) (3.62 0.02) 92 0.5 20 0.5 screws m5 x 0.8 (0.11 x 0.03) (0.94 0.02) (0.79 0.02) 1 irkv irku k1 g1 (4) (5) + k2 g2 - - (1) (2) (3) (7) (6) + k2 g2 - k1 g1 + (1 ) (2 ) (4) (5) (7) (6) (3 ) note: to order the optional hardware see bulletin i27900
irku/v105 series 5 bulletin i27136 rev. b 09/97 www.irf.com irk u 105 / 16 s90 device code 1 2 34 5 1 - module type 2 - circuit configuration (see circuit configuration table) 3 - current code 4 - voltage code (see voltage ratings table) 5 - dv/dt code: s90 = dv/dt 1000 v/s no letter = dv/dt 500 vs ordering information table fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics 70 80 90 100 110 120 130 0 2040608010012 0 30 60 90 120 180 average on-state current (a) maximum allowable case temper atur e ( c ) conduction angle irk.105.. series r (dc) = 0.27 k/w thjc 70 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 18 0 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c ) conduction period irk.105.. series r (dc) = 0.27 k/w thjc 0 20 40 60 80 100 120 140 160 180 200 0 2040608010012014016018 0 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w ) average on-state current (a) irk.105.. series per junction t = 130c j 0 20 40 60 80 100 120 140 160 0 204060801001 20 rms limit maximum average on-state power loss (w ) average on-state current (a) 180 120 90 60 30 conduction angle irk.105.. series per junction t = 130c j
irku/v105 series 6 bulletin i27136 rev. b 09/97 www.irf.com fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state power loss characteristics (single phase bridge irku+irkv) fig. 8 - on-state power loss characteristics 700 800 900 1000 1100 1200 1300 1400 1500 1600 110100 number of equal amplitude half cycle current pulses (n ) peak half sine wave on-state current (a) initia l t = 130 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j at any rated load condition and with rated v applied following surge. rrm irk.105.. series per junction 600 800 1000 1200 1400 1600 1800 0.01 0.1 1 peak half sine wave on-state current (a) pulse train d urat ion (s) maximum non repetitive surge curr en t versus pulse train duration. contro l initial t = 130 c no voltage reapplied rated v reapplied of conduction may not be maintained . j rrm irk.105.. series per junction 0 20406080100120140 maximum allowable ambient temperature ( c ) 0 . 5 k / w 0 . 3 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 . 2 k / w 0 . 7 k / w 1 k / w 2 k / w 0 100 200 300 400 500 600 0 40 80 120 160 200 total output current (a) maximum total power loss (w) 180 (sine) 180 (rec t) 2 x irk.105.. series sin gle ph ase bridge connected t = 130 c j 0 20 40 60 80 100 120 140 maximum allowable ambient temperature ( c ) 1 k / w 0 . 5 k / w 0 . 3 k / w r = 0 . 1 k / w - d e l t a r t h s a 0 . 2 k / w 0 100 200 300 400 500 600 700 800 900 0 50 100 150 200 250 300 350 400 450 total output current (a) maximum total power loss (w) 60 (rect) 3 x irk.105.. series 6-pulse midpoint connection bridge t = 130 c j i o
irku/v105 series 7 bulletin i27136 rev. b 09/97 www.irf.com fig. 9 - on-state voltage drop characteristics fig. 10 - recovery charge characteristics fig. 11 - recovery current characteristics fig. 12 - thermal impedance z thjc characteristics 0.01 0.1 1 0.001 0.01 0.1 1 1 0 square wave pulse duration (s) thjc transient thermal impedance z (k/w) irk.105.. series per junction steady state value: r = 0.27 k/w (dc operation) thjc 1 10 100 1000 00.511.522.533 .5 t = 25 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 130c j irk.105.. series per junction 20 40 60 80 100 120 140 10 20 30 40 50 60 70 80 90 10 0 maximum reverse recovery current - irr (a ) rate of fall of forward current - di/dt (a/ s) 100 a 50 a i = 200 a tm 20 a 10 a irk.105.. series t = 125 c j 100 200 300 400 500 600 700 10 20 30 40 50 60 70 80 90 10 0 100 a 50 a rate of fall of on-state current - di/dt (a/ s) maximum reverse recovery charge - qrr ( c ) i = 200 a tm 20 a 10 a irk.105.. series t = 125 c j
irku/v105 series 8 bulletin i27136 rev. b 09/97 www.irf.com fig. 13- gate characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 100 0 (b) (a) (4) (3) (2) (1) instantaneous gate current (a) instantaneous gate voltage (v) tj = -40 c tj = 25 c tj = 125 c a) recom mended l oad line fo r b) recommended load line for vgd igd frequency limited by pg(av) (1) pgm = 200 w, tp = 300 s (2) pgm = 60 w, tp = 1 ms (3) pgm = 30 w, tp = 2 ms (4) pgm = 12 w, tp = 5 ms <= 30% rated di/dt: 15 v, 40 ohms tr = 1 s, tp >= 6 s rated di/dt: 20 v, 20 ohms tr = 0.5 s, tp >= 6 s rectangular gate pulse irk.105.. series
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