View STMICROELECTRONICS-STP11NM50N_6873337.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

april 2010 doc id 17156 rev 2 1/16 16 std11nm50n stf11nm50n, stp11nm50n n-channel 500 v, 0.4 ? , 9 a mdmesh? ii power mosfet in dpak, to-220fp and to-220 features 100% avalanche tested low input capacitances and gate charge low gate input resistance application switching applications description this second generation of mdmesh? technology, applies the benefits of the multiple drain process to stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. figure 1. internal schematic diagram type v dss @t jmax r ds(on) max i d std11nm50n stf11nm50n stp11nm50n 550 v < 0.47 ? 9 a dpak 1 3 1 2 3 to-220 1 2 3 to-220fp !-v $ ' 3 table 1. device summary order codes marking package packaging std11nm50n 11nm50n dpak tape and reel stf11nm50n 11nm50n to-220fp tube stp11nm50n 11nm50n to-220 tube www.st.com
contents std11nm50n, stf11nm50n, stp11nm50n 2/16 doc id 17156 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
std11nm50n, stf11nm50n, stp11nm50n electrical ratings doc id 17156 rev 2 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 dpak to-220fp v ds drain-source voltage (v gs = 0) 500 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 9 9 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 6 6 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 36 36 (1) a p tot total dissipation at t c = 25 c 70 70 25 w i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 3a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50 v) 150 mj dv/dt (3) 3. i sd 7.5 a, di/dt 400 a/s, v peak < v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junc tion temperature 150 c table 3. thermal data symbol parameter value unit to-220 dpak to-220fp r thj-case thermal resistance junction-case max 1.79 5 c/w r thj-amb thermal resistance junction-ambient max 62.5 62.5 c/w r thj-pcb thermal resistance junction-pcb max (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu 50 c/w t l maximum lead temperature for soldering purpose 300 300 c
electrical characteristics std11nm50n, stf11nm50n, stp11nm50n 4/16 doc id 17156 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 4.5 a 0.4 0.47 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 547 42 2 - pf pf pf c o(tr) (1) 1. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 400 v, v gs = 0 -59-pf c o(er) (2) 2. c oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -29-pf r g intrinsic gate resistance f = 1 mhz open drain - 5.8 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 9 a, v gs = 10 v (see figure 18 ) - 19 3.7 10 - nc nc nc
std11nm50n, stf11nm50n, stp11nm50n electrical characteristics doc id 17156 rev 2 5/16 table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 250 v, i d = 4.5 a, r g = 4.7 ?, v gs = 10 v (see figure 19 ) - 8 10 33 10 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 9 36 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 9 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9a, di/dt = 100 a/s v dd = 60 v (see figure 22 ) - 230 2.1 18 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 22 ) - 275 2.5 18 ns c a
electrical characteristics std11nm50n, stf11nm50n, stp11nm50n 6/16 doc id 17156 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for dpak figure 7. thermal impedance for dpak ) $ 6 $3 6 ! /perationinthisareais ,imitedbyma x 2 $3on ? s ? s ms ms 4j ? # 4c ? # 3ingle pulse !-v ) $ 6 $3 6 ! /perationinthisareais ,imitedbyma x 2 $3on ? s ? s ms ms 4j ? # 4c ? # 3ingle pulse !-v ) $ 6 $3 6 ! /perationinthisareais ,imitedbyma x 2 $3on ? s ? s ms ms 4j ? # 4c ? # 3ingle pulse !-v
std11nm50n, stf11nm50n, stp11nm50n electrical characteristics doc id 17156 rev 2 7/16 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy ) $ 6 $3 6 ! 6 6 6 '3 6 !-v ) $ 6 '3 6 ! 6 $3 6 !-v 6 '3 1 g n# 6 6 $$ 6 ) $ ! 6 $3 6 '3 !-v 2 $3on ) $ ! /hm 6 '3 6 !-v # 6 $3 6 p& #iss #oss #rss !-v % oss 6 $3 6 ? * !-v
electrical characteristics std11nm50n, stf11nm50n, stp11nm50n 8/16 doc id 17156 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. normalized b vdss vs temperature 6 '3th 4 * ? # norm !-v 2 $3on 4 * ? # norm !-v "6 $33 4 * ? # norm !-v
std11nm50n, stf11nm50n, stp11nm50n test circuits doc id 17156 rev 2 9/16 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive wavefor m figure 22. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data std11nm50n, stf11nm50n, stp11nm50n 10/16 doc id 17156 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
std11nm50n, stf11nm50n, stp11nm50n package mechanical data doc id 17156 rev 2 11/16 figure 23. to-220fp drawing table 8. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
package mechanical data std11nm50n, stf11nm50n, stp11nm50n 12/16 doc id 17156 rev 2 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 a2 0.0 3 0.2 3 b 0.64 0. 9 0 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.2 8 e1 4.40 4.60 h 9 . 3 5 10.10 l1 l1 2. 8 0 l2 0. 8 0 l4 0.60 1 r0.20 v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
std11nm50n, stf11nm50n, stp11nm50n package mechanical data doc id 17156 rev 2 13/16 to-220 type a mechanical data dim mm min typ max a 4.40 4.60 b 0.61 0. 88 b 1 1.14 1.70 c0.4 8 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4. 9 5 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 . 93 l20 16.40 l 3 02 8 . 9 0 ? p 3 .75 3 . 8 5 q 2.65 2. 9 5 0015988_rev_s
packaging mechanical data std11nm50n, stf11nm50n, stp11nm50n 14/16 doc id 17156 rev 2 5 packaging mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
std11nm50n, stf11nm50n, stp11nm50n revision history doc id 17156 rev 2 15/16 6 revision history table 9. document revision history date revision changes 22-feb-2010 1 first release. 26-apr-2010 2 updated table 7: source drain diode .
std11nm50n, stf11nm50n, stp11nm50n 16/16 doc id 17156 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STMICROELECTRONICS-STP11NM50N

	To Download STMICROELECTRONICS-STP11NM50N Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .