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this is information on a product in full production. june 2013 docid024837 rev 1 1/14 STW62N65M5 automotive-grade n-channel 650 v, 0.041 typ., 46 a mdmesh? v power mosfet in a to-247 package datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aeq-q101 qualified ? outstanding r ds(on) * area ? high v ds rating and high dv/dt capability ? excellent switching performance ? 100% avalanche tested applications ? switching applications description this device is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. to-247 1 2 3 $0y ' * 6 order code v ds @ t jmax r ds(on) max i d STW62N65M5 710 v 0.049 46 a table 1. device summary order code marking package packaging STW62N65M5 62n65m5 to-247 tube www.st.com
contents STW62N65M5 2/14 docid024837 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
docid024837 rev 1 3/14 STW62N65M5 electrical ratings 14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 46 a i d drain current (continuous) at t c = 100 c 26 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 184 a p tot total dissipation at t c = 25 c 330 w dv/dt (2) 2. i sd 46 a, di/dt 400 a/s; v ds peak < v (br)dss, v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds 520 v mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.38 c/w r thj-amb thermal resistance junction-ambient max 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 12 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 1400 mj
electrical characteristics STW62N65M5 4/14 docid024837 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v 1 a v ds = 650 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 23 a 0.041 0.049 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 6420 - pf c oss output capacitance - 170 - pf c rss reverse transfer capacitance -11-pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -536-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -146-pf r g intrinsic gate resistance f = 1 mhz open drain - 1.2 - q g total gate charge v dd = 520 v, i d = 23 a, v gs = 10 v (see figure 16 ) -142-nc q gs gate-source charge - 34 - nc q gd gate-drain charge - 58 - nc
docid024837 rev 1 5/14 STW62N65M5 electrical characteristics 14 table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 400 v, i d = 30 a, r g = 4.7 , v gs = 10 v (see figure 17 and figure 20 ) -101-ns t r rise time - 11 - ns t d(off) turn-off delay time - 8 - ns t f fall time - 14 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 46 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) 184 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 46 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 46 a, di/dt = 100 a/s v dd = 100 v (see figure 17 ) - 448 ns q rr reverse recovery charge - 10 c i rrm reverse recovery current - 43 a t rr reverse recovery time i sd = 46 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 17 ) - 548 ns q rr reverse recovery charge - 14 c i rrm reverse recovery current - 51 a
electrical characteristics STW62N65M5 6/14 docid024837 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v ?v pv pv 7m ?& 7f ?& 6lqojh sxovh $0y figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance , ' 9 '6 9 $ 9 9 9 *6 9 9 $0y , ' 9 *6 9 $ 9 '6 9 $0y 9 *6 4 j q& 9 9 '' 9 , ' $ $0y r ds(on) 0.040 0.039 0.038 0 i d (a) ( ) 10 0.041 20 30 40 0.042 0.043 0.044 am15919v1
docid024837 rev 1 7/14 STW62N65M5 electrical characteristics 14 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized v dss vs temperature & 9 '6 9 s) &lvv &rvv &uvv $0y ( rvv 9 '6 9 ?- $0y v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a v ds =v gs am05459v2 r ds(on) 2 1 0 -55 5 t j (c) (norm) -25 95 35 65 0.5 1.5 2.5 am15497v1 v sd 0 20 i sd (a) (v) 10 50 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.04 1.06 1.02 i d = 1ma 1.08 am10399v1
electrical characteristics STW62N65M5 8/14 docid024837 rev 1 figure 14. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode eon eoff i d =38a v dd =400v v gs =10v e 400 200 0 0 20 r g ( ) ( j) 10 30 600 800 40 1000 am12258v1
docid024837 rev 1 9/14 STW62N65M5 test circuits 14 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am05540v1 inductive load turn -off id vgs vds 90%vds 10%id 90%vgs on t d (v) t c (off) 10%vds 90%id vgs(i(t)) on t f (i) t r (v) ))
package mechanical data STW62N65M5 10/14 docid024837 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024837 rev 1 11/14 STW62N65M5 package mechanical data 14 table 9. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data STW62N65M5 12/14 docid024837 rev 1 figure 21. to-247 drawing 0075325_g
docid024837 rev 1 13/14 STW62N65M5 revision history 14 5 revision history table 10. document revision history date revision changes 19-jun-2013 1 first release.
STW62N65M5 14/14 docid024837 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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