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caution electro-static sensitive devices the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. bipolar analog integrated circuit m m m m pc8172tb silicon mmic 2.5 ghz frequency up-converter for wireless transceiver document no. p14729ej2v0ds00 (2nd edition) date published september 2000 n cp(k) printed in japan data sheet 2000 the mark shows major revised points. description the m pc8172tb is a silicon monolithic integrated circuit designed as frequency up-converter for wireless transceiver transmitter stage. this ic is manufactured using necs 30 ghz f max. uhs0 (ultra h igh s peed process) silicon bipolar process. this ic is as same circuit current as conventional m pc8106tb, but operates at higher frequency, higher gain and lower distortion. consequently this ic is suitable for mobile communications. features ? recommended operating frequency : f rfout = 0.8 to 2.5 ghz ? higher ip 3 : cg = 9.5 db typ., oip 3 = +7.5 dbm typ. @ f rfout = 0.9 ghz ? high-density surface mounting : 6-pin super minimold package ? supply voltage : v cc = 2.7 to 3.3 v applications ? pcs1900m ? 2.4 ghz band transmitter/receiver system (wireless lan etc.) ordering information part number package marking supplying form m pc8172tb-e3 6-pin super minimold c3a embossed tape 8 mm wide. pin 1, 2, 3 face the tape perforation side. qty 3 kpcs/reel. remark to order evaluation samples, please contact your local nec sales office. (part number for sample order: m pc8172tb)
data sheet p14729ej2v0ds00 2 m m m m pc8172tb pin connections series products (t a = +25c, v cc = v rfout = 3.0 v, z s = z l = 50 w w w w ) cg (db) part number i cc (ma) f rfout (ghz) @rf 0.9 ghz note @rf 1.9 ghz @rf 2.4 ghz m pc8172tb 9 0.8 to 2.5 9.5 8.5 8.0 m pc8106tb 9 0.4 to 2.0 9 7 - m pc8109tb 5 0.4 to.2.0 6 4 - m pc8163tb 16.5 0.8 to 2.0 9 5.5 - p o(sat) (dbm) oip 3 (dbm) part number @rf 0.9 ghz note @rf 1.9 ghz @rf 2.4 ghz @rf 0.9 ghz note @rf 1.9 ghz @rf 2.4 ghz m pc8172tb +0.5 0 - 0.5 +7.5 +6.0 +4.0 m pc8106tb - 2 - 4 - +5.5 +2.0 - m pc8109tb - 5.5 - 7.5 - +1.5 - 1.0 - m pc8163tb +0.5 - 2 - +9.5 +6.0 - note f rfout = 0.83 ghz @ m pc8163tb remark typical performance. please refer to electrical characteristics in detail. to know the associated product, please refer to each latest data sheet. block diagram (for the m m m m pc8172tb) loinput gnd ifinput ps v cc rfoutput (top view) 3 2 1 4 5 6 (top view) c3a 4 5 6 3 2 1 (bottom view) pin no. pin name 1 ifinput 2gnd 3 loinput 4ps 5v cc 6 rfoutput
data sheet p14729ej2v0ds00 3 m m m m pc8172tb system application examples (schematics of ic location in the system) wireless transceiver pc8172tb m demod. pll pa sw i q vco 0 90 q i rx tx pll low noise tr. n phase shifter to know the associated products, please refer to each latest data sheet.
data sheet p14729ej2v0ds00 4 m m m m pc8172tb contents 1. pin explanation ............................................................................................................. ............. 5 2. absolute maximum ratings .................................................................................................. 6 3. recommended operating conditions............................................................................... 6 4. electrical characteristics ................................................................................................ 6 5. other characteristics, for reference purposes only...................................... 7 6. test circuit ................................................................................................................ .................. 8 6.1 test circuit 1 (f rfout = 900 mhz).................................................................................... 8 6.2 test circuit 2 (f rfout = 1.9 ghz)..................................................................................... 9 6.3 test circuit 3 (f rfout = 2.4 ghz)..................................................................................... 10 7. typical characteristics..................................................................................................... ... 12 8. package dimensions .......................................................................................................... ....... 24 9. note on correct use ....................................................................................................... ...... 25 10. recommended soldering conditions............................................................................... 25
data sheet p14729ej2v0ds00 5 m m m m pc8172tb 1. pin explanation pin no. pin name applied voltage (v) pin voltage (v) note function and explanation equivalent circuit 1 ifinput - 1.4 this pin is if input to double bal- anced mixer (dbm). the input is designed as high impedance. the circuit contributes to sup- press spurious signal. also this symmetrical circuit can keep specified performance insensitive to process-condition distribution. for above reason, double bal- anced mixer is adopted. 2gnd gnd - gnd pin. ground pattern on the board should be formed as wide as possible. track length should be kept as short as possible to minimize ground impedance. 3 loinput - 2.3 local input pin. recommendable input level is - 10 to 0 dbm. 5v cc 2.7 to 3.3 - supply voltage pin. 6 rfoutput same bias as v cc through external inductor - this pin is rf output from dbm. this pin is designed as open collector. due to the high imped- ance output, this pin should be externally equipped with lc matching circuit to next stage. 4ps v cc /gnd - power save control pin. bias controls operation as follows. note each pin voltage is measured with v cc = v ps = v rfout = 3.0 v. pin bias control v cc operation gnd power save 3 5 6 1 2 5 4 2 v cc gnd
data sheet p14729ej2v0ds00 6 m m m m pc8172tb 2. absolute maximum ratings parameter symbol test conditions rating unit supply voltage v cc t a = +25c 3.6 v ps pin input voltage v ps t a = +25c 3.6 v power dissipation of package p d mounted on double-side copperclad 50 50 1.6 mm epoxy glass pwb (t a = +85c) 270 mw operating ambient temperature t a - 40 to +85 c storage temperature t stg - 55 to +150 c input power p in +10 dbm 3. recommended operating conditions parameter symbol test conditions min. typ. max. unit supply voltage v cc the same voltage should be applied to pin 5 and 6 2.7 3.0 3.3 v operating ambient temperature t a - 40 +25 +85 c local input level p loin z s = 50 w (without matching) - 10 - 50dbm rf output frequency f rfout with external matching circuit 0.8 - 2.5 ghz if input frequency f ifin 50 - 400 mhz 4. electrical characteristics (t a = +25c, v cc = v rfout = 3.0 v, f ifin = 240 mhz, p loin = - - - - 5 dbm, and v ps 3 3 3 3 2.7 v unless otherwise specified) parameter symbol test conditions note min. typ. max. unit circuit current i cc no signal 5.5 9.0 13 ma circuit current in power save mode i cc(ps) v ps = 0 v -- 2 m a cg1 f rfout = 0.9 ghz, p ifin = - 30 dbm 6.5 9.5 12.5 db cg2 f rfout = 1.9 ghz, p ifin = - 30 dbm 5.5 8.5 11.5 db conversion gain cg3 f rfout = 2.4 ghz, p ifin = - 30 dbm 5 8.0 11.0 db p o(sat) 1f rfout = 0.9 ghz, p ifin = 0 dbm - 2.5 +0.5 - dbm p o(sat) 2f rfout = 1.9 ghz, p ifin = 0 dbm - 3.5 0 - dbm saturated rf output power p o(sat) 3f rfout = 2.4 ghz, p ifin = 0 dbm - 4 - 0.5 - dbm note f rfout < f loin @ f rfout = 0.9 ghz f loin < f rfout @ f rfout = 1.9 ghz/2.4 ghz
data sheet p14729ej2v0ds00 7 m m m m pc8172tb 5. other characteristics, for reference purposes only (t a = +25c, v cc = v rfout = 3.0 v, p loin = - - - - 5 dbm, and v ps 3 3 3 3 2.7 v unless otherwise specified) parameter symbol test conditions note data unit oip 3 1f rfout = 0.9 ghz +7.5 dbm oip 3 2f rfout = 1.9 ghz +6.0 dbm output third-order distortion intercept point oip 3 3f rfout = 2.4 ghz f ifin 1 = 240 mhz f ifin 2 = 241 mhz +4.0 dbm iip 3 1f rfout = 0.9 ghz - 2.0 dbm iip 3 2f rfout = 1.9 ghz - 2.5 dbm input third-order distortion intercept point iip 3 3f rfout = 2.4 ghz f ifin 1 = 240 mhz f ifin 2 = 241 mhz - 4.0 dbm ssb nf1 f rfout = 0.9 ghz, f ifin = 240 mhz 9.5 db ssb nf2 f rfout = 1.9 ghz, f ifin = 240 mhz 10.4 db ssb noise figure ssb nf3 f rfout = 2.4 ghz, f ifin = 240 mhz 10.6 db rise time t ps(rise) v ps : gnd ? v cc 1 m s power save response time fall time t ps(fall) v ps : v cc ? gnd 1.5 m s note f rfout < f loin @ f rfout = 0.9 ghz f loin < f rfout @ f rfout = 1.9 ghz/2.4 ghz
data sheet p14729ej2v0ds00 8 m m m m pc8172tb 6. test circuit 6.1 test circuit 1 (f rfout = 900 mhz) spectrum analyzer strip line signal generator signal generator 100 pf 100 pf 50 w 50 w 50 w 1 2 3 4 5 6 10 nh m 100 pf 1 pf 1 000 pf 1 000 pf v cc 1 f m 1 f 68 pf ifinput gnd loinput rfoutput v cc ps c 3 c 8 c 5 c 7 c 6 c 4 c 1 c 2 l example of test circuit 1 assembled on evaluation board c 1 c 2 c 6 c 3 c 8 c 5 c 7 c 4 l v cc ps voltage supply ps bias rfoutput gnd loinput ifinput pc8172tb m component list form symbol value c 1 , c 2 , c 3 100 pf c 4 1 000 pf c 5 , c 6 1 m f c 7 68 pf chip capacitor c 8 1 pf chip inductor l 10 nh note ( * 1) 35 42 0.4 mm polyimide board, double-sided copper clad ( * 2) ground pattern on rear of the board ( * 3) solder plated patterns ( * 4) : through holes note 10 nh: ll1608-fh10n (toko co., ltd.)
data sheet p14729ej2v0ds00 9 m m m m pc8172tb 6.2 test circuit 2 (f rfout = 1.9 ghz) spectrum analyzer strip line signal generator signal generator 100 pf 100 pf 50 w 50 w 50 w 1 2 3 4 5 6 470 nh m 100 pf 2.75 pf 1 000 pf 1 000 pf v cc 1 f m 1 f 30 pf ifinput gnd loinput rfoutput v cc ps c 3 c 8 c 5 c 7 c 6 c 4 c 1 c 2 l example of test circuit 2 assembled on evaluation board c 1 c 2 c 6 c 3 c 5 c 7 c 4 c 8 l v cc ps voltage supply ps bias rfoutput gnd loinput ifinput pc8172tb m component list form symbol value c 1 , c 2 , c 3 100 pf c 4 1 000 pf c 5 , c 6 1 m f c 7 30 pf chip capacitor c 8 2.75 pf chip inductor l 470 nh note ( * 1) 35 42 0.4 mm polyimide board, double-sided copper clad ( * 2) ground pattern on rear of the board ( * 3) solder plated patterns ( * 4) : through holes note 470 nh: ll2012-fr47 (toko co., ltd.)
data sheet p14729ej2v0ds00 10 m m m m pc8172tb 6.3 test circuit 3 (f rfout = 2.4 ghz) spectrum analyzer strip line signal generator signal generator 100 pf 100 pf 50 w 50 w 50 w 470 nh m 100 pf 1.75 pf 1 000 pf 1 000 pf v cc 1 f m 1 f 10 pf 1 2 3 4 5 6 ifinput gnd loinput rfoutput v cc ps c 3 c 8 c 5 c 7 c 6 c 4 c 1 c 2 l example of test circuit 3 assembled on evaluation board c 1 c 2 c 6 c 3 c 5 c 7 c 4 c 8 l v cc ps voltage supply ps bias rfoutput gnd loinput ifinput pc8172tb m component list form symbol value c 1 , c 2 , c 3 100 pf c 4 1 000 pf c 5 , c 6 1 m f c 7 10 pf chip capacitor c 8 1.75 pf chip inductor l 470 nh note ( * 1) 35 42 0.4 mm polyimide board, double-sided copper clad ( * 2) ground pattern on rear of the board ( * 3) solder plated patterns ( * 4) : through holes note 470 nh: ll2012-fr47 (toko co., ltd.)
data sheet p14729ej2v0ds00 11 m m m m pc8172tb caution the test circuits and board pattern on data sheet are for performance evaluation use only (they are not recommended circuits). in the case of actual design-in, matching circuit should be de- termined using s-parameter of desired frequency in accordance to actual mounting pattern.
data sheet p14729ej2v0ds00 12 m m m m pc8172tb 7. typical characteristics (unless otherwise specified, t a = +25 c, v cc = v rfout ) 12 10 8 6 4 2 0 circuit current i cc (ma) circuit current vs. operating ambient temperature ?0 ?0 0 20 40 60 80 12 10 8 6 4 2 0 circuit current i cc (ma) circuit current vs. supply voltage 01234 12 10 8 6 4 2 0 circuit current i cc (ma) circuit current vs. ps pin input voltage 01234 ps pin control response time supply voltage v cc (v) operating ambient temperature t a ( c) ps pin input voltage v ps (v) ref lvl = 0 dbm att = 10 db 10 db/div (vertical axis) center = 0.9 ghz span = 0 hz rbw = 3 mhz vbw = 3 mhz swp = 50 sec 5 sec/div (horizontal axis) no signal v cc = v ps v cc = 3.0 v no signal v cc = v ps t a = +85 c v cc = 2.7 v v cc = 3.3 v v cc = 3.0 v t a = +25 c t a = ?0 c m m
data sheet p14729ej2v0ds00 13 m m m m pc8172tb s-parameters for each port (v cc = v ps = v rfout = 3.0 v) (the parameters are monitored at dut pins) 1 marker 1 1.15 ghz marker 2 1.65 ghz marker 3 2.15 ghz s 11 z ref 1.0 units 200.0 munits/ 21.625 w ?1.148 w start 0.400000000 ghz stop 2.500000000 ghz lo port 1 3 2 hp 1 marker 1 240.0 mhz s 11 z ref 1.0 units 200.0 munits/ 332.63 w ?01.34 w start 0.100000000 ghz stop 1.000000000 ghz if port 1 hp 1 marker 1 900.0 mhz marker 2 1.9 ghz marker 3 2.5 ghz s 22 z ref 1.0 units 200.0 munits/ 71.5 w ?40.34 w start 0.400000000 ghz stop 2.500000000 ghz rf port (without matching) 1 3 2 hp
data sheet p14729ej2v0ds00 14 m m m m pc8172tb s-parameters for matched rf output (v cc = v ps = v rfout = 3.0 v) - - - - on evaluation board - - - - (s 22 data are monitored at rf connector on board) 1 marker 1 900.0 mhz s 22 z ref 1.0 units 200.0 munits/ 55.615 w 2.2849 w start 0.400000000 ghz stop 1.400000000 ghz 900 mhz (matched in test circuit 1) 1 1 hp 1 s 22 log mag. ref 0.0 db 10.0 db/ ?4.754 db start 0.400000000 ghz stop 1.400000000 ghz hp 1 marker 1 1.9 ghz s 22 z ref 1.0 units 200.0 munits/ 38.584 w ?.2656 w start 1.400000000 ghz stop 2.400000000 ghz 1.9 ghz (matched in test circuit 2) 1 hp marker 1 900.0 mhz c d 1 1 s 22 log mag. ref 0.0 db 10.0 db/ ?8.196 db start 1.400000000 ghz stop 2.400000000 ghz hp marker 1 1.9 ghz c d c d c d 1
data sheet p14729ej2v0ds00 15 m m m m pc8172tb s-parameters for matched rf output (v cc = v ps = v rfout = 3.0 v) - - - - on evaluation board - - - - (s 22 data are monitored at rf connector on board) 1 marker 1 2.4 ghz s 22 z ref 1.0 units 200.0 munits/ 47.975 w ?.1113 w start 1.900000000 ghz stop 2.900000000 ghz 2.4 ghz (matched in test circuit 3) 1 hp 1 1 s 22 log mag. ref 0.0 db 10.0 db/ ?2.326 db start 1.900000000 ghz stop 2.900000000 ghz hp marker 1 2.4 ghz c d 1 c d
data sheet p14729ej2v0ds00 16 m m m m pc8172tb 5 0 ? ?0 ?5 ?0 ?5 rf output level p rfout (dbm) rf output level vs. if input level ?0 ?5 ?0 ?5 ?0 ? 0 5 10 ?0 ?5 ?0 ?5 ?0 ? 0 5 10 15 10 5 0 ? ?0 ?5 conversion gain cg (db) conversion gain vs. local input level ?0 ?5 ?0 ?5 ?0 ? 0 5 10 5 0 ? ?0 ?5 ?0 ?5 rf output level p rfout (dbm) rf output level vs. if input level 15 10 5 0 ? ?0 ?5 conversion gain cg (db) conversion gain vs. local input level ?0 ?5 ?0 ?5 ?0 ? 0 5 10 local input level p loin (dbm) local input level p loin (dbm) if input level p ifin (dbm) if input level p ifin (dbm) t a = +85 c t a = +85 c t a = +25 c t a = +25 c t a = ?0 c t a = ?0 c v cc = 3.3 v v cc = 3.0 v v cc = 2.7 v v cc = 3.3 v v cc = 3.0 v v cc = 2.7 v f rfout = 900 mhz f loin = 1 140 mhz p ifin = ?0 dbm v cc = v ps = 3.0 v f rfout = 900 mhz f loin = 1 140 mhz p ifin = ?0 dbm v cc = v ps f rfout = 900 mhz f loin = 1 140 mhz p loin = ? dbm v cc = v ps = 3.0 v f rfout = 900 mhz f loin = 1 140 mhz p loin = ? dbm v cc = v ps
data sheet p14729ej2v0ds00 17 m m m m pc8172tb 5 0 ? ?0 ?5 ?0 ?5 rf output level p rfout (dbm) rf output level vs. if input level ?0 ?5 ?0 ?5 ?0 ? 0 5 10 ? 0 5 10 15 10 5 0 ? ?0 ?5 conversion gain cg (db) conversion gain vs. local input level ?0 ?5 ?0 ?5 ?0 ?0 ?5 ?0 ?5 ?0 ? 0 5 10 ? 0 5 10 ?0 ?5 ?0 ?5 ?0 5 0 ? ?0 ?5 ?0 ?5 rf output level p rfout (dbm) rf output level vs. if input level 15 10 5 0 ? ?0 ?5 conversion gain cg (db) conversion gain vs. local input level local input level p loin (dbm) local input level p loin (dbm) if input level p ifin (dbm) if input level p ifin (dbm) t a = +25 c t a = +85 c t a = ?0 c t a = +25 c t a = +85 c t a = ?0 c v cc = 3.3 v v cc = 3.0 v v cc = 2.7 v f rfout = 1.9 ghz f loin = 1 660 mhz p ifin = ?0 dbm v cc = v ps v cc = 3.3 v v cc = 3.0 v v cc = 2.7 v f rfout = 1.9 ghz f loin = 1 660 mhz p loin = ? dbm v cc = v ps f rfout = 1.9 ghz f loin = 1 660 mhz p ifin = ?0 dbm v cc = v ps = 3.0 v f rfout = 1.9 ghz f loin = 1 660 mhz p loin = ? dbm v cc = v ps = 3.0 v
data sheet p14729ej2v0ds00 18 m m m m pc8172tb 5 0 ? ?0 ?5 ?0 ?5 rf output level p rfout (dbm) rf output level vs. if input level 15 10 5 0 ? ?0 ?5 conversion gain cg (db) conversion gain vs. local input level 5 0 ? ?0 ?5 ?0 ?5 rf output level p rfout (dbm) rf output level vs. if input level 15 10 5 0 ? ?0 ?5 conversion gain cg (db) conversion gain vs. local input level local input level p loin (dbm) local input level p loin (dbm) if input level p ifin (dbm) if input level p ifin (dbm) t a = +85 c t a = +25 c t a = ?0 c v cc = 3.3 v v cc = 3.0 v v cc = 2.7 v f rfout = 2.4 ghz f loin = 2 160 mhz p ifin = ?0 dbm v cc = v ps f rfout = 2.4 ghz f loin = 2 160 mhz p ifin = ?0 dbm v cc = v ps = 3.0 v t a = +85 c t a = +25 c t a = ?0 c v cc = 3.3 v v cc = 3.0 v v cc = 2.7 v f rfout = 2.4 ghz f loin = 2 160 mhz p loin = ? dbm v cc = v ps f rfout = 2.4 ghz f loin = 2 160 mhz p loin = ? dbm v cc = v ps = 3.0 v ? 0 5 10 ?0 ?5 ?0 ?5 ?0 ? 0 5 10 ?0 ?5 ?0 ?5 ?0 ? 0 5 10 ?0 ?5 ?0 ?5 ?0 ? 0 5 10 ?0 ?5 ?0 ?5 ?0
data sheet p14729ej2v0ds00 19 m m m m pc8172tb 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level ?0 ?5 ?0 ?5 ?0 ? 0 5 ?0 ?5 ?0 ?5 ?0 ? 0 5 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level if input level p ifin (dbm) if input level p ifin (dbm) if input level p ifin (dbm) if input level p ifin (dbm) if input level p ifin (dbm) if input level p ifin (dbm) ?0 ?5 ?0 ?5 ?0 ? 0 5 ?0 ?5 ?0 ?5 ?0 ? 0 5 ?0 ?5 ?0 ?5 ?0 ? 0 5 ?0 ?5 ?0 ?5 ?0 ? 0 5 t a = +25 c v cc = v ps = 2.7 v f rfout = 900 mhz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 1 140 mhz p loin = ? dbm t a = ?0 c v cc = v ps = 3.0 v f rfout = 900 mhz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 1 140 mhz p loin = ? dbm t a = +25 c v cc = v ps = 3.0 v f rfout = 900 mhz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 1 140 mhz p loin = ? dbm t a = +25 c v cc = v ps = 3.0 v f rfout = 900 mhz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 1 140 mhz p loin = ? dbm t a = +25 c v cc = v ps = 3.3 v f rfout = 900 mhz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 1 140 mhz p loin = ? dbm t a = +85 c v cc = v ps = 3.0 v f rfout = 900 mhz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 1 140 mhz p loin = ? dbm
data sheet p14729ej2v0ds00 20 m m m m pc8172tb 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level ?0 ?5 ?0 ?5 ?0 ? 0 5 ?0 ?5 ?0 ?5 ?0 ? 0 5 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level if input level p ifin (dbm) if input level p ifin (dbm) if input level p ifin (dbm) if input level p ifin (dbm) if input level p ifin (dbm) if input level p ifin (dbm) ?0 ?5 ?0 ?5 ?0 ? 0 5 ?0 ?5 ?0 ?5 ?0 ? 0 5 ?0 ?5 ?0 ?5 ?0 ? 0 5 ?0 ?5 ?0 ?5 ?0 ? 0 5 t a = +25 c v cc = v ps = 2.7 v f rfout = 1.9 ghz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 1 660 mhz p loin = ? dbm t a = ?0 c v cc = v ps = 3.0 v f rfout = 1.9 ghz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 1 660 mhz p loin = ? dbm t a = +25 c v cc = v ps = 3.0 v f rfout = 1.9 ghz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 1 660 mhz p loin = ? dbm t a = +25 c v cc = v ps = 3.0 v f rfout = 1.9 ghz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 1 660 mhz p loin = ? dbm t a = +25 c v cc = v ps = 3.3 v f rfout = 1.9 ghz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 1 660 mhz p loin = ? dbm t a = +85 c v cc = v ps = 3.0 v f rfout = 1.9 ghz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 1 660 mhz p loin = ? dbm
data sheet p14729ej2v0ds00 21 m m m m pc8172tb 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level ?0 ?5 ?0 ?5 ?0 ? 0 5 ?0 ?5 ?0 ?5 ?0 ? 0 5 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 3rd order intermodulation distortion im 3 (dbm) rf output level of each tone p rfout (dbm) im 3 , rf output level vs. if input level if input level p ifin (dbm) if input level p ifin (dbm) if input level p ifin (dbm) if input level p ifin (dbm) if input level p ifin (dbm) if input level p ifin (dbm) ?0 ?5 ?0 ?5 ?0 ? 0 5 ?0 ?5 ?0 ?5 ?0 ? 0 5 ?0 ?5 ?0 ?5 ?0 ? 0 5 ?0 ?5 ?0 ?5 ?0 ? 0 5 t a = +25 c v cc = v ps = 2.7 v f rfout = 2.4 ghz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 2 160 mhz p loin = ? dbm t a = ?0 c v cc = v ps = 3.0 v f rfout = 2.4 ghz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 2 160 mhz p loin = ? dbm t a = +25 c v cc = v ps = 3.0 v f rfout = 2.4 ghz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 2 160 mhz p loin = ? dbm t a = +25 c v cc = v ps = 3.0 v f rfout = 2.4 ghz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 2 160 mhz p loin = ? dbm t a = +25 c v cc = v ps = 3.3 v f rfout = 2.4 ghz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 2 160 mhz p loin = ? dbm t a = +85 c v cc = v ps = 3.0 v f rfout = 2.4 ghz f ifin 1 = 240 mhz f ifin 2 = 241 mhz f loin = 2 160 mhz p loin = ? dbm
data sheet p14729ej2v0ds00 22 m m m m pc8172tb 0 ?0 ?0 ?0 ?0 ?0 local leakage at if pin lo if (dbm) local leakage at if pin vs. local input frequency 0 ?0 ?0 ?0 ?0 ?0 local leakage at if pin lo if (dbm) local leakage at if pin vs. local input frequency 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 0 100 200 300 400 500 0 100 200 300 400 500 0 ?0 ?0 ?0 ?0 ?0 local leakage at rf pin lo rf (dbm) local leakage at rf pin vs. local input frequency 0 ?0 ?0 ?0 ?0 ?0 local leakage at rf pin lo rf (dbm) local leakage at rf pin vs. local input frequency 0 ?0 ?0 ?0 ?0 ?0 if leakage at rf pin if rf (dbm) if leakage at rf pin vs. if input frequency ?0 ?0 ?0 ?0 ?0 ?00 if leakage at rf pin if rf (dbm) if leakage at rf pin vs. if input frequency local input frequency f loin (ghz) local input frequency f loin (ghz) if input frequency f ifin (mhz) local input frequency f loin (ghz) local input frequency f loin (ghz) if input frequency f ifin (mhz) f rfout = 900 mhz p loin = ? dbm v cc = v ps = 3.0 v f rfout = 900 mhz p loin = ? dbm v cc = v ps = 3.0 v f rfout = 1.9 ghz p loin = ? dbm v cc = v ps = 3.0 v f rfout = 1.9 ghz p loin = ? dbm v cc = v ps = 3.0 v f rfout = 900 mhz f loin = 1 140 mhz p loin = ? dbm v cc = v ps = 3.0 v f rfout = 1.9 ghz f loin = 1 660 mhz p loin = ? dbm v cc = v ps = 3.0 v
data sheet p14729ej2v0ds00 23 m m m m pc8172tb 0 ?0 ?0 ?0 ?0 ?0 local leakage at rf pin lo rf (dbm) local leakage at rf pin vs. local input frequency 0 ?0 ?0 ?0 ?0 ?0 local leakage at if pin lo if (dbm) local leakage at if pin vs. local input frequency 0 0.5 1 1.5 2 2.5 3 0 100 200 300 400 500 0 0.5 1 1.5 2 2.5 3 0 ?0 ?0 ?0 ?0 ?0 if leakage at rf pin if rf (dbm) if leakage at rf pin vs. if input frequency local input frequency f loin (ghz) if input frequency f ifin (mhz) local input frequency f loin (ghz) f rfout = 2.4 ghz p loin = ? dbm v cc = v ps = 3.0 v f rfout = 2.4 ghz f loin = 2 160 mhz p loin = ? dbm v cc = v ps = 3.0 v f rfout = 2.4 ghz p loin = ? dbm v cc = v ps = 3.0 v remark the graphs indicate nominal characteristics.
data sheet p14729ej2v0ds00 24 m m m m pc8172tb 8. package dimensions 6-pin super minimold (unit: mm) 0.9 0.1 0.7 0 to 0.1 0.15 +0.1 ?.05 2.0 0.2 1.3 0.65 0.65 0.2 +0.1 ?.05 2.1 0.1 1.25 0.1 0.1 min.
data sheet p14729ej2v0ds00 25 m m m m pc8172tb 9. note on correct use (1) observe precautions for handling because of electrostatic sensitive devices. (2) form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). (3) connect a bypass capacitor (example: 1 000 pf) to the v cc pin. (4) connect a matching circuit to the rf output pin. (5) the dc cut capacitor must be each attached to the input and output pins. 10. recommended soldering conditions this product should be soldered under the following recommended conditions. for soldering methods and condi- tions other than those recommended below, contact your nec sales representative. soldering method soldering conditions recommended condition symbol infrared reflow package peak temperature: 235 c or below time: 30 seconds or less (at 210 c) count: 3, exposure limit: none note ir35-00-3 vps package peak temperature: 215 c or below time: 40 seconds or less (at 200 c) count: 3, exposure limit: none note vp15-00-3 wave soldering soldering bath temperature: 260 c or below time: 10 seconds or less count: 1, exposure limit: none note ws60-00-1 partial heating pin temperature: 300 c time: 3 seconds or less (per side of device) exposure limit: none note - note after opening the dry pack, keep it in a place below 25 c and 65% rh for the allowable storage period. caution do not use different soldering methods together (except for partial heating). for details of recommended soldering conditions for surface mounting, refer to information document semiconductor device mounting technology manual (c10535e).
data sheet p14729ej2v0ds00 26 m m m m pc8172tb [memo]
data sheet p14729ej2v0ds00 27 m m m m pc8172tb [memo]
m m m m pc8172tb attention observe precautions for handling electrostatic sensitive devices m8e 00. 4 the information in this document is current as of september, 2000. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above).

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