preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 gup eup gun u gvp evp gvn v gwp ewp gwn w e r s t p1 p n1 th1 th2 b gb pps pps label main circuit terminal t=0.6 control circuit terminal t=0.6 p1 n1 open open open p eup gup evp gvp ewp gwp rst b th1 uvwgb th2 e gun gvn gwn 2.5 1.5 (2.5) 0.6 0.1 4 f 6 f 6 13 6 11 11 11 11 11 11 7.62 7.62 2.54 2.54 2.54 61111 11 10 2.54 10 11 11 11 2.54 2.54 2.54 2.54 110 0.25 120 63 5 5 22 22 4 60 0.5 12 13 6.4 2-r5 2- f 4.5 mounting holes circuit diagram CM15AD05-24H mitsubishi igbt modules CM15AD05-24H medium power switching use flat base, insulated type i c ..................................................................... 15a v ces ......................................................... 1200v insulated type 3 f inverter + 3 f converter + brake + thermistor application ac & dc motor controls, general purpose inverters outline drawing & circuit diagram dimensions in mm
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 v v a w v a v v a a w mitsubishi igbt modules CM15AD05-24H medium power switching use flat base, insulated type 1200 20 15 30 15 30 1200 20 15 30 1200 15 1600 440 15 250 260 v v a a a 2 s C40 ~ +150 C40 ~ +125 2500 0.98 ~ 1.47 140 c c v nm g collector current emitter current collector-emitter voltage gate-emitter voltage maximum collector dissipation g-e short c-e short t c = 25 c pulse (note. 2) t c = 25 c pulse (note. 2) t c = 25 c symbol parameter conditions unit rating v ces v ges i c i cm i e ( note.1 ) i em ( note.1 ) p c ( note.3 ) collector-emitter voltage gate-emitter voltage maximum collector dissipation repetitive peak reverse voltage forward current g-e short c-e short t c = 25 c pulse (note. 2) t c = 25 c clamp diode part clamp diode part symbol parameter collector current conditions unit rating v ces v ges i c i cm p c ( note.3 ) v rrm i fm ( note.3 ) repetitive peak reverse voltage recommended ac input voltage dc output current surge (non-repetitive) forward current i 2 t for fusing 3 f rectifying circuit 1/2 cycle at 60hz, peak value, non-repetitive value for one cycle of surge current symbol parameter conditions unit rating v rrm e a i o i fsm i 2 t junction temperature storage temperature isolation voltage mounting torque weight ac 1 min. mounting m4 screw typical value symbol t j t stg v iso parameter conditions unit rating maximum ratings (tj = 25 c) inverter part brake part converter part common rating
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 ma m a nf nc ns v ns m c c/w v v mitsubishi igbt modules CM15AD05-24H medium power switching use flat base, insulated type 1 0.5 3.4 3.0 2.4 0.6 100 200 150 350 3.5 250 v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 150 c v cc = 600v, i c = 15a, v ge = 15v v cc = 600v, i c = 15a v ge1 = v ge2 = 15v r g = 21 w resistive load i e = 15a, v ge = 0v i e = 15a, v ge = 0v die / dt = C 30a / m s igbt part, per 1/6 module fwdi part, per 1/6 module i c = 1.5ma, v ce = 10v i c = 15a, v ge = 15v (note.4) v ce = 10v v ge = 0v 2.7 2.45 75 0.11 6 4.5 7.5 v v 1 0.5 3.4 3.0 2.4 0.6 1.5 v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 150 c v cc = 600v, i c = 15a, v ge = 15v i f = 15a, clamp diode part igbt part clamp diode part ma m a nf nc v c/w 2.7 2.45 75 6 4.5 7.5 i c = 1.5ma, v ce = 10v i c = 15a, v ge = 15v (note.4) v ce = 10v v ge = 0v v r = v rrm , t j = 150 c i f = 15a per 1/6 module ma v c/w i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec( note.1 ) t rr ( note.1 ) q rr ( note.1 ) r th(j-c)q r th(j-c)r symbol parameter test conditions v ge(th) v ce(sat) collector cutoff current gate-emitter cutoff current input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge gate-emitter threshold voltage collector-emitter saturation voltage thermal resistance collector cutoff current gate-emitter cutoff current input capacitance output capacitance reverse transfer capacitance total gate charge forward voltage drop gate-emitter threshold voltage collector-emitter saturation voltage thermal resistance i ces i ges c ies c oes c res q g v fm r th(j-c)q r th(j-c)r symbol parameter test conditions v ge(th) v ce(sat) repetitive reverse current forward voltage drop thermal resistance i rrm v fm r th(j-c) symbol parameter test conditions typ. limits min. max. unit unit typ. limits min. max. unit typ. limits min. max. 8 1.5 electrical characteristics (tj = 25 c) inverter part brake part converter part
preliminary notice: this is not a final specification. some parametric limits are subject to change. aug. 1999 mitsubishi igbt modules CM15AD05-24H medium power switching use flat base, insulated type k w k (100) (4000) c/w t c = 25 c resistance at 25 c, 50 c (note.5) test conditions resistance b constant r th b symbol parameter note.1 i e , v ec , t rr , q rr , di e /dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 2 pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 3 junction temperature (t j ) should not increase beyond 150 c. 4 pulse width and repetition rate should be such as to cause negligible temperature rise. 5 b = (inr 1 -inr 2 )/(1/t 1 -1/t 2 )r 1 : resistance at t 1 (k) r 2 : resistance at t 2 (k) * 1 : typical value is measured by using shin-etsu silicone g-746. contact thermal resistance r th(c-f) symbol parameter test conditions case to fin, thermal compound applied * 1 (1 module) ( ) : these parametric limits are tentative. unit typ. limits min. max. unit typ. limits min. max. thermistor part common rating
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