IRG4BAC50U ultrafast speed igbt insulated gate bipolar transistor e c g features ? ultrafast: optimized for high operating frequencies 8-40khz in hard switching, >200 khz in resonant mode ? generation 4 igbt design provides tighter parameter distribution and higher efficiency than generation 3 ? industry super-220? (to-273aa) package ? generation 4 igbt offers highest efficiency available ? optimized for specified application conditions benefits v ces = 600v v ce(on) typ. = 1.65v @v ge = 15v, i c = 27a parameter typ. max. units r q jc junction-to-case CCC 0.64 r q cs case-to-sink, flat, greased surface 0.5 CCC c/w r q ja junction-to-ambient, typical socket mount CCC 40 wt weight tbd CCC g (oz) thermal resistance parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current 55 i c @ t c = 100c continuous collector current 27 a i cm pulsed collector current ? 220 i lm clamped inductive load current ? 220 v ge gate-to-emitter voltage 20 v e arv reverse voltage avalanche energy ? 20 mj p d @ t c = 25c maximum power dissipation 200 p d @ t c = 100c maximum power dissipation 78 t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) c mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) absolute maximum ratings w 1/19/2000 www.irf.com 1 super-220? (to-273aa) provisional n-channel pd -93770
IRG4BAC50U 2 www.irf.com parameter min. typ. max. units conditions q g total gate charge (turn-on) CCC 180 270 i c = 27a q ge gate - emitter charge (turn-on) CCC 25 38 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) CCC 61 90 v ge = 15v t d(on) turn-on delay time CCC 32 CCC t r rise time CCC 20 CCC t j = 25c t d(off) turn-off delay time CCC 170 260 i c = 27a, v cc = 480v t f fall time CCC 88 130 v ge = 15v, r g = 5.0 w e on turn-on switching loss CCC 0.12 CCC energy losses include "tail" e off turn-off switching loss CCC 0.54 CCC mj see fig. 10, 11, 13, 14 e ts total switching loss CCC 0.66 0.9 t d(on) turn-on delay time CCC 31 CCC t j = 150c, t r rise time CCC 23 CCC i c = 27a, v cc = 480v t d(off) turn-off delay time CCC 230 CCC v ge = 15v, r g = 5.0 w t f fall time CCC 120 CCC energy losses include "tail" e ts total switching loss CCC 1.6 CCC mj see fig. 13, 14 l c internal collector inductance CCC 2.0 CCC nh measured 5mm from package l e internal emitter inductance CCC 5.0 CCC c ies input capacitance CCC 4000 CCC v ge = 0v c oes output capacitance CCC 250 CCC pf v cc = 30v see fig. 7 c res reverse transfer capacitance CCC 52 CCC ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 CCC CCC v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage ? 18 CCC CCC v v ge = 0v, i c = 1.0a d v (br)ces / d t j temperature coeff. of breakdown voltage CCC 0.60 CCC v/c v ge = 0v, i c = 1.0ma CCC 1.65 2.0 i c = 27a v ge = 15v v ce(on) collector-to-emitter saturation voltage CCC 2.0 CCC i c = 55a see fig.2, 5 CCC 1.6 CCC i c = 27a , t j = 150c v ge(th) gate threshold voltage 3.0 CCC 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage CCC -13 CCC mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 16 24 CCC s v ce 3 15v, i c = 27a CCC CCC 250 v ge = 0v, v ce = 600v CCC CCC 2.0 v ge = 0v, v ce = 10v, t j = 25c CCC CCC 5000 v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current CCC CCC 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) i ces zero gate voltage collector current v a switching characteristics @ t j = 25c (unless otherwise specified) ns ns ? pulse width 80s; duty factor 0.1%. ? pulse width 5.0s, single shot. notes: ? repetitive rating; v ge = 20v, pulse width limited by max. junction temperature. (see fig. 13b) ? v cc = 80%(v ces ), v ge = 20v, l = 10h, r g = 5.0 w , (see fig. 13a) ? repetitive rating; pulse width limited by maximum junction temperature.
IRG4BAC50U www.irf.com 3 fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 0.1 1 10 100 1000 0110 ce c i , collector-to-emitter current (a) v , collector-to-em itter volta g e ( v ) t = 150c t = 25c j j a v = 1 5 v 20s pulse w idth ge 1 10 100 1000 4 6 8 10 12 c i , collector-to-em itter current (a) ge t = 25c t = 150c j j v , gate-to-emitter volta g e ( v ) a v = 10v 5s pulse w idth cc 0 20 40 60 80 0.1 1 10 100 f, fre q uenc y ( khz ) load current (a) a 60% of rated voltage ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissip atio n = 40w triangular wave: clamp voltage: 80% of rated
IRG4BAC50U 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , c ollector-to-em itter voltage (v) v = 15v 80s pulse w idth ge a t , junction temperature ( c ) j i = 54a i = 27a i = 14 a c c c 0 10 20 30 40 50 60 25 50 75 100 125 150 m aximum d c collector current (a) t , case temperature (c) c v = 15v ge 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 s in g l e p u ls e (thermal response) thermal response (z ) p t 2 1 t dm n otes: 1. d uty factor d = t / t 2. p eak t = p x z + t 1 2 j dm thjc c
IRG4BAC50U www.irf.com 5 fig. 10 - typical switching losses vs. junction temperature fig. 9 - typical switching losses vs. gate resistance fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 7 - typical capacitance vs. collector-to-emitter voltage 0 2000 4000 6000 8000 1 10 100 ce c, capacitance (pf) v , collector-to-em itter volta g e ( v ) a v = 0v , f = 1m hz c = c + c , c sh orted c = c c = c + c c ie s c res c oes ge ies g e g c ce res gc o es c e g c 0 4 8 12 16 20 0 40 80 120 160 200 ge v , gate-to-emitter voltage (v) g q , total gate char g e ( nc ) a v = 400v i = 27a ce c 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 to ta l s w itch in g l os se s (m j) a t , junction temperature ( c ) j i = 5 4a i = 2 7a i = 1 4 a r = 5 .0 w v = 1 5v v = 4 80 v c c c g ge cc 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 102030405060 total switching losses (mj) a v = 480v v = 15v t = 25c i = 27a cc ge j c r g , gate resistance ( w )
IRG4BAC50U 6 www.irf.com fig. 12 - turn-off soa fig. 11 - typical switching losses vs. collector-to-emitter current 1 10 100 1000 1 10 100 1000 c ce ge v , collector-to-emitter voltage (v) i , c ollector-to-e m itter current (a ) safe operating area v = 20v t = 125c ge j 0.0 1.0 2.0 3.0 0 1020304050 c total switching losses (mj) i , collector-to-emitter current ( a ) a r = 5.0 w t = 150c v = 480v v = 15v g j cc ge 5.0 w
IRG4BAC50U www.irf.com 7 480v 4 x i c @ 25c d.u.t. 50v l v * c ? ? * driver same t y p e as d.u.t.; vc = 80% of vce ( max ) * note: due to the 50v p ow er su p p l y , p ulse width and inductor w ill increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v 0 - 480v r l = t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) ? ? ? fig. 14b - switching loss waveforms 50v d river* 1000v d.u.t. i c c v ? ? ? l fig. 14a - switching loss test circuit * driver same type as d.u.t., vc = 480v
IRG4BAC50U 8 www.irf.com world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 252-7105 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 data and specifications subject to change without notice. 1/2000 super-220? (to-273aa) package outline
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