2008. 9. 11 1/2 semiconductor technical data KDV175 silicon epitaxial pin type diode revision no : 4 vhf ?- uhf band rf attenuator applications. agc for am/fm tuner. features ? low capacitance : c t =0.25[pf] (typ.) ? low series resistance : r s =7[ ? ] (typ.). ? designed for low inter modulation. ? small package : usc. maximum rating (ta=25 ? ) usc dim millimeters a b c d e f g h j k 2.50 0.1 1.25 0.05 0.90 0.05 0.30+0.06/-0.04 1.70 0.05 min 0.17 0.126 0.03 0~0.1 0.15 0.05 0.4 0.05 2 +4/-2 l m 4~6 i 1.0 max cathode mark m m i c j g d 2 1 b 1. anode 2. cathode e k a f h l + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) characteristic symbol rating unit reverse voltage v r 50 v forward current i f 50 ma junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? characteristic symbol test condition min. typ. max. unit reverse voltage v r i r =10 a 50 - - v reverse current i r v r =50v - - 0.1 a forward voltage v f v f =50ma - 0.95 - v total capacitance c t v r =50v, f=1mhz - 0.25 - pf series resistance r s i f =10ma, f=100mhz - 7.0 - ? marking ue type name lot no.
2008. 9. 11 2/2 KDV175 revision no : 4 10 series resistance r ( ? ) 2 s 10 forward current i (a) f r - i c - v r reverse voltage v (v) 13 30 10 0.1 t total capacitance c (pf) t r 550 0.3 0.5 1 2 f=1mhz ta=25 c s f 100 1m 10m 5 30 50 100 300 500 1k 2k ta=25 c f=0.2ghz 0.4 0.6 0.8 1.0 1.0 0.8 0.6 0.4 f=0.2ghz 50m
|
