sup/sub45n05-20l vishay siliconix document number: 70948 s-21855?rev. b, 14-oct-02 www.vishay.com 2-1 n-channel 50-v (d-s), 175 c mosfet, logic level product summary v (br)dss (v) r ds(on) ( ) i d (a) 0.018 @ v gs = 10 v 50 0.020 @ v gs = 4.5 v 45 a d g s n-channel mosfet to-220ab top view gds drain connected to tab to-263 s d g top view SUP45N05-20L sub45n05-20l absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 50 gate-source voltage v gs 20 v t c = 25 c 45 a continuous drain current (t j = 175 c) t c = 125 c i d 32 pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 45 avalanche current i ar 45 repetitive avalanche energy b l = 0.1 mh e ar 100 mj t c = 25 c (to-220ab and to-263) 93 c maximum power dissipation t a = 25 c (to-263) c p d 3.75 w operating junction and storage temperature range t j , t stg -55 to 175 c thermal resistance ratings parameter symbol limit unit pcb mount (to-263) d 40 junction-to-ambient free air (to-220ab) r thja 8.0 c/w junction-to-case r thjc 1.6 c/w notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1? square pcb (fr-4 material).
sup/sub45n05-20l vishay siliconix www.vishay.com 2-2 document number: 70948 s-21855 ? rev. b, 14-oct-02 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 50 gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 2 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 50 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 50 v, v gs = 0 v, t j = 125 c 50 a dss v ds = 50 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 45 a v gs = 10 v, i d = 30 a 0.018 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 30 a, t j = 125 c 0.030 drain-source on-state resistance r ds(on) v gs = 4.5 v, i d = 45 a 0.020 forward transconductance a g fs v ds = 15 v, i d = 45 a 20 s dynamic b input capacitance c iss 1800 3600 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 370 pf reverse transfer capacitance c rss 130 total gate charge c q g 43 60 gate-source charge c q gs v ds = 25 v, v gs = 10 v, i d = 45 a 7 nc gate-drain charge c q gd ds gs d 10 turn-on delay time c t d(on) 10 20 rise time c t r v dd = 25 v, r l = 0.6 10 20 turn-off delay time c t d(off) v dd = 25 v, r l = 0.6 i d 45 a, v gen = 10 v, r g = 2.5 32 60 ns fall time c t f 7 15 source-drain diode ratings and characteristics (t c = 25 c) b pulsed current i sm 43 a forward voltage a v sd i f = 45 a, v gs = 0 v 1.5 v reverse recovery time t rr i f = 45 a, di/dt = 100 a/ s 49 100 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
sup/sub45n05-20l vishay siliconix document number: 70948 s-21855 ? rev. b, 14-oct-02 www.vishay.com 2-3 typical characteristics (25 c unless noted) 0 20 40 60 80 0 102030405060 0 500 1000 1500 2000 2500 3000 0 1020304050 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) - on-resistance ( q g - total gate charge (nc) i d - drain current (a) v ds - drain-to-source voltage (v) c - capacitance (pf) r ds(on) ) v gs - transconductance (s) g fs 0 20 40 60 80 100 0246810 0 2 4 6 8 10 0 1020304050 0.00 0.01 0.02 0.03 0.04 0204060 0 10 20 30 40 50 60 012345 25 c -55 c 5 v t c = -125 c v ds = 25 v i d = 43 a v gs = 10 thru 6 v v gs = 10 v v gs = 4.5 v c rss t c = -55 c 25 c 125 c 3 v 4 v c oss c iss i d - drain current (a)
sup/sub45n05-20l vishay siliconix www.vishay.com 2-4 document number: 70948 s-21855 ? rev. b, 14-oct-02 typical characteristics (25 c unless noted) on-resistance vs. junction t emperature source-drain diode forward voltage (normalized) - on-resistance ( t j - junction temperature ( c) v sd - source-to-drain voltage (v) r ds(on) ) - source current (a) i s 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 -50 -25 0 25 50 75 100 125 150 175 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 20 a t j = 25 c t j = 150 c 0 thermal ratings 0 15 30 45 60 0 25 50 75 100 125 150 175 safe operating area v ds - drain-to-source voltage (v) 300 10 0.1 1 10 100 limited by r ds(on) 0.1 100 maximum drain current vs. case t emperature t c - case temperature ( c) - drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 normalized effective transient thermal impedance 3 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 - drain current (a) i d 1 ms 10 ms 100 ms 10 s 100 s 1 t c = 25 c single pulse dc
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