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VS-70TPS12PBF, vs-70tps16pbf high voltage series www.vishay.com vishay semiconductors revision: 18-jun-13 1 document number: 94391 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high voltage phase control thyristor, 70 a features ? high surge capability ? high voltage input rectification ? designed and qualified according to jedec-jesd47 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? ac switches ? high voltage input rectification (soft start) ? high current crow-bar ? other phase-control circuits ? designed to be used with vishay input diodes, switches, and output rectifiers which are available in identical package outlines description the vs-70tps..pbf high voltage series of silicon controlled rectifiers are specif ically designed for high and medium power switching, and phase control applications. product summary package super to-247 diode variation single scr i t(av) 70 a v drm /v rrm 1200 v, 1600 v v tm 1.25 v i gt 100 ma t j - 40 c to 125 c (g) 3 2 (a) 1 (k) super to-247 major ratings and characteristics parameter test conditions values units i t(av) sinusoidal waveform 70 a i rms lead current limitation 75 v rrm /v drm range 1200/1600 v i tsm 1100 a v t 100 a, t j = 25 c 1.4 v dv/dt 500 v/s di/dt 150 a/s t j - 40 to 125 c voltage ratings part number v rrm /v drm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm /i drm at 125 c ma VS-70TPS12PBF 1200 1300 15 vs-70tps16pbf 1600 1700
VS-70TPS12PBF, vs-70tps16pbf high voltage series www.vishay.com vishay semiconductors revision: 18-jun-13 2 document number: 94391 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 absolute maximum ratings parameter symbol test conditions values units maximum average on-state current i t(av) t c = 82 c, 180 conduction half sine wave 70 a maximum continuous rms on-state current as ac switch i t(rms) lead current limitation 75 maximum peak, one-cycle non-repetitive surge current i tsm 10 ms sine pulse, rated v rrm applied initial t j = t j maximum 930 10 ms sine pulse, no voltage reapplied 1100 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 4325 a 2 s 10 ms sine pulse, no voltage reapplied 6115 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 61 150 a 2 ? s low level value of threshold voltage v t(to)1 t j = 125 c 0.916 v high level value of threshold voltage v t(to)2 1.21 low level value of on-state slope resistance r t1 4.138 m ? high level value of on-state slope resistance r t2 3.43 maximum peak on -state voltage v tm 100 a, t j = 25 c 1.4 v maximum rate of rise of turned-on current di/dt t j = 25 c 150 a/s maximum holding current i h anode supply = 6 v, resistive load, initial i t = 1 a, t j = 25 c 200 ma maximum latching current i l anode supply = 6 v, resistive load , t j = 25 c 400 maximum reverse and direct leakage current i rrm /i drm t j = 25 c v r = rated v rrm /v drm (t j = t j max., linear to 80 % v drm = r g -k = open) 1.0 t j = 125 c 15 maximum rate of rise of off-state voltage dv/dt t j = 125 c 500 v/s triggering parameter symbol test conditions values units maximum peak gate power p gm t = 30 s 10 w maximum average gate power p g(av) 2.5 maximum peak gate current i gm 2.5 a maximum peak negative gate voltage - v gm 10 v maximum required dc ga te voltage to trigger v gt t j = - 40 c anode supply = 6 v resistive load 1.8 t j = 25 c 1.5 t j = 125 c 1.1 maximum required dc ga te current to trigger i gt t j = - 40 c anode supply = 6 v resistive load 150 ma t j = 25 c 100 t j = 125 c 80 maximum dc gate volt age not to trigger v gd t j = 125 c, v drm = rated value 0.25 v maximum dc gate curr ent not to trigger i gd 6ma VS-70TPS12PBF, vs-70tps16pbf high voltage series www.vishay.com vishay semiconductors revision: 18-jun-13 3 document number: 94391 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at different conduction angles than dc fig. 1 - current rating characteristics fig. 2 - current rating characteristics thermal and mechanical specifications parameter symbol test conditions values units maximum junction temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to case r thjc dc operation 0.27 c/w maximum thermal resistance, junction to ambient r thja 40 typical thermal resistance, case to heatsink r thcs mounting surface, sm ooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style super to-247 70tps12 70tps16 ? r thj-hs conduction per junction device sine half wave conduction re ctangular wave conduction units 180 120 90 60 30 180 120 90 60 30 vs-70tps..pbf 0.078 0.092 0.117 0.172 0.302 0.053 0.092 0.125 0.180 0.306 c/w average on-state current (a) maximum allowable case temperature (c) 70 80 90 100 110 120 130 0 1020304050607080 30? 60? 90? 120? 180? conduction angle rthjc (dc) = 0.27 ?c/w average on-state current (a) maximum allowable case temperature (c) 60 70 80 90 100 110 120 130 0 102030405060708090 dc 30? 60? 90? 120? 180? conduction period rthjc (dc) = 0.27 ?c/w VS-70TPS12PBF, vs-70tps16pbf high voltage series www.vishay.com vishay semiconductors revision: 18-jun-13 4 document number: 94391 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - on-state powe r loss characteristics fig. 4 - on-state powe r loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current fig. 7 - on-state volt age drop characteristics average on-state current (a) maximum average on-state power loss (w) 0 20 40 60 80 100 120 140 0 10203040506070 rms limit conduction angle 180? 120? 90? 60? 30? tj = 125?c average on-state current (a) maximum average on-state power loss (w) 0 30 60 90 120 150 01530456075 rms limit conduction period tj = 125?c 180? 120? 90? 60? 30? dc peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 110100 400 600 700 800 900 1000 v s -70tp s .. s erie s at any rated load condition and with rated v rrm applied following s urge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 500 300 400 600 700 800 900 1000 1100 1200 0.01 0.1 1 10 peak half sine wave forward current (a) maximum non-repetitive s urge current ver s u s pul s e train duration. initial t j = 150 c no voltage reapplied rated v rrm reapplied pulse train duration (s) 500 instantaneous on-state voltage (v) instantaneous on-state current (a) 1 10 100 1000 0.511.522.533.5 tj = 25c tj = 125c VS-70TPS12PBF, vs-70tps16pbf high voltage series www.vishay.com vishay semiconductors revision: 18-jun-13 5 document number: 94391 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 8 - gate characteristics fig. 9 - thermal impedance z thjc characteristics in s tantaneou s g ate current (a) in s tantaneou s g ate voltage (v) 0.001 0.01 0.1 1 10 100 1000 0.1 1 10 100 t j = 25 c t j = - 40 c t j = 125 c rectangular gate pul s e a) recommended load line for rated di f /dt: 20 v, 30 t r = 0.5 s , t p > = 6 s b) recommended load line for < = 30 % rated di f /dt: 20 v, 65 t r = 1 s , t p > = 6 s (a) (b) (1) (2) (4) (3) fre q uency limited by p g (av) v g d i g d (1) p g m = 100 w, t p = 500 s (2) p g m = 50 w, t p = 1 m s (3) p g m = 20 w, t p = 25 m s (4) p g m = 10 w, t p = 5 m s square wave pulse duration (s) transient thermal impedance z thjc (c/w) 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 steady state value (dc operation) single pulse d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 70tps.. series VS-70TPS12PBF, vs-70tps16pbf high voltage series www.vishay.com vishay semiconductors revision: 18-jun-13 6 document number: 94391 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) prefered p/n quantity per t/r minimum order quantity packaging description VS-70TPS12PBF 25 500 antistatic plastic tube vs-70tps16pbf 25 500 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95073 part marking information www.vishay.com/doc?95070 2 - current rating (70 = 70 a) 1 - vishay semiconductors product 3 - circuit configuration: 4 - package: 5 t = thyristor - type of silicon: 6 - voltage code x 100 = v rrm p = super to-247 s = standard recovery rectifier 7 - pbf = lead (pb)-free 12 = 1200 v 16 = 1600 v device code 5 1 3 2 4 6 7 vs- 70 t p s 16 pbf document number: 95073 for technical questions concer ning discrete products, cont act: diodes-tech@vishay.com www.vishay.com revision: 10-dec-08 for technical qu estions concerning module products , contact: ind-modules@vishay.com 1 super to-247 outline dimensions vishay high power products dimensions in millimeters (inches) notes (1) dimension and tolerancing per asme y14.5m-1994 (2) controlling dimension: millimeter (3) outline conforms to jedec outline to-274aa 2.15 (0.0 8 4) 1.45 (0.05 8 ) 0.13 (0.005) 5.50 (0.216) 4.50 (0.17 8 ) 4 b 3 x 1.20 (0.047) 0.90 (0.035) 2.35 (0.092) 1.65 (0.065) a 16.10 (0.632) 15.10 (0.595) 2 x r 20. 8 0 (0. 8 1 8 ) 19. 8 0 (0.7 8 0) c 14. 8 0 (0.5 8 2) 13. 8 0 (0.544) 5.45 (0.215) 2 x 4.25 (0.167) 3. 8 5 (0.152) 3 x 0.25 (0.010) b a m m 0.25 (0.010) b a mm 13.90 (0.547) 13.30 (0.524) 1.30 (0.051) 0.70 (0.02 8 ) 16.10 (0.633) 15.50 (0.611) 4 ee ? 1.60 (0.063) max. section e - e lead assignments mosfet 1 - gate 2 - drain 3 - so u rce 4 - drain igbt 1 - gate 2 - collector 3 - emitter 4 - collector 3 2 1 legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. |
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