1 cmpa5585025f 25 w, 5.5 - 8.5 ghz, gan mmic, power amplifer crees cmpa5585025f is a gallium nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths compared to si and gaas transistors. this mmic is available in a 10 lead metal/ceramic fanged package for optimal electrical and thermal performance. r e v 0 . 1 C m a y 2 0 1 1 typical performance over 5.8-8.4 ghz (t c = 25?c) parameter 5.8 ghz 6.4 ghz 7.2 ghz 7.9 ghz 8.4 ghz units small signal gain 29.5 24.0 24.0 24.0 22.0 db output power 1 15 23 20 19 19 w power gain 1 22.5 20.0 18.5 17.5 20.0 db power added effciency 1 30 35 30 25 30 % note 1 : measured in the cmpa5585025f-tb under oqpsk modulation, 1.6 msps, pn23, alpha filter = 0.2. features ? 25 db small signal gain ? 35 w typical p sat ? operation up to 28 v ? high breakdown voltage ? high temperature operation ? size 0.142 x 0.188 x 0.004 inches applications ? point to point radio ? communications ? satellite communication uplink pn: cmpa5585025f package type: 440208 subject to change without notice. www.cree.com/wireless
2 cmpa5585025f rev 0.1, preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association. absolute maximum ratings (not simultaneous) at 25?c parameter symbol rating units drain-source voltage v dss 84 v dc gate-source voltage v gs -10, +2 v dc power dissipation p diss 55 w storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 10 ma soldering temperature 1 t s 245 ?c screw torque 40 in-oz thermal resistance, junction to case r jc 3.0 ?c/w case operating temperature 2 t c -40, +60 ?c note: 1 refer to the application note on soldering at www.cree.com/products/wireless_appnotes.asp 2 measured for the cmpa5585025f at p diss = 55 w electrical characteristics (frequency = 5.5 ghz to 8.5 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold v th -3.8 -2.8 -2.3 v v ds = 10 v, i d = 13.2 ma saturated drain current 2 i ds 10.6 12.8 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v bd 84 100 C v v gs = -8 v, i d = 13.2 ma rf characteristics 3 small signal gain s21 C 24 C db v dd = 28 v, i dq = 285 ma output power 4,5,6 p out C 20 C w v dd = 28 v, i dq = 285 ma, power added effciency 4,5,6 pae C 30 C % v dd = 28 v, i dq = 285 ma power gain 4,5,6 g p C 19 C db v dd = 28 v, i dq = 285 ma input return loss s11 C 10 C db v dd = 28 v, i dq = 285 ma output return loss s22 C 6 C db v dd = 28 v, i dq = 285 ma output mismatch stress vswr C 5:1 C y no damage at all phase angles, v dd = 28 v, i dq = 285 ma, p out = 25w oqpsk notes: 1 measured on-wafer prior to packaging. 2 scaled from pcm data. 3 measured in the cmpa5585025f-tb. 4 under oqpsk modulated signal, 1.6 msps, pn23, alpha filter = 0.2. 5 fixture loss de-embedded. 6 measured at -30 dbc, 1.6 mhz from carrier.
3 cmpa5585025f rev 0.1, preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association. typical performance of the cmpa5585025f figure 1. cmpa5585025f linear output power, gain and pae at -30 dbc, 1.6 mhz from carrier v dd = 28 v, i dq = 285 ma, 1.6 msps oqpsk modulation 0 5 10 15 20 25 30 35 40 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5 7.7 7.9 8.1 8.3 8.5 ou t p u t po w er ( w ) , gai n ( d b ) , & p a e ( % ) frequency (ghz) cmpa5585025f output power, gain and pae at -30 dbc - 1.6 mhz from carrier vdd = 28 v, idq = 285 ma, 1.6 msps oqpsk modulation output power gain pae c band extended c band x band
4 cmpa5585025f rev 0.1, preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association. typical performance figure 2. typical small signal gain and return loss vs frequency of the cmpa5585025f measured in cmpa5585025f-tb amplifer circuit. v ds = 28 v, i ds = 285 ma electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm ii (200 < 500 v) jedec jesd22 c101-c -40 -30 -20 -10 0 10 20 30 40 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 s m a l l s i g n a l g a i n , i n p u t a n d o u t p u t r e t u r n l o s s ( d b ) frequency (ghz) typical small signal gain and return loss vs frequency of the cmpa5585025f measured in cmpa5585025f-tb amplifier circuit. vds = 28 v, ids = 285 ma |s21| (db) |s11| (db) |s22| (db)
5 cmpa5585025f rev 0.1, preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association. cmpa5585025f-tb demonstration amplifer circuit cmpa5585025f-tb demonstration amplifer circuit outline
6 cmpa5585025f rev 0.1, preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association. cmpa5585025f-tb demonstration amplifer circuit bill of materials designator description qty c1, c3, c7, c8, c10, c13 cap, 1.0 uf, +/-10%, 1210, 100v, x7r 6 c2, c4, c5, c6, c9, c12 cap, 33000 pf, 0805, 100v, x7r 6 c11, c14 cap elect 3.3uf 80v fk smd 2 r1, r2 res 0.0 ohm 1/16w 0402 smd 2 j1,j2 conn, sma, panel mount jack, flange, 4-hole, blunt post, 20mil 2 j3 connector, header, rt>plz .1cen lk 9pos 1 - pcb, taconic, rf-35-0200-ch/ch 1 q1 cmpa5585025f 1 cmpa5585025f-tb demonstration amplifer circuit
7 cmpa5585025f rev 0.1, preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association. product dimensions cmpa5585025f (package type 440208) pin number qty 1 gate bias for stage 2 2 gate bias for stage 2 3 rf in 4 gate bias for stage 1 5 gate bias for stage 1 6 drain bias 7 drain bias 8 rf out 9 drain bias 10 drain bias 11 source
8 cmpa5585025f rev 0.1, preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association. part number system parameter value units lower frequency 5.5 ghz upper frequency 1 8.5 ghz power output 25 w package flange - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package power output (w) upper frequency (ghz) lower frequency (ghz) cree mmic power amplifer product line cmpa5585025f
9 cmpa5585025f rev 0.1, preliminary cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/wireless copyright ? 2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association. disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/wireless ryan baker marketing cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639
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