parameter description min typ. max test conditions v (br)dss drain-to-source breakdown voltage 75v CCC CCC v gs = 0v, i d = 250a r ds(on)*** static drain-to-source on-resistance CCC 2.5m w 4.5m w v gs = 10v, i d = 110a v gs(th) gate threshold voltage 2.0 CCC 4.0v v ds = v gs , i d = 250a i dss drain-to-source leakage current CCC CCC 20a v ds = 75v, v gs = 0v, t j = 25c i gss gate-to-source leakage current CCC CCC 200na v gs = 20v t j operating junction and -55c to 175c max. t stg storage temperature range nominal back metal composition, thickness: cr-niv-ag ( 1ka-2ka-5ka ) nominal front metal composition, thickness: 100% al (0.008 mm) dimensions: .257" x .360" [ 6.53 mm x 9.14 mm ] wafer diameter: 150 mm, with 100 flat wafer thickness: 0.254 mm 0.025 mm relevant die mechanical drawing number 01-5403 minimum street width 0.107 mm reject ink dot size 0.51 mm diameter minimum recommended storage environment: store in original container, in dessicated nitrogen, with no contamination recommended die attach conditions: for optimum electrical results, die attach temperature should not exceed 300 c reference packaged part irfp2907 75v r ds(on) = 2.5m w ( typ.) *** 6" wafer 10/4/00 mechanical data die outline electrical characteristics * irfc2907b hexfet ? power mosfet die in wafer form s d g www.irf.com 1 gat e source source 6.53 [.257] 9.14 [.360] 0.508 [.020] 0.508 [.020] 5. unless otherwise noted all die are gen iii < 1.270 t olerance = + /- 0.102 < [.050] t olerance = + /- [.004] > 1.270 t olerance = + /- 0.203 > [.050] t olerance = + /- [.008] length overall die: wi dt h & not es : 2. cont rolling dimens ion: [inch]. 3. letter designation: 4. dime ns ional t ol e r ance s : 1. all dimens ions are s hown in millimet ers [inches ]. < 0.635 tolerance = +/- 0.013 < [.0250] t olerance = + /- [.0005] > 0.635 tolerance = +/- 0.025 > [.0250] t olerance = + /- [.0010] is = currentsense sk = source kelvin bonding pads: wi dt h length & s = source g = gat e e = emitter * electrical characteristics are reported for the reference packaged part (see above) and can not be guaranteed in die sales form. variations in customer packaging materials, dimensions and processes may affect parametric performance. ** contact factory for these product forms. ***the typical r ds(on) is an estimated value for the bare die, actual results will depend on customer packaging materials and dimensions. l 100% tested at probe l available in tape and reel, chip pack, sawn on film and gel pack** l ultra low on-resistance pd - 93777
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