microsemi reserves the right to change, without notice, th e specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. JTDB25 25 watts, 36 volts, pulsed avionics, 960-1215 mhz general description the JTDB25 is a high power common base bipolar transistor. it is designed for pulsed systems in the frequency band 960-1215 mhz. the device has gold thin-film metallization and diffused ballasting for proven highest mttf. the transistor includes input and output prematch for broadband capability. low thermal resistance package reduces junction temperature, extends life. absolute maximum ratings maximum power dissipation @ 25oc 1 97w maximum voltage and current bv ces 55v bv ebo 3.5v i c 5.0a maximum temperatures storage temperature -65 to +200oc operating junction temperature +200oc case outline 55aw-1 electrical characteristics @ 25 c symbol characteristics test conditions min typ max units bv ebo emitter ? base breakdown i e = 5 ma 3.5 v bv ces collector ? emitter breakdown i c = 10 ma 55 v h fe dc ? current gain i c = 500ma, v ce = 5v 20 jc 1 thermal resistance 1.8 oc/w functional characteristics @ 25 c pout power output f=960-1215 mhz 25 w pin power input vcc = 36v 5 w gain power gain pulse width = 10s 7.0 7.5 rl return loss df=40% 8 db vswr 2 load mismatch tolerance f = 1090 mhz 5:1 notes: 1. at rated pulse conditions 2. at rated output power rev a: dec 2009
microsemi reserves the right to change, without notice, th e specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct.
microsemi reserves the right to change, without notice, th e specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct.
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