(2/5 00 ???`? ? ??? dimension:mm ????g?R ollector-mitter oltage ` ? g R ate-mitter oltage ollector urrent p ? ollector ower issipation unction emperature ange torage emperature ange ~ F R(erminal to ase ,inute) solation oltage , odule ase to eatsink . ? . . ounting orque usbar to erminals ? . ? (kgf?cm) . . . ollector-mitter ut-ff urrent = 1200v, = 0v ?w. ` ? ate-mitter eakage urrent = 20v, = 0v .? ????g??R ollector-mitter aturation oltage = 800a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 800ma . . nput apacitance = 10v, = 0v,= 1mh 50,400 N r g ise ime . . `??rg urn-on ime . . r g all ime . . ???rg witching ime `???rg urn-off ime = 600v l = 0.75 g = 2.0 = 15v . . ? ?`?`??`? orward urrent . . . R eak orward oltage = 800a, = 0v . . r g everse ecovery ime = 800a, = -10v i/t= 1600a/s . . ? . . . . hermal mpedance iode th(j-c) junction to case (c) 12 (e) 4 (e) 3 (g) 2 -m4 4 - ?6.5 80 2 - m 8 110 93 0.25 62 0.25 20 20 13 21 29 4 2 1 3 +1.0 - 0.5 36 25.5 +1.0 - 0 .5 23 7 label
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3$ 99?99?9?999?9?9y9t 012345 0 200 400 600 800 1000 1200 1400 1600 collector to emitter voltage v ce (v) collector current i c (a) fig.1 - output characteristics (typical) t c =25c 11v 10v v ge =20v 8v 7v 12v 15v 9v 012345 0 200 400 600 800 1000 1200 1400 1600 collector to emitter voltage v ce (v) collector current i c (a) fig.2 - output characteristics (typical) t c =125c 11v 10v v ge =20v 8v 7v 12v 15v 9v 048121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.3 - collector to emitter on voltage vs. gate to emitter voltage (typical) t c =25c i c =400a 1600a 800a 048121620 fig.4 - collector to emitter on voltage vs. gate to emitter voltage (typical) i c =400a 1600a t c =125c 800a 0 1000 2000 3000 4000 5000 6000 0 100 200 300 400 500 600 700 800 total gate charge qg (nc) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) fig.5 - gate charge vs. collector to emitter voltage (typical) 0 2 4 6 8 10 12 14 16 v ce =600v 400v 200v r l =0.75 ( t c =25c 0.1 0.2 0.5 1 2 5 10 20 50 100 200 100 300 1000 3000 10000 30000 100000 300000 collector to emitter voltage v ce (v) capacitance c (pf) fig.6 - capacitance vs. collector to emitter voltage (typical) cies coes cres v ge =0v f=1mh z t c =25c
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3$ 99?99?9?999?9?9y9t 0 200 400 600 800 0 0.4 0.8 1.2 1.6 2 collector current i c (a) switching time t (s) fig.7 - collector current vs. switching time (typical) t off t f t r(v ce ) t on v cc =600v r g =2.0 ( v ge =15v t c =25c resistive load 1 3 10 30 0.03 0.1 0.3 1 3 5 series gate impedance r g ( ( ) switching time t (s) fig.8 - series gate impedance vs. switching time (typical) v cc =600v i c =800a v ge =15v t c =25c resistive load tf tr (v ce ) ton toff 0 200 400 600 800 1000 0.01 0.03 0.1 0.3 1 3 10 collector current i c (a) switching time t (s) fig.9 - collector current vs. switching time t off t f t r(ic) t on v cc =600v r g =2.0 ( v ge =15v t c =125c inductive load 1 3 10 30 0.02 0.05 0.1 0.2 0.5 1 2 5 10 series gate impedance r g ( ( ) switching time t (s) fig.10 - series gate impedance vs. switching time v cc =600v i c =800a v ge =15v t c =125c inductive load tf tr (i c ) ton toff 0 200 400 600 800 1000 1200 0 50 100 150 200 250 collector current i c (a) switching loss e sw (mj/pulse) fig.11 - collector current vs. switching loss e off e on v cc =600v r g =2.0 ( v ge =15v t c =125c inductive load e rr 1 3 10 30 10 30 100 300 1000 3000 series gate impedance r g ( ( ) switching loss e sw (mj/pulse) fig.12 - series gate impedance vs. switching loss e off e on v cc =600v i c =800a v ge =15v t c =125c inductive load e rr
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3$ 99?99?9?999?9?9y9t 01234 0 200 400 600 800 1000 1200 1400 1600 forward voltage v f (v) forward current i f (a) fig.13 - forward characteristics of free wheeling diode (typical) t c =25c t c =125c 0 800 1600 2400 3200 4000 4800 5600 30 100 300 1000 fig.14 - reverse recovery characteristics (typical) i rrm trr i f =800a t c =25c t c =125c 10 -5 10 -4 10 -3 10 -2 10 -1 110 1 1x10 -4 3x10 -4 1x10 -3 3x10 -3 1x10 -2 3x10 -2 1x10 -1 3x10 -1 time t (s) transient thermal impedance rth (j-c) (c/w) fig.16 - transient thermal impedance t c =25c 1 shot pulse frd igbt 0 200 400 600 800 1000 1200 1400 0.1 0.3 1 3 10 30 100 300 1000 3000 5000 collector to emitter voltage v ce (v) collector current i c (a) fig.15 - reverse bias safe operating area r g =2.0 ( , v ge =15v, t c =125c
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