CPH6615 no.8069-1/6 features ? the CPH6615 incorporates a n-channel mosfet and a p-channel mosfet that feature low on-resistance, ultrahigh-speed switching, thereby enabling high-density mounting. ? excellent on-resistance characteristic. ? best suited for load switches. ? 4v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions n-channel p-channel unit drain-to-source voltage v dss 30 --30 v gate-to-source voltage v gss 20 20 v drain current (dc) i d 2.5 --1.8 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 10 --7.2 a allowable power dissipation p d mounted on a ceramic board (900mm 2 5 0.8mm)1unit 0.9 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance ? yfs ? v ds =10v, i d =1.5a 1.2 2.0 s r ds (on)1 i d =1.5a, v gs =10v 79 105 m w static drain-to-source on-state resistance r ds (on)2 i d =1a, v gs =4v 150 210 m w input capacitance ciss v ds =10v, f=1mhz 187 pf output capacitance coss v ds =10v, f=1mhz 40 pf reverse transfer capacitance crss v ds =10v, f=1mhz 33 pf marking : wb continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn8069 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. d1004pe ts tb-00000653 CPH6615 n-channel and p-channel silicon mosfets general-purpose switching device applications
CPH6615 no.8069-2/6 continued from preceding page. ratings parameter symbol conditions min typ max unit turn-on delay time t d (on) see specified test circuit. 7.8 ns rise time t r see specified test circuit. 18.5 ns turn-off delay time t d (off) see specified test circuit. 22 ns fall time t f see specified test circuit. 12 ns total gate charge qg v ds =10v, v gs =10v, i d =2.5a 5.2 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =2.5a 1 nc gate-to-drain miller charge qgd v ds =10v, v gs =10v, i d =2.5a 0.97 nc diode forward voltage v sd i s =2.5a, v gs =0 0.9 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0 --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance ? yfs ? v ds =--10v, i d =--1a 1.1 1.8 s r ds (on)1 i d =--1a, v gs =--10v 180 235 m w static drain-to-source on-state resistance r ds (on)2 i d =--0.5a, v gs =--4v 320 450 m w input capacitance ciss v ds =--10v, f=1mhz 226 pf output capacitance coss v ds =--10v, f=1mhz 43 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 36 pf turn-on delay time t d (on) see specified test circuit. 8.5 ns rise time t r see specified test circuit. 10.5 ns turn-off delay time t d (off) see specified test circuit. 29 ns fall time t f see specified test circuit. 22 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--1.8a 5.5 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--1.8a 1 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--10v, i d =--1.8a 0.97 nc diode forward voltage v sd i s =--1.8a, v gs =0 --0.91 --1.5 v package dimensions electrical connection unit : mm 2238 1 : gate1 2 : source2 3 : gate2 4 : drain2 5 : source1 6 : drain1 sanyo : cph6 0.05 0.9 0.7 0.2 1.6 0.6 0.6 0.95 1 23 6 5 4 2.8 0.2 2.9 0.15 0.4 654 123 1 : gate1 2 : source2 3 : gate2 4 : drain2 5 : source1 6 : drain1 top view
CPH6615 no.8069-3/6 switching time test circuit [n-channel] [p-channel] pw=10 m s d.c. 1% p. g 50 w g s d i d =1.5a r l =10 w v dd =15v v out v in 10v 0v v in pw=10 m s d.c. 1% p. g 50 w g s d i d = --1a r l =15 w v dd = --15v v out v in 0v --10v v in [nch] [nch] i d -- v ds it07298 i d -- v gs it07300 0 0 0 2.5 0.8 0.9 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.5 1.0 1.5 2.0 0 3.0 0.5 1.0 2.0 2.5 1.5 v gs =2.5v 4.0v 6.0v 10.0v 3.0v v ds =10v 75 c ta=25 c --25 c [pch] [pch] i d -- v ds it07299 i d -- v gs it07301 0 0 0 --1.8 --1.4 --1.2 --1.6 --0.8 --0.9 --1.0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.2 --0.4 --0.6 --1.0 --0.8 v gs = -- 2.5v -- 4.0v -- 10.0v -- 3.0v v ds = -- 10v -- 6.0v --4.0 --3.0 --2.5 --3.5 --0.5 0 --3.0 --1.0 --1.5 --2.0 4.0 3.0 2.5 3.5 0.5 1.0 1.5 2.0 --0.5 --1.0 --2.0 --2.5 --1.5 75 c ta=25 c --25 c drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v
CPH6615 no.8069-4/6 [nch] [nch] r ds (on) -- v gs it07302 r ds (on) -- ta it07304 0 0 400 24 8 6 10121416 20 18 --60 --40 --20 0 20 40 60 80 100 120 140 160 350 150 200 250 300 100 50 0 300 100 150 250 50 200 ta=25 c i d =1.0a 1.5a [pch] r ds (on) -- v gs it07303 0 0 800 -- 2 -- 4 -- 8 --6 --10 --12 --14 --16 --20 --18 700 200 100 300 400 500 600 ta=25 c i d = --0.5a --1.0 a i d = 1.0 a, v gs =4v i d = 1.5 a, v gs =10v [pch] r ds (on) -- ta it07305 --60 --40 --20 0 20 40 60 80 100 120 140 160 0 600 100 200 300 400 500 i d = -- 0.5 a, v gs = --4v i d = -- 1.0 a, v gs = --10v it07308 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.1 0.01 0.1 1.0 7 5 3 2 7 5 3 2 5 3 2 i f -- v sd it07306 ? y fs ? -- i d 0.1 0.01 57 23 57 23 1.0 23 7 5 1.0 7 5 7 2 3 5 2 3 0.1 1.0 7 5 7 2 3 5 2 3 0.1 ta=75 c 25 c --25 c v gs =0 [nch] [nch] it07309 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.2 --1.1 --0.01 --0.1 --1.0 7 5 3 2 7 5 3 2 5 3 2 i f -- v sd ta=75 c 25 c --25 c v gs =0 [pch] v ds =10v it07307 ? y fs ? -- i d --0.1 --0.01 57 23 --1.0 27 5 3 ta= --25 c 75 c 25 c [pch] v ds = --10v 75 c 25 c ta= --25 c 57 23 static drain-to-source on-state resistance, r ds (on) -- m w forward transfer admittance, ? y fs ? -- s static drain-to-source on-state resistance, r ds (on) -- m w gate-to-source voltage, v gs -- v ambient temperature, ta -- c static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w gate-to-source voltage, v gs -- v ambient temperature, ta -- c drain current, i d -- a forward current, i f -- a diode forward voltage, v sd -- v forward transfer admittance, ? y fs ? -- s drain current, i d -- a forward current, i f -- a diode forward voltage, v sd -- v
CPH6615 no.8069-5/6 sw time -- i d it07310 100 10 1.0 3 2 5 7 3 2 5 7 3 2 0.01 0.1 23 57 23 57 23 5 1.0 7 0 10 100 5 3 7 5 3 2 2 10 100 5 3 7 5 3 2 2 30 5 10152025 ciss, coss, crss -- v ds it07312 f=1mhz v dd =15v v gs =10v t d (off) t d (on) ciss coss crss [nch] [nch] t r t f sw time -- i d it07311 100 10 1.0 2 3 5 7 3 2 5 5 7 3 2 --0.01 --0.1 2 3 57 2 3 57 2 --1.0 5 3 v dd = --15v v gs = --10v t d (off) t d (on) [pch] t f t r 0 --30 --5 --10 --15 --20 --25 ciss, coss, crss -- v ds it07313 f=1mhz ciss coss crss [pch] a s o 1.0 2 2 3 5 7 2 3 5 7 3 2 5 7 10 0.1 0.01 23 5 5 3 7 23 57 23 57 0.01 0.1 1.0 10 2 it07316 v gs -- qg it07314 0 0 1 2 3 5 4 6 7 8 9 6 10 12345 0 6 12345 <10 m s 100 m s 1ms 10ms 100ms operation in this area is limited by r ds (on). i d =2.5a dc operation (ta=25 c) i dp =10a [nch] [nch] v ds =10v i d =2.5a a s o --1.0 2 3 5 7 2 3 5 7 2 3 5 7 2 --10 --0.1 --0.01 23 5 5 3 7 23 57 23 57 --0.01 --0.1 --1.0 --10 2 it07317 v gs -- qg it07315 0 -- 1 -- 2 -- 3 -- 5 -- 4 -- 6 -- 7 -- 8 -- 9 --10 <10 m s 100 m s 1ms 10ms 100ms operation in this area is limited by r ds (on). i d = --1.8a dc operation (ta=25 c) i dp = --7.2a [pch] [pch] v ds = --10v i d = --1.8a drain-to-source voltage, v ds -- v drain current, i d -- a total gate charge, qg -- nc gate-to-source voltage, v gs -- v ta=25 c single pulse mounted on a ceramic board (900mm 2 5 0.8mm) 1unit switching time, sw time -- ns ciss, coss, crss -- pf drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a total gate charge, qg -- nc gate-to-source voltage, v gs -- v switching time, sw time -- ns ciss, coss, crss -- pf drain current, i d -- a drain-to-source voltage, v ds -- v ta=25 c single pulse mounted on a ceramic board (900mm 2 5 0.8mm) 1unit drain-to-source voltage, v ds -- v
CPH6615 no.8069-6/6 ps specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of december, 2004. specifications and information herein are subject to change without notice. p d -- ta it07318 0 0 20 40 60 80 100 120 0.8 0.9 1.0 140 160 0.6 0.4 0.2 [nch / pch] ambient temperature, ta -- c allowable power dissipation, p d -- w mounted on a ceramic board (900mm 2 5 0.8mm) 1unit note on usage : since the CPH6615 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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